Integrated circuit and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10833094-B2
Application number	US-201815954874-A
Country	US
Kind code	B2
Filing date	Apr 17, 2018
Priority date	Dec 29, 2015
Publication date	Nov 10, 2020
Grant date	Nov 10, 2020

Abstract

An integrated circuit includes a high-voltage MOS (HV) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the HV transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon. The capacitor includes a first electrode made of the first polysilicon and a second electrode made of a second polysilicon and at least partly resting over the first electrode. A first polysilicon layer deposited over the semiconductor substrate is patterned to form the first polysilicon of the gate electrode and first electrode, respectively. A second polysilicon layer deposited over the semiconductor substrate is patterned to form the second polysilicon of the second electrode. Silicon oxide spacers laterally border the second electrode and the gate stack of the HV transistor. Silicon nitride spacers border the silicon oxide spacers.

First claim

The invention claimed is:

1. A method, comprising the steps of:
depositing a first polysilicon layer;
etching the first polysilicon layer to form a first capacitor electrode and a transistor gate;
depositing, in order, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer on both the first capacitor electrode and transistor gate;
depositing a second polysilicon layer;
etching the second polysilicon layer to form a second capacitor electrode separated from the first capacitor electrode by the first silicon oxide layer, the silicon nitride layer, and the second silicon oxide layer;
etching a portion of the second silicon oxide layer that is not covered by the second capacitor electrode to leave first portions of the first silicon oxide layer and the silicon nitride layer extending beyond side edges of the second capacitor electrode;
forming first sidewall spacers on the side edges of the second capacitor electrode, adjacent a side edge of the first capacitor electrode and adjacent side edges of the transistor gate, wherein said first sidewall spacers rest on the first portions of the silicon nitride layer;
etching a portion of the silicon nitride layer that is not covered by the first sidewall spacers to leave second portions of the first silicon oxide layer; and
forming second sidewall spacers adjacent said side edge of the first capacitor electrode and adjacent side edges of the second capacitor electrode and the transistor gate, wherein said second sidewall spacers rest on the second portions of the first silicon oxide layer.

2. The method of claim 1 , wherein the first sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

3. The method of claim 1 , wherein the second sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

4. The method of claim 1 , further comprising:
etching a portion of the first silicon oxide layer that is not covered by the second sidewall spacers to expose a substrate layer; and
forming third sidewall spacers adjacent said side edge of the first capacitor electrode and adjacent side edges of the second capacitor electrode and the transistor gate, wherein said third sidewall spacers rest on the substrate layer.

5. The method of claim 4 , wherein the third sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

6. A method, comprising the steps of:
forming a first capacitor electrode and a transistor gate;
depositing, in order, a first silicon oxide layer, a silicon nitride layer, and a second silicon oxide layer on both the first capacitor electrode and transistor gate;
forming a second capacitor electrode separated from the first capacitor electrode by the first silicon oxide layer, the silicon nitride layer, and the second silicon oxide layer;
removing a portion of the second silicon oxide layer that is not covered by the second polysilicon capacitor electrode to leave first portions of the first silicon oxide layer and the silicon nitride layer extending beyond side edges of the second capacitor electrode;
forming first sidewall spacers on the side edges of the second capacitor electrode, adjacent a side edge of the first capacitor electrode and adjacent side edges of the transistor gate, wherein said first sidewall spacers rest on the first portions of the silicon nitride layer;
removing a portion of the silicon nitride layer that is not covered by the first sidewall spacers to leave second portions of the first silicon oxide layer; and
forming second sidewall spacers adjacent said side edge of the first capacitor electrode and adjacent side edges of the second capacitor electrode and the transistor gate, wherein said second sidewall spacers rest on the second portions of the first silicon oxide layer.

7. The method of claim 6 , wherein the first sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

8. The method of claim 6 , wherein the second sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

9. The method of claim 6 , further comprising:
removing a portion of the first silicon oxide layer that is not covered by the second sidewall spacers to expose a substrate layer; and
forming third sidewall spacers adjacent said side edge of the first capacitor electrode and adjacent side edges of the second capacitor electrode and the transistor gate, wherein said third sidewall spacers rest on the substrate layer.

10. The method of claim 9 , wherein the third sidewall spacers comprise a multilayer of a silicon oxide layer and a silicon nitride layer.

Assignees

• St Microelectronics Crolles 2 Sas

Inventors

• Piazza Fausto
• Lagrasta Sebastien
• Bianchi Raul Andres
• Jeannot Simon

Classifications

• H10P50/264

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/416

  of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10D64/01306 Primary

  the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon · CPC title