Method of thermal processing structures formed on a substrate

Patent metadata

Field	Value
Publication number	US-10840100-B2
Application number	US-201816200538-A
Country	US
Kind code	B2
Filing date	Nov 26, 2018
Priority date	Mar 8, 2006
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

The present invention generally describes one ore more methods that are used to perform an annealing process on desired regions of a substrate. In one embodiment, an amount of energy is delivered to the surface of the substrate to preferentially melt certain desired regions of the substrate to remove unwanted damage created from prior processing steps (e.g., crystal damage from implant processes), more evenly distribute dopants in various regions of the substrate, and/or activate various regions of the substrate. The preferential melting processes will allow more uniform distribution of the dopants in the melted region, due to the increased diffusion rate and solubility of the dopant atoms in the molten region of the substrate. The creation of a melted region thus allows: 1) the dopant atoms to redistribute more uniformly, 2) defects created in prior processing steps to be removed, and 3) regions that have hyper-abrupt dopant concentrations to be formed.

First claim

We claim:

1. A method of thermally processing a substrate, comprising:
positioning the substrate in a chamber and on a substrate support comprising a heating element and increasing a temperature of the substrate;
delivering a first energy from a first energy source to the substrate positioned on the substrate support in the chamber; and
delivering a second energy from a second energy source to the substrate positioned on the substrate support in the chamber, wherein the first energy or the second energy is annealing energy and the annealing energy is polarized laser energy.

2. The method of claim 1 , wherein the first energy source is a laser adapted to deliver radiation at a wavelength between 500 nanometers and 11 micrometers, and the second energy source is a laser adapted to deliver radiation at a wavelength between 500 nanometers and 11 micrometers.

3. The method of claim 2 , wherein the increasing the temperature of the substrate comprises preheating the substrate to a temperature between 20 degrees Celsius and 750 degrees Celsius, the first energy elevates a temperature of a substrate surface to a first temperature, and the second energy brings the temperature of the substrate surface to a second temperature that completes the thermal processing, and the annealing energy is delivered to the substrate for one second or less.

4. The method of claim 1 , wherein the second energy source comprises a series of lasers.

5. The method of claim 1 , wherein an amount of the second energy is less than an amount of the first energy.

6. The method of claim 1 , wherein the first energy and the second energy are delivered to a first region of the substrate, the first region having an area less than a surface of the substrate.

7. The method of claim 1 , wherein the first energy comprises a pulse of energy from the first energy source having a first shape of energy delivered versus time, and the second energy comprises a pulse of energy from the second energy source having a second shape of energy delivered versus time, wherein the second shape is different than the first shape.

8. The method of claim 1 , wherein the first energy and the second energy are delivered to a portion of a surface of the substrate, the first energy and the second energy individually do not cause the portion of the surface of the substrate receiving the first energy and the second energy to melt, and the first energy and the second energy combined cause the portion of the surface of the substrate to melt to a depth less than 0.5 micrometers.

9. A method of thermally processing a substrate, comprising:
positioning the substrate in a chamber and on a substrate support comprising a heating element and increasing a temperature of the substrate;
delivering a pulse of first energy from a first energy source to the substrate positioned on the substrate support in the chamber; and
delivering a pulse of second energy from a second energy source to the substrate positioned on the substrate support in the chamber, wherein the first energy or the second energy is annealing energy and the annealing energy is polarized laser energy.

10. The method of claim 9 , wherein the first energy and the second energy are delivered to a portion of a surface of the substrate, and the first energy and the second energy individually do not cause the portion of the surface of the substrate receiving the first energy and the second energy to melt.

11. The method of claim 10 , wherein the first energy and the second energy combined cause the portion of the surface of the substrate to melt to a depth less than 0.5 micrometers.

12. The method of claim 10 , wherein a shape of the pulse of the first energy delivered is varied as a function of time.

13. The method of claim 12 , where a shape of the pulse of the second energy delivered is varied as a function of time.

14. The method of claim 13 , wherein the first energy source and the second energy source are lasers adapted to deliver radiation at a wavelength between 500 nanometers and 11 micrometers.

15. The method of claim 9 , wherein only the second energy is polarized.

16. A method of thermally processing a substrate, comprising:
delivering a pulse of first energy from a first energy source to a portion of a surface of the substrate, the pulse of first energy having a first shape; and
delivering a pulse of second energy from a second energy source to the portion of the surface of the substrate, the pulse of second energy having a second shape that is different than the first shape, wherein at least one of the first energy and the second energy are polarized laser energy, wherein the first energy and the second energy individually do not cause the portion of the surface of the substrate receiving the first energy and the second energy to melt, and the first enerqy and the second energy combined cause the portion of the surface of the substrate to melt.

17. The method of claim 16 , wherein the portion of the surface of the substrate melts to a depth less than 0.5 micrometers.

18. The method of claim 17 , wherein both the first energy and the second energy are polarized laser energy.

19. The method of claim 16 , wherein:
the first shape of the pulse of first energy is of energy delivered versus time;
the second shape of the pulse of second energy is of energy delivered versus time;
the first shape comprises one of a rectangular modulation, a triangular modulation, or a sinusoidal modulation; and
the second shape comprises another of the rectangular modulation, the triangular modulation, or the sinusoidal modulation.

20. The method of claim 16 , wherein the pulse of first energy and the pulse of second energy each comprise the same total energy output.

Assignees

• Applied Materials Inc

Inventors

• Carey Paul
• Hunter Aaron Muir
• Jennings Dean
• Mayur Abhilash J
• Moffatt Stephen
• Schaffer William
• Thomas Timothy N
• Yam Mark

Classifications

• H10P72/0436

  mainly by radiation · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10P30/208

  of electrically inactive species · CPC title