Scanning tunneling thermometer

Patent metadata

Field	Value
Publication number	US-10830792-B2
Application number	US-201916352808-A
Country	US
Kind code	B2
Filing date	Mar 13, 2019
Priority date	Mar 13, 2018
Publication date	Nov 10, 2020
Grant date	Nov 10, 2020

Abstract

Various examples are provided related to scanning tunneling thermometers and scanning tunneling microscopy (STM) techniques. In one example, a method includes simultaneously measuring conductance and thermopower of a nanostructure by toggling between: applying a time modulated voltage to a nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip. In another example, a device includes an interconnect structure with connections to a first reservoir and a second reservoir; and a scanning tunneling probe in contact with a probe reservoir. Electrical measurements are simultaneously obtained for temperature and voltage applied to a nanostructure between the reservoirs.

First claim

Therefore, at least the following is claimed:

1. A device comprising:
an interconnect structure comprising connections to a first reservoir and a second reservoir, the interconnect structure configured to support a nanostructure between the connections to the first and second reservoirs; and
a scanning tunneling probe comprising a probe tip in series with a calibrated thermoresistor, the scanning tunneling probe in contact with a probe reservoir, wherein electrical measurements are simultaneously obtained for temperature and voltage applied to the nanostructure.

2. The device of claim 1 , wherein the scanning tunneling probe scans a surface at a constant height and is not in contact with the nanostructure surface.

3. The device of claim 1 , wherein the first reservoir or the second reservoir is biased to form a system in which the nanostructure is out of equilibrium.

4. The device of claim 1 , further comprising a switch connected to each of the first and second reservoirs, wherein the switch connects or disconnects the first reservoir or the second reservoir to a time-modulated voltage.

5. The device of claim 1 , wherein the nanostructure is a nanoscale conductor.

6. The device of claim 1 , wherein the nanostructure is connected to more than two reservoirs through corresponding switches.

7. The device of claim 6 , wherein a single one of the more than two reservoirs is connected to the interconnect structure by the corresponding switch while all other reservoirs of the more than two reservoirs remain disconnected.

8. A method, comprising:
simultaneously measuring conductance and thermopower of a nanostructure by toggling between:
applying a time modulated voltage to the nanostructure disposed on an interconnect structure, the time modulated voltage applied at a probe tip positioned over the nanostructure, while measuring a resulting current at a contact of the interconnect structure; and
applying a time modulated temperature signal to the nanostructure at the probe tip, while measuring current through a calibrated thermoresistor in series with the probe tip.

9. The method of claim 8 , wherein the time modulated voltage is provided by an AC bias voltage.

10. The method of claim 8 , wherein the time modulated voltage is alternated between a first reservoir and a second reservoir.

11. The method of claim 10 , wherein the first reservoir is connected to a first side of the nanostructure and the second reservoir is connected to a second side of the nanostructure opposite the first side.

12. The method of claim 8 , wherein the nanostructure is a nanoscale conductor.

13. The method of claim 8 , comprising repositioning the probe tip to another location over the nanostructure before repeating the simultaneous measurement of conductance and thermopower of the nanostructure.

14. The method of claim 13 , wherein the probe tip is maintained at a constant height over the nanostructure during the simultaneous measurements at different locations.

15. The method of claim 8 , wherein the nanostructure is connected to more than two reservoirs.

16. The method of claim 15 , wherein a switch connects a single one of the more than two reservoirs while all other reservoirs of the more than two resevoirs are disconnected.

17. A device comprising:
an interconnect structure comprising connections to a first reservoir and a second reservoir, the interconnect structure configured to support a nanostructure between the connections to the first and second reservoirs;
controllable calibrated heating elements on the first and second reservoirs; and
a scanning tunneling probe comprising a sharp probe tip, wherein electrical measurements are simultaneously obtained for temperature and voltage applied to the nanostructure.

18. The device of claim 17 , wherein the scanning tunneling probe scans a surface at a constant height and is not in contact with the nanostructure surface.

19. The device of claim 17 , further comprising a switch connected to each of the controllable calibrated heating elements, wherein the switch connects or disconnects the controllable calibrated heating elements to a time-modulated voltage.

20. The device of claim 19 , further comprising a switch connected to each of the first and second reservoirs, wherein the switch connects or disconnects the first reservoir or the second reservoir to a time-modulated voltage.

Assignees

• Univ Arizona

Inventors

• Chinivaranahalli Shastry Abhay Shankar
• Stafford Charles Allen

Classifications

• G01Q60/58

  SThM [Scanning Thermal Microscopy] or apparatus therefor, e.g. SThM probes · CPC title

• G01Q60/14

  STP [Scanning Tunnelling Potentiometry] · CPC title

• G01K11/00

  Measuring temperature based upon physical or chemical changes not covered by groups G01K3/00, G01K5/00, G01K7/00 or G01K9/00 · CPC title

• G01Q60/10 Primary

  STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes · CPC title

• G01K7/00 Primary

  Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat (giving results other than momentary value of temperature G01K3/00) {; Power supply therefor, e.g. using thermoelectric elements} · CPC title