Semiconductor device

Patent metadata

Field	Value
Publication number	US-10825771-B2
Application number	US-201816124548-A
Country	US
Kind code	B2
Filing date	Sep 7, 2018
Priority date	Mar 16, 2018
Publication date	Nov 3, 2020
Grant date	Nov 3, 2020

Abstract

A semiconductor device includes a semiconductor substrate, an insulating film provided on the semiconductor substrate, a first element disposed at least in a lower layer portion of the insulating film, a second element disposed at least in the lower layer portion of the insulating film, and a hydrogen barrier member provided on the semiconductor substrate. The hydrogen barrier member is made from a material transmitting hydrogen less easily than does a material of the insulating film. The hydrogen barrier member and the semiconductor substrate surround the second element. The hydrogen barrier member does not surround the first element.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
an insulating film provided on the semiconductor substrate;
a first element disposed at least in a lower layer portion of the insulating film;
a second element disposed at least in the lower layer portion of the insulating film; and
a hydrogen barrier member provided on the semiconductor substrate, the hydrogen barrier member being made from a material transmitting hydrogen less easily than does a material of the insulating film, the hydrogen barrier member and the semiconductor substrate surrounding the second element, the hydrogen barrier member not surrounding the first element, and the insulating film being disposed between the hydrogen barrier member and the second element.

2. The device according to claim 1 , wherein the hydrogen barrier member has a box shape open at a lower face, the lower face being covered with the semiconductor substrate.

3. The device according to claim 1 , wherein the insulating film includes silicon oxide, and the hydrogen barrier member includes:
a sidewall surrounding the second element when viewed from above and being made from a metal; and
a top plate contacting the sidewall and being made from silicon nitride.

4. The device according to claim 1 , wherein the insulating film includes silicon oxide; and the hydrogen barrier member is formed as one body of silicon nitride.

5. The device according to claim 1 , wherein the insulating film includes silicon oxide, and the hydrogen barrier member includes:
a sidewall surrounding the second element when viewed from above and being made from a metal; and
a box-shaped member surrounding the second element and the sidewall and being formed as one body of silicon nitride.

6. The device according to claim 1 , wherein the first element is a transistor.

7. The device according to claim 1 , wherein the second element is a transistor, a memory element, or a resistance element.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp

Inventors

• Toda Nobuyuki
• Yamamoto Takeshi
• Kawahara Shinji
• Yamaura Kazuaki
• Ishikawa Takashi

Classifications

• H10P95/94

  Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma · CPC title

• H10W20/081

  by forming openings in the dielectric parts · CPC title

• H10W20/071

  of dielectric parts thereof · CPC title

• H10W42/00

  Arrangements for protection of devices (arrangements for thermal protection H10W40/00) · CPC title

• H10W20/47 Primary

  comprising two or more dielectric layers having different properties, e.g. different dielectric constants · CPC title