Image sensor having separate, stacked, pixel array, DRAM, and logic/analog-digital converter integrated circuit die

Patent metadata

Field	Value
Publication number	US-10834347-B2
Application number	US-201816133449-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 17, 2018
Publication date	Nov 10, 2020
Grant date	Nov 10, 2020

Abstract

A multiple IC, buffered, image sensor has a first IC with pixels, selection transistors, and interconnect coupling selected pixels with first inter-die bond pads that convey image data to a second IC having logic and ADCs. The ADCs having inputs coupled to selected pixels and outputting through-silicon vias and inter-die bond pads to a third IC coupled to buffer raw image data in DRAM. A method includes capturing images with array pixel IC divided into sub-arrays each coupled to a separate, associated, ADC through inter-die bonds, scanning the sub-arrays and converting the image data to digital image data; and transferring the digital image data over inter-die bonds into buffers in DRAM.

First claim

What is claimed is:

1. A multiple integrated-circuit (IC), buffered, image sensor comprising:
a first IC further comprising an array of pixels, the array of pixels divided into a plurality of sub-arrays of pixels, each sub-array of pixels further comprising selection transistors
each sub-array of pixels coupled through inter-die bonds to provide analog pixel data to a separate analog-to-digital converter of a plurality of analog-to-digital converters (ADCs) located on a second IC further comprising logic transistors, the ADCs having outputs coupled by through-silicon vias to a third IC through inter-die bonds, the second IC incorporating image processing circuitry adapted to perform color processing and at least image compression;
the third IC further comprising dynamic RAM (DRAM) coupled to receive and buffer image data in the DRAM from the ADCs on the second IC and to provide image data to the image processing circuitry on the second IC;
the third IC further comprising a one-time-programmable (OTP) memory configured to provide a bad cell map to the DRAM and to provide buffered bad-pixel data to the image processing circuitry on the second IC.

2. The image sensor of claim 1 wherein there are a plurality of die bonds to the third IC for each ADC output, and a single inter-die bond to the first IC for each ADC input.

3. The image sensor of claim 1 wherein the DRAM buffers data from the ADCs.

4. The image sensor of claim 3 wherein the DRAM buffers are configured as a multi-image buffer.

5. The image sensor of claim 4 further comprising a compressed-image buffer within the third IC.

6. The image sensor of claim 5 where the compressed image buffer is implemented using DRAM cells.

7. The image sensor of claim 4 , the second IC incorporating one-time-programmable (OTP) memory cells, the OTP memory cells coupled to affect operation of the second and third ICs.

8. The device of claim 7 wherein the third IC further comprises registers that buffer output of the OTP cells.

9. The device of claim 7 wherein the third IC further comprises static RAM (SRAM).

10. A method comprising:
receiving an image onto an array pixel IC, the array pixel IC having an array of pixels divided into a plurality of sub-arrays of pixels;
capturing the image as image data in pixels of the sub-arrays of pixels, where each sub-array is coupled to a separate, associated, analog-to-digital converter of a plurality of analog to digital converters through at least one inter-die bond, the analog to digital converters located on a logic IC;
scanning the sub-arrays of pixels and reading the image data from pixels of the sub-arrays into the associated analog-to-digital converters and converting the image data to digital image data;
reading a one-time-programmable (OTP) memory on a dynamic RAM (DRAM) IC separate from the array pixel IC and the logic IC to determine a mapping of bad cells in a dynamic random-access memory (DRAM) located on the DRAM IC;
transferring the digital image data over inter-die bonds and buffering the digital image data in the DRAM;
reading the OTP memory, and buffering data from the OTP memory on the DRAM IC, to obtain a mapping of bad pixels in the array of pixels on the array pixel IC and providing the mapping of bad pixels to imaging processing circuitry on the logic IC;
and reading the digital image data from the DRAM on the DRAM IC over inter-die bonds into the image processing circuitry on the logic IC and performing image processing.

11. The method of claim 10 further comprising:
testing the array pixel IC to determine the mapping of bad pixels;
programming information of the bad pixels into the one time programmable (OTP) memory; and
using the information of the bad pixels during color processing.

12. The method of claim 11 further comprising transferring the information of bad pixels across inter-die bonds.

13. The method of claim 10 , further comprising testing DRAM cells of the DRAM to identify bad cells and programming information regarding the bad cells into OTP memory.

14. The device of claim 10 further comprising a pixel IC comprising photodiodes, the pixel IC bonded by inter-die bonds to an IC selected from the group consisting of the logic IC and the DRAM IC.

15. A multi-integrated-circuit imaging device comprising a pixel array IC, a logic IC and a dynamic random access memory (DRAM) IC, the pixel array IC being bonded by inter-die bonds to the logic IC and the DRAM IC being bonded by inter-die bonds to the logic IC, a one-time-programmable (OTP) memory fabricated on an IC selected from the group consisting of the DRAM IC and the logic IC, the multi-integrated-circuit device configured such that contents of the OTP memory is buffered to provide a mapping of bad pixel data to affect operation of image processing circuitry on the logic IC, and contents of the OTP memory is buffered to provide bad-cell data to affect operation of the DRAM on the DRAM IC;
the pixel array IC having an array of pixels divided into a plurality of sub-arrays of pixels where each sub-array is coupled to a separate, associated, analog-to-digital converter of a plurality of analog to digital converters located on the logic IC.

16. The multi-integrated-circuit device of claim 15 wherein the logic IC includes the OTP memory and buffered contents of the OTP memory is transferred to the DRAM IC.

17. The multi-integrated-circuit device of claim 15 wherein the multi-integrated-circuit device implements a field-programmable gate array (FPGA) including DRAM arrays configurable for use within the FPGA, and wherein the OTP memory provides at least an initial configuration for the FPGA.

Assignees

• Omnivision Tech Inc

Inventors

• Jung Taehyung
• Ryu Hoon
• Yang Zheng
• Yoon Hyunsu
• Chen Chia-Ming

Classifications

• H04N25/772 Primary

  comprising A/D, V/T, V/F, I/T or I/F converters · CPC title

• H04N25/79

  Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors · CPC title

• H04N25/771 Primary

  comprising storage means other than floating diffusion · CPC title

• H10F39/8057 Primary

  Optical shielding · CPC title

• H10F39/8053

  Colour filters · CPC title