Plasma enhanced CVD with periodic high voltage bias

Patent metadata

Field	Value
Publication number	US-10840086-B2
Application number	US-201815965621-A
Country	US
Kind code	B2
Filing date	Apr 27, 2018
Priority date	Apr 27, 2018
Publication date	Nov 17, 2020
Grant date	Nov 17, 2020

Abstract

Embodiments include a method of processing a substrate. In an embodiment, the method comprises flowing one or more source gasses into a processing chamber, and inducing a plasma from the source gases with a plasma source that is operated in a first mode. In an embodiment, the method may further comprise biasing the substrate with a DC power source that is operated in a second mode. In an embodiment, the method may further comprise depositing a film on the substrate.

First claim

What is claimed is:

1. A method of processing a substrate, comprising:
flowing one or more source gasses into a processing chamber;
inducing a plasma from the source gases with a plasma source that is operated in a first mode;
biasing the substrate with a DC power source that is operated in a second mode; and
depositing a film on the substrate, wherein a temperature of the substrate is less than 200° C.

2. The method of claim 1 , wherein the second mode is a continuously on mode.

3. The method of claim 1 , wherein the first mode comprises a first frequency and a first duty cycle, and wherein the second mode is a pulsed mode that comprises a second frequency and a second duty cycle.

4. The method of claim 3 , wherein the first frequency is equal to the second frequency.

5. The method of claim 4 , wherein the first duty cycle is equal to the second duty cycle.

6. The method of claim 4 , wherein the first duty cycle is different than the second duty cycle.

7. The method of claim 3 , wherein the first frequency is different than the second frequency.

8. The method of claim 7 , wherein the first duty cycle is the same as the second duty cycle.

9. The method of claim 7 , wherein the first duty cycle is different than the second duty cycle.

10. The method of claim 3 , wherein the second duty cycle is between 1% and 99%.

11. The method of claim 1 , wherein the second mode comprises a first voltage and a second voltage.

12. The method of claim 11 , wherein the first voltage and the second voltage are alternated.

13. The method of claim 11 , wherein the first voltage is applied for a first period of time, and wherein the second voltage is applied for a second period of time after the first voltage.

14. A method of processing a substrate, comprising:
flowing one or more source gasses into a processing chamber;
inducing a plasma from the source gases with a plasma source;
biasing the substrate with a pulsed DC power source, wherein the pulsed DC power source provides pulses of at least a first voltage and a second voltage; and
depositing a film on the substrate.

15. The method of claim 14 , wherein the one or more source gases comprises one or more of acetylene, methane, propylene, ethylene, cyclopropane, ethane, propane, and any other C x H y gas, and wherein a carbon film is deposited on the substrate.

16. The method of claim 14 , wherein the one or more source gases comprises one or more of silane, disilane, trisilane, tetrasilane, tetraethyl orthosilicate (TEOS), N 2 O, O 2 , and H 2 , and one or more inert gases, and wherein a silicon film or a silicon oxide film is deposited on the substrate.

17. The method of claim 14 , wherein the one or more source gasses comprises one or more of silane, NH 3 , N 2 , and H 2 , and one or more inert gases, and wherein a silicon nitride film is deposited on the substrate.

Assignees

• Applied Materials Inc

Inventors

• Chan Kelvin
• Koh Travis
• Huang Simon
• Kraus Philip Allan

Classifications

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title

• H10P14/6902

  composed of carbon, e.g. alpha-C, diamond or hydrogen doped carbon · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• C23C16/515 Primary

  using pulsed discharges · CPC title

• C23C16/401

  containing silicon · CPC title