Gas barrier film

US10829643B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10829643-B2
Application numberUS-201314759829-A
CountryUS
Kind codeB2
Filing dateDec 25, 2013
Priority dateJan 11, 2013
Publication dateNov 10, 2020
Grant dateNov 10, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

The gas barrier film includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.

First claim

Opening claim text (preview).

The invention claimed is: 1. A gas barrier film comprising a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other, wherein ZnLMM spectral curves taken by X-ray photoelectron spectroscopy from an interface region [I] in the inorganic layer [A] facing to the silicon compound layer [B] are broader than those from a central region of the inorganic layer [A], wherein a water vapor permeability of the gas barrier film in an atmosphere with a temperature of 40° C. and relative humidity of 90% RH is 7.5×10 −6 to 6.5×10 −5 g/(m 2 ·d), obtainable by a process comprising: (a) forming the inorganic layer [A] containing a zinc compound and silicon oxide on a polymer base by sputtering; and (b) forming the silicon compound layer [B] containing silicon oxynitride on the inorganic layer [A] by spreading a coating liquid containing a silicon compound having a polysilazane backbone, then drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere. 2. The gas barrier film as described in claim 1 wherein the polymer base and the inorganic layer [A] sandwich an undercoat layer [C] that contains a structure in the form of a crosslinked product of a polyurethane compound [C1] having an aromatic ring structure. 3. The gas barrier film as described in claim 2 wherein the undercoat layer [C] contains an organic silicon compound and/or an inorganic silicon compound. 4. The gas barrier film as described in either claim 1 wherein the inorganic layer [A] is either an inorganic layer [A1] that comprises a coexistence phase of zinc oxide, silicon dioxide, and aluminum oxide or an inorganic layer [A2] that comprises a coexistence phase of zinc sulfide and silicon dioxide. 5. The gas barrier film as described in claim 4 wherein the inorganic layer [A] is the inorganic layer [A1], the layer [Al] having a zinc atom concentration of 20 to 40 atom %, a silicon atom concentration of 5 to 20 atom %, an aluminum atom concentration of 0.5 to 5 atom %, and an oxygen atom concentration of 35 to 70 atom % as determined by ICP emission spectroscopy analysis. 6. The gas barrier film as described in claim 4 wherein the inorganic layer [A] is the inorganic layer [A2] in which zinc sulfide accounts for a mole fraction of 0.7 to 0.9 of the total for zinc sulfide and silicon dioxide. 7. The gas barrier film as described in claim 1 wherein in the silicon compound layer [B], the oxygen atom has an atomic composition ratio of 0.1 or more and less than 2.0 relative to the silicon atom and the nitrogen atom has an atomic composition ratio of 0.1 or more and less than 1.0 relative to the silicon atom based on element distributions observed by X-ray photoelectron spectroscopy. 8. An electronic device comprising gas barrier film as described in claim 1 . 9. A production method for gas barrier film comprising step a for forming an inorganic layer [A] containing a zinc compound and silicon oxide on a polymer base by sputtering and step b for forming a silicon compound layer [B] containing silicon oxynitride on the inorganic layer [A] by applying a coating liquid containing a silicon compound having a polysilazane backbone, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere, wherein ZnLMM spectral curves taken by X-ray photoelectron spectroscopy from an interface region [I] in the inorganic layer [A] facing to the silicon compound layer [B] are broader than those from a central region of the inorganic layer [A], wherein a water vapor permeability of the gas barrier film in an atmosphere with a temperature of 40° C. and relative humidity of 90% RH is 7.5×10 −6 g/(m 2 d) to 6.5×10 −5 g/(m 2 d). 10. A production method for gas barrier film comprising a step, referred to as step c, for forming an undercoat layer [C] on a polymer base by applying a coating liquid containing a polyurethane compound [C1] having an aromatic ring structure, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere, step a for forming an inorganic layer [A] containing a zinc compound and silicon oxide on the undercoat layer [C] by sputtering, and step b for forming a silicon compound layer [B] containing silicon oxide and silicon oxynitride on the inorganic layer [A] by applying a coating liquid containing a silicon compound having a polysilazane backbone, drying it to form a coat film, and subsequently applying an active energy ray to the coat film in a nitrogen atmosphere, wherein ZnLMM spectral curves taken by X-ray photoelectron spectroscopy from an interface region [I] in the inorganic layer [A] facing to the silicon compound layer [B] are broader than those from a central region of the inorganic layer [A], wherein a water vapor permeability of the gas barrier film in an atmosphere with a temperature of 40° C. and relative humidity of 90% RH is 7.5×10 −6 g/(m 2 d) to 6.5×10 −5 g/(m 2 d).

Assignees

Inventors

Classifications

  • C08J7/048Primary

    Forming gas barrier coatings · CPC title

  • Forming abrasion-resistant coatings; Forming surface-hardening coatings · CPC title

  • C09D1/00Primary

    Coating compositions, e.g. paints, varnishes or lacquers, based on inorganic substances · CPC title

  • with at least one layer of inorganic material and at least one layer of a composition containing a polymer binder · CPC title

  • Characterised by the use of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain (C08J2307/00 - C08J2357/00, C08J2361/00 take precedence); Derivatives of such polymers · CPC title

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What does patent US10829643B2 cover?
The gas barrier film includes a polymer base having an inorganic layer [A] and a silicon compound layer [B] stacked in this order at least on one side of the polymer base, the inorganic layer [A] containing a zinc compound and silicon oxide, the silicon compound layer [B] containing silicon oxynitride, and the inorganic layer [A] and the silicon compound layer [B] being in contact with each other.
Who is the assignee on this patent?
Toray Industries
What technology area does this patent fall under?
Primary CPC classification C08J7/048. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Nov 10 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).