Method for producing an integrated circuit, integrated circuit, x-ray detector and x-ray device

Patent metadata

Field	Value
Publication number	US-10825729-B2
Application number	US-201916385069-A
Country	US
Kind code	B2
Filing date	Apr 16, 2019
Priority date	Apr 23, 2018
Publication date	Nov 3, 2020
Grant date	Nov 3, 2020

Abstract

A method is for producing an integrated circuit. In an embodiment, a metallic contact structure, for a through silicon via with a contact area, is applied onto a silicon substrate without an insulating intermediate layer. An interconnection structure, with at least one insulating layer and at least one interconnection layer, is applied onto the silicon substrate. The contact structure is or will be contacted with the interconnection layer or at least one of the possibly plurality of interconnection layers, and a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate.

First claim

What is claimed is:

1. A method for producing an integrated circuit, the method comprising:
applying a metallic contact structure, for a through silicon via with a contact area, onto a silicon substrate without an insulating intermediate layer;
applying an interconnection structure, with at least one insulating layer and at least one interconnection layer, onto the silicon substrate;
contacting the metallic contact structure with at least one of the at least one interconnection layer; and
introducing a diode structure, for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate, into the silicon substrate.

2. The method of claim 1 , wherein the contacting includes contacting the metallic contact structure on an outer area of the insulating layer, situated opposite the silicon substrate, with a test connection element.

3. The method of claim 2 , wherein the diode structure is configured such that a series connection of two diodes is created for blocking the current flow between the metallic contact structure and the silicon substrate.

4. The method of claim 3 , wherein the two diodes are oriented mirror-inverted with regard to a blocking direction.

5. The method of claim 1 , wherein the diode structure is configured such that a series connection of two diodes is created for blocking the current flow between the metallic contact structure and the silicon substrate.

6. The method of claim 5 , wherein the two diodes are oriented mirror-inverted with regard to a blocking direction.

7. The method of claim 1 , wherein the diode structure is created by at least one well being introduced into the silicon substrate.

8. The method of claim 7 , wherein the diode structure is created by a triple well being introduced into the silicon substrate.

9. The method of claim 1 , wherein the applying of the metallic contact structure includes applying the metallic contact structure onto the silicon substrate with a plurality of contact areas spaced apart from one another, and wherein for each contact area, a diode is introduced into the silicon substrate.

10. The method of claim 9 , wherein the diode structure is structured to form a tree-like distribution of diodes with a central diode toward the silicon substrate and a plurality of branch diodes linked to the central diode, each of the plurality of branch diodes being assigned to one of the plurality of contact areas.

11. The method of claim 1 , wherein a metallic contacting layer is introduced between a respective contact area of the metallic contact structure and the silicon substrate.

12. The method of claim 1 , wherein, for forming the through silicon via from a side of the silicon substrate facing away from the metallic contact structure, a channel is introduced such that the diode structure is penetrated as far as a respective contact area of the metallic contact structure.

13. The method of claim 1 , wherein a CMOS process technology is used.

14. An integrated circuit, comprising:
a silicon substrate;
a metallic contact structure, is applied with a contact area onto the silicon substrate, without an insulating intermediate layer;
a through silicon via, contacted at least in part with the contact area; and
an interconnection structure, applied onto the silicon substrate, including at least one insulating layer and at least one interconnection layer,

wherein the metallic contact structure is contacted with at least one of the at least one interconnection layer, and wherein a diode structure for blocking a current flow between the contact area of the metallic contact structure and the silicon substrate is introduced into the silicon substrate, the diode structure being penetrated by the through silicon via.

15. An X-ray detector, comprising:
a detection unit; and
an evaluation unit, including the integrated circuit of claim 14 .

16. An X-ray device, comprising:
the X-ray detector of claim 15 .

Assignees

• Siemens Healthcare Gmbh

Inventors

• Hosemann Michael
• Viehweger Kay

Classifications

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10P74/273

  Interconnections for measuring or testing, e.g. probe pads · CPC title

• H10W20/023 Primary

  the interconnections being through-semiconductor vias · CPC title