Phrenic nerve stimulation
US-2024173074-A1 · May 30, 2024 · US
US10828486B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10828486-B2 |
| Application number | US-201615765987-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 28, 2016 |
| Priority date | Oct 30, 2015 |
| Publication date | Nov 10, 2020 |
| Grant date | Nov 10, 2020 |
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A method for manufacturing an electrical conductor includes: depositing a solid metal conductive layer or film on a substrate 30; depositing a liquid metal on the solid layer; and allowing the liquid metal and the solid layer 40 to alloy by diffusion of the liquid metal into the solid layer or film so as to form a solid conductive layer or film of the alloy; as well as allowing the liquid metal to further infiltrate the alloy so as to form percolating paths and/or droplets of the liquid metal in the the solid conductive layer or film, thus forming a biphasic conductive layer.
Opening claim text (preview).
The invention claimed is: 1. A method for manufacturing an electrical conductor, said method comprising: depositing a solid metal layer on a substrate; depositing a liquid metal on said solid metal layer; allowing said liquid metal and said solid metal layer to form an alloy by diffusion of said liquid metal into said solid metal layer so as to form a solid conductive layer of said alloy; allowing said liquid metal to further wet and infiltrate said alloy so as to form percolating paths of said liquid metal in said solid conductive layer, thus forming a biphasic conductive layer comprising said alloy as a solid phase and said percolating paths of said liquid metal as a liquid phase dispersed in the solid phase; allowing said liquid metal to further accumulate into bulges, locally yet randomly, on or within said biphasic conductive layer; and controlling a ratio n between a total number of atoms of said liquid metal and a total number of atoms of said solid metal in said biphasic layer to be between 2 and 50. 2. The method according to claim 1 , wherein said liquid metal is deposited on said solid metal layer by thermal vapour deposition of said liquid metal. 3. The method as claimed in claim 1 , wherein said liquid metal comprises one of gallium or a gallium-based alloy. 4. The method as claimed in claim 1 , wherein said solid metal layer is sputtered on said substrate. 5. The method as claimed claim 1 , wherein said solid metal layer is made of one of Au, Pd, Pt, Ir, or an alloy thereof. 6. The method according to claim 1 , wherein said solid metal layer has a thickness between 10 and 1000 nm. 7. The method as claimed in claim 1 , wherein said substrate is an elastomeric substrate. 8. The method as claimed in claim 1 , wherein said method further comprises patterning said biphasic conductive layer or film so as to form at least one biphasic strip. 9. The method as claimed in claim 8 , wherein said biphasic conductive layer is patterned using one of stencil and photolithography. 10. The method as claimed in claim 1 , wherein said method further comprises encapsulating said biphasic conductive layer by forming an encapsulation layer on said biphasic conductive layer. 11. The method as claimed in claim 10 , said method further comprising forming at least one through via in said encapsulation layer so as to expose at least a portion of said biphasic conductive layer.
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