Spin current magnetization rotational element, magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US-2019074123-A1 · Mar 7, 2019 · US
Spin current magnetization rotational element, magnetoresistance effect element, magnetic memory, and high-frequency magnetic element
US10840002B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10840002-B2 |
| Application number | US-201816101949-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 13, 2018 |
| Priority date | Sep 5, 2017 |
| Publication date | Nov 17, 2020 |
| Grant date | Nov 17, 2020 |
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- Title
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Abstract
Official abstract text for this publication.
Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer, the first perpendicular magnetic field applying layer being configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A spin current magnetization rotational element comprising: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction, perpendicular to the first direction and intersecting the spin-orbit torque wiring, and is configured to have a magnetization direction which is changeable; a first perpendicular magnetic held applying layer that is disposed to be separated from the spin-orbit torque wiring and the first ferromagnetic layer; a second perpendicular magnetic field applying layer disposed on a side opposite to a side on which the first perpendicular magnetic field applying layer is disposed with respect to the spin-orbit torque wiring, and an orientation of a magnetization in the first perpendicular magnetic field applying layer and an orientation of a magnetization in the second perpendicular magnetic field applying layer coincide with each other; end an insulating layer that is disposed between the spin-orbit torque wiring and the first perpendicular magnetic field applying layer, wherein the first perpendicular magnetic field applying layer is configured to apply an assistant magnetic field assisting a magnetization rotation of the first ferromagnetic layer; the insulating layer is disposed to come into direct contact with the spin-orbit torque wiring, wherein an axis of easy magnetization of the first ferromagnetic layer is in the first direction, and wherein the orientation of magnetization of the first perpendicular magnetic field applying layer is in the second direction, and a magnetic field generated by the first perpendicular magnetic field applying layer has at least a component in the second direction. 2. The spin current magnetization rotational element according to claim 1 , wherein the first perpendicular magnetic field applying layer is electrically separated from the first ferromagnetic layer. 3. The spin current magnetization rotational element according to claim 1 , wherein the spin-orbit torque wiring is disposed between the first ferromagnetic layer and the first perpendicular magnetic field applying layer. 4. The spin current magnetization rotational element according to claim 1 , wherein a value of a film thickness of the spin-orbit torque wiring is a value smaller than a value of a spin diffusion length of the spin-orbit torque wiring.
Assignees
Inventors
Classifications
- G11C11/161Primary
details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell · CPC title
Materials of the active region · CPC title
Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title
Writing or programming circuits or methods · CPC title
- H01F10/329Primary
Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title
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Frequently asked questions
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- What does patent US10840002B2 cover?
- Provided is a spin current magnetization rotational element including: a spin-orbit torque wiring that extends in a first direction and is configured to generate a spin current; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring and is configured for magnetization direction to be changed; and a first perpendicular magnetic field applyin…
- Who is the assignee on this patent?
- Tdk Corp
- What technology area does this patent fall under?
- Primary CPC classification G11C11/161. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 17 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).