Insulating tunneling contact for efficient and stable perovskite solar cells

Patent metadata

Field	Value
Publication number	US-10833283-B2
Application number	US-201816130797-A
Country	US
Kind code	B2
Filing date	Sep 13, 2018
Priority date	Mar 15, 2016
Publication date	Nov 10, 2020
Grant date	Nov 10, 2020

Abstract

Perovskite-based photoactive devices, such as solar cells, include an insulating tunneling layer inserted between the perovskite photoactive material and the electron collection layer to reduce charge recombination and concomitantly provide water resistant properties to the device.

First claim

The invention claimed is:

1. A photoactive device, comprising:
a first electrode layer;
a second electrode layer; wherein the first electrode layer comprises a first conductive material layer disposed on a first carrier transport layer;
a perovskite material disposed between the first electrode layer and the second electrode layer, wherein the first carrier transport layer is disposed between the first conductive material layer and the perovskite material; and
an insulating layer disposed between the first electrode layer and the perovskite material.

2. The photoactive device of claim 1 , wherein the first electrode layer is a cathode layer.

3. The photoactive device of claim 1 , wherein the first electrode layer is an anode layer.

4. The photoactive device of claim 1 , wherein the insulating layer comprises an insulating dielectric material.

5. The photoactive device of claim 4 , wherein the insulating dielectric material comprises an insulating polymer material.

6. The photoactive device of claim 5 , wherein the insulating polymer material includes at least one polymer selected from the group consisting of polystyrene (PS), fluoro silane, polyvinylidenefluoride-trifluoroethylene (PVDF:TrFE), polymethyl methacrylate (PMMA), poly(dimethylsiloxane) (PDMS), polycarbonate (PC), polyvinylpyrrolidone (PVP), poly(vinyl alcohol) (PVA), poly(ethylene terepthalate) (PET), polyvinyl chloride (PVC), polypropylene (PP), and polytetrafluoroethylene (PTFE).

7. The photoactive device of claim 5 , wherein the insulating polymer material includes an amphiphilic polymer selected from the group consisting of Tween 20, Tween 40, Tween 60, Tween 80, D-α-Tocopherol polyethylene glycol 1000 succinate, PEG-PLA diblock copolymer, PEG-PLGA diblock copolymer, PEG-PCL diblock copolymer, PEG-PE diblock copolymer, PEG-PS diblock copolymer, PS-PAA amphiphilic diblock copolymer, and Triton™ X-114, where PEG is Poly(ethylene glycol), PLA is polylactide, PLGA is poly(L-lactide-co-glycolide), PCL is poly(ε-caprolactone), PE is Polyethylene, PS is Poly(styrene), and PAA is poly(acrylic acid).

8. The photoactive device of claim 1 , wherein the insulation layer is a first insulating layer and wherein the device further includes a second insulating polymer material disposed between the second electrode layer and the perovskite material.

9. The photoactive device of claim 8 , wherein the second electrode layer comprises a second conductive material layer disposed on a second carrier transport layer, wherein the second carrier transport layer is disposed between the second conductive material layer and the perovskite material.

10. The photoactive device of claim 9 , wherein each carrier transport layer comprises at least one material selected from the group consisting of BCP, a fullerene, and a fullerene-derivative.

11. The photoactive device of claim 10 , wherein the fullerene includes one of C 60 , C 70 , C 71 , C 76 , C 78 , C 80 , C 82 , C 84 , and C 92 , and wherein C 70 and C 84 derivatives include PC 70 BM, IC 70 BA, and PC 84 BM.

12. The photoactive device of claim 11 , wherein each carrier transport layer has a band gap of less than or equal to about 5.0 eV.

13. The photoactive device of claim 9 , wherein each carrier transport layer comprises at least one C 60 derivative wherein the at least one C 60 derivative is selected from the group consisting of C 60 PCBM, bis-adduct C 60 PCBM, tris-adduct C 60 PCBM, tetra-adduct C 60 PCBM, penta-adduct C 60 PCBM, hexa-adduct C 60 PCBM, C 60 ThCBM, bis-adduct C 60 ThCBM, tris-adduct C 60 ThCBM, tetra-adduct C 60 ThCBM, penta-adduct C 60 ThCBM, hexa-adduct C 60 ThCBM, C 60 mono-indene adduct, C 60 bis-indene adduct, C 60 tris-indene adduct, C 60 tetra-indene adduct, C 60 penta-indene adduct, C 60 hexa-indene adduct, C 60 mono-quinodimethane adduct, C 60 bis-quinodimethane adduct, C 60 tris-quinodimethane adduct, C 60 tetra-quinodimethane adduct, C 60 penta-quinodimethane adduct, C 60 hexa-quinodimethane adduct, C 60 mono-(dimethyl acetylenedicarboxylate) adduct, C 60 bis-(dimethyl acetylenedicarboxylate) adduct, C 60 tris-(dimethyl acetylenedicarboxylate) adduct, C 60 tetra-(dimethyl acetylenedicarboxylate) adduct, C 60 penta-(dimethyl acetylenedicarboxylate) adduct, C 60 hexa-(dimethyl acetylenedicarboxylate) adduct.

14. The photoactive device of claim 1 , wherein the perovskite material includes a perovskite having the formula ABX 3 or A 2 BX 4 , wherein A is methylammonium (CH 3 NH 3 +), Cs+ or formamidinium (H 2 NCHNH 2 +), B is a metal cation, and X is a halide anion, thiocyanate (SCN—) or mixture thereof.

15. The photoactive device of claim 14 , wherein the metal cation is Pb 2+ , Sn 2+ , Cu 2+ , or Bi 3+ and wherein the halide anion X comprises one of I—, Cl—, Br— or a mixture thereof.

16. The photoactive device of claim 1 , wherein the perovskite material includes a single crystal perovskite.

17. The photoactive device of claim 1 , wherein the insulating layer is hydrophobic.

18. The photoactive device of claim 1 , wherein the perovskite material is a thin film.

19. The photoactive device of claim 1 , wherein the insulating material has a thickness of between about 0.0001 nm and about 100 nm.

20. The photoactive device of claim 1 , wherein the first electrode layer and the second electrode layer each comprise a conductive transparent or semi-transparent material selected from the group consisting of metal films, conductive polymers, carbon nanotubes, graphene, organic or inorganic transparent conducting films (TCFs), and transparent conducting oxides (TCOs).

21. The photoactive device of claim 1 , wherein the perovskite material layer has a band gap of less than or equal to about 3.0 eV.

22. A photoactive device, comprising:
a first electrode layer;
a second electrode layer;
a perovskite material disposed between the first electrode layer and the second electrode layer; and
a cross-linked fullerene layer disposed between the first electrode layer and the perovskite material; wherein the cross-linked fullerene layer includes a fullerene crosslinked with a silane.

23. The photoactive device of claim 22 , wherein the fullerene comprises C 60 -SAM and the silane comprises a structure having a formula:
F 3 C—(CF 2 ) m —(CH 2 ) n —Si(X) z (Y) 3-z

wherein:
m is 0 to 16;
nisi to 16;
z is 1, 2, or 3;
each X is independently selected from the group consisting of chloride, alkoxy, aryloxy, aralkoxy, hydroxyl, and halo; and
each Y is independently selected from the group consisting of H, alkyl, aryl, and aralkyl.

24. The photoactive device of claim 22 , wherein the fullerene layer is doped by an I-containing species.

25. The photoactive device of claim 24 , wherein the I-containing species includes CH 3 NH 3 I.

26. A photoactive device, comprising:
a first electrode layer;
a second electrode layer;
a perovskite material disposed between the first electrode layer and the second electrode layer; and
a first insulating layer disposed between the first electrode layer and the perovskite material;
a second insulating polymer material disposed between the second electrode layer and the perovskite material.

27. The photoactive device of claim 26 , wherein the first electrode layer comprises a first conductive material layer disposed on a first carrier transport layer, wherein the first carrier transport layer is disposed between th

Assignees

• Nutech Ventures

Inventors

• Huang Jinsong
• Zheng Xiaopeng
• Wang Qi
• Bai Yang
• Dong Qingfeng

Classifications

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/40

  comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• H10K85/371

  Metal complexes comprising a group IB metal element, e.g. comprising copper, gold or silver · CPC title

• H10K85/215 Primary

  comprising substituents, e.g. PCBM · CPC title