Linear inspection system
US-2015377796-A1 · Dec 31, 2015 · US
US10833210B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10833210-B2 |
| Application number | US-201414323986-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2014 |
| Priority date | Jul 5, 2013 |
| Publication date | Nov 10, 2020 |
| Grant date | Nov 10, 2020 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
Discussed is a solar cell including a semiconductor substrate, a tunneling layer formed on one surface of the semiconductor substrate, a first conductive semiconductor layer formed on a surface of the tunneling layer and a second conductive semiconductor layer formed on the surface the tunneling layer. A separation portion separates the first and second conductive semiconductor layers from each other, and is formed on the surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers.
Opening claim text (preview).
What is claimed is: 1. A solar cell comprising: a semiconductor substrate including monocrystalline silicon; a first conductive semiconductor layer formed of a polycrystalline semiconductor and formed on one surface of the semiconductor substrate; a second conductive semiconductor layer formed of a polycrystalline semiconductor and formed on the one surface of the semiconductor substrate; a tunneling layer entirely formed on the one surface of the semiconductor substrate between the semiconductor substrate and the first and second conductive semiconductor layers; a separation portion to separate the first and second conductive semiconductor layers from each other, and formed on a surface of the tunneling layer at a location corresponding to at least a portion of a boundary between the first and second conductive semiconductor layers; a plurality of electrodes contacting with at least the first conductive semiconductor layer and the second conductive semiconductor layer, and including a first electrode and a second electrode; and an insulation layer formed on the first and second conductive semiconductor layers, wherein the separation portion includes a trench in the form of an empty space, wherein the trench includes a plurality of first trench portions extending in a first direction, a plurality of second trench portions connecting first ends of the plurality of first trench portions, and a plurality of third trench portions connecting second ends opposite to the first ends of the plurality of first trench portions, and wherein a shape of the plurality of second trench portions is semi-circular and a shape of the plurality of third trench portions is a straight line extending in a second direction between two curved portions, wherein the separation portion of the empty space has a width less than each of a width of the first conductive semiconductor layer and a width of the second conductive semiconductor layer, wherein insulation layer is disposed on both lateral surfaces and a bottom surface of the trench, and portions of the insulation layer disposed on both the lateral surfaces are apart from each other, wherein the width of the first conductive semiconductor layer is greater than the width of ti second conductive semiconductor layer, wherein a width of each electrode is greater than the width of the separation portion, and wherein the width of each electrode is less than the width of the second conductive semiconductor layer. 2. The solar cell according to claim 1 , wherein the separation portion is partially formed between the first conductive semiconductor layer and the second conductive semiconductor layer when viewed in plane. 3. The solar cell according to claim 1 , wherein the separation portion is wholly formed between the first conductive semiconductor layer and the second conductive semiconductor layer when viewed in plane. 4. The solar cell according to claim 1 , wherein the trench is a continuously formed single trench. 5. The solar cell according to claim 4 , wherein the first conductive semiconductor layer includes a plurality of first branch portions arranged in parallel to one another, wherein the second conductive semiconductor layer includes a plurality of second branch portions arranged in parallel to one another, and wherein the plurality of first trench portions are formed between the first branch portions and the second branch portions, the plurality of first trench portions having an elongated shape and extending in a longitudinal direction of the first and second branch portions, and the plurality of second trench portions each alternately interconnect two neighboring first trench portions among the plural first trench portions. 6. The solar cell according to claim 1 , wherein portions of the insulation layer contact the tunneling layer. 7. The solar cell according to claim 1 , wherein the insulation layer does not overlap with each electrode in a direction normal to the one surface of the semiconductor substrate. 8. The solar cell according to claim 1 , wherein a width of an opening of the insulation layer is the same with a width of each electrode. 9. The solar cell according to claim 1 , wherein each electrode is thicker than the insulation layer. 10. The solar cell according to claim 1 , wherein the insulation layer has a uniform thickness. 11. The solar cell according to claim 1 , wherein the trench is serpentine between interdigitated first and second conductive semiconductor layers.
Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) · CPC title
Coatings (arrangements for preventing damage to photovoltaic cells caused by corpuscular radiation H10F77/80) · CPC title
Photovoltaic [PV] energy · CPC title
Individual photovoltaic cells, e.g. solar cells (electrolytic light-sensitive devices, e.g. dye-sensitised solar cells, H01G9/20) · CPC title
comprising only Group IV materials · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.