Phase-change material (PCM) radio frequency (RF) switches with capacitively coupled upper portions of RF terminals

Patent metadata

Field	Value
Publication number	US-10833005-B2
Application number	US-201916683713-A
Country	US
Kind code	B2
Filing date	Nov 14, 2019
Priority date	Aug 14, 2018
Publication date	Nov 10, 2020
Grant date	Nov 10, 2020

Abstract

A radio frequency (RF) switch includes a phase-change material (PCM), a heating element underlying an active segment of the PCM and extending outward and transverse to the PCM, and RF terminals having lower metal portions and upper metal portions. At least one of the lower metal portions can be ohmically separated from and capacitively coupled to passive segments of the PCM, while the upper metal portions are ohmically connected to the lower metal portions. Alternatively, the lower metal portions can be ohmically connected to passive segments of the PCM, while a capacitor is formed in part by at least one of the upper metal portions. Alternatively, at least one of the RF terminals can have a trench metal liner separated from a trench metal plug by a dielectric liner. The trench metal liner can be ohmically connected to passive segments of the PCM, while the trench metal plug is ohmically separated from, but capacitively coupled to, the trench metal liner.

First claim

The invention claimed is:

1. A radio frequency (RF) switch comprising:
a phase-change material (PCM) and a heating element approximately underlying an active segment of said PCM and extending outward and transverse to said PCM;
RF terminals comprising lower metal portions and upper metal portions;
said lower metal portions of said RF terminals being ohmically connected to passive segments of said PCM;
said upper metal portions of said RF terminals comprising a first interconnect metal, and being ohmically connected to said lower metal portions of said RF terminals;
wherein at least one of said upper metal portions of said RF terminals is capacitively coupled by a MIM capacitor formed by said first interconnect metal, an insulating film, and a top MIM metal.

2. The RF switch of claim 1 , wherein said top MIM metal is connected to a second interconnect metal.

3. The RF switch of claim 1 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

4. The RF switch of claim 1 , further comprising a contact uniformity support layer over said PCM.

5. The RF switch of claim 4 , wherein said contact uniformity support layer comprises Si X N Y .

6. The RF switch of claim 4 , wherein said contact uniformity support layer is a bi-layer that comprises material selected from the group consisting of SiO 2 and Si X N Y .

7. The RF switch of claim 1 , further comprising a thermally conductive and electrically insulating layer situated over said heating element.

8. The RF switch of claim 7 , wherein said thermally conductive and electrically insulating layer comprises material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (Al X O Y ), beryllium oxide (Be X O Y ), silicon carbide (SiC), diamond, and diamond-like carbon.

9. A radio frequency (RF) switch comprising:
a phase-change material (PCM);
an RF terminal comprising a lower metal portion and an upper metal portion;
said lower metal portion of said RF terminal being ohmically connected to said PCM;
said upper metal portion of said RF terminal being ohmically connected to said lower metal portion of said RF terminal;
said upper metal portion of said RF terminal comprising a first interconnect metal that is coupled to a second interconnect metal by a MOM capacitor formed by said first interconnect metal, an interlayer dielectric, and said second interconnect metal.

10. The RF switch of claim 9 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

11. A method for fabricating a radio frequency (RF) switch, said method comprising:
forming a phase-change material (PCM);
forming a lower metal portion of an RF terminal ohmically connected to said PCM;
forming an upper metal portion of said RF terminal comprising a first interconnect metal, said upper metal portion of said RF terminal being ohmically connected to said lower metal portion of said RF terminal;
forming a capacitor to capacitively couple a second interconnect metal to said first interconnect metal.

12. The method of claim 11 , wherein said forming a capacitor comprises forming a MOM by said first interconnect metal, an interlayer dielectric, and said second interconnect metal.

13. The method of claim 11 , wherein said forming a capacitor comprises forming a MIM capacitor by said first interconnect metal, an insulating film, and a top MIM metal, wherein said top MIM metal is connected to said second interconnect metal.

14. The method of claim 11 , wherein said PCM is selected from the group consisting of germanium telluride (Ge X Te Y ), germanium antimony telluride (Ge X Sb Y Te Z ), germanium selenide (Ge X Se Y ), and any other chalcogenide.

15. The method of claim 11 , further comprising forming a contact uniformity support layer over said PCM, wherein said contact uniformity support layer comprises Si X N Y .

16. The method of claim 11 , further comprising forming a contact uniformity support layer over said PCM, wherein said contact uniformity support layer is a bi-layer that comprises material selected from the group consisting of SiO 2 and Si X N Y .

Assignees

• Newport Fab Llc

Inventors

• El-Hinnawy Nabil
• Slovin Gregory P
• Rose Jefferson E
• Howard David J

Classifications

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/496 Primary

  Capacitor integral with wiring layers · CPC title

• H10W20/495 Primary

  Capacitive arrangements or effects of, or between wiring layers · CPC title

• H10B63/10

  Phase change RAM [PCRAM, PRAM] devices · CPC title

• H10N79/00

  Integrated devices, or assemblies of multiple devices, comprising at least one solid-state element covered by group H10N70/00 (ReRAM devices H10B63/00; PCRAM devices H10B63/10) · CPC title