Refractory seed metal for electroplated mems structures
US-2017066645-A1 · Mar 9, 2017 · US
US10825628B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10825628-B2 |
| Application number | US-201715652181-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 17, 2017 |
| Priority date | Jul 17, 2017 |
| Publication date | Nov 3, 2020 |
| Grant date | Nov 3, 2020 |
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An microelectromechanical switch uses electrostatic attraction to draw a beam toward a contact and electromagnetic repulsion to disengage and repel the beam from the contact. The electrostatic attraction is generated by a gate electrode. The electromagnetic repulsion is generated between the beam and a magnetic coil positioned on the same side of the beam as the contact. The magnetic coil produces a magnetic field, which induces a current in the beam that repels the magnetic coil. The gate electrode and the magnetic coil may be co-planar or in different planes. A circuit may also operate a coil-shaped structure act as the gate electrode and the magnetic coil, depending on the configuration.
Opening claim text (preview).
What is claimed is: 1. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil surrounds the gate electrode. 2. The MEMS switch of claim 1 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 3. The MEMS switch of claim 1 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 4. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil is next to the gate electrode on the substrate. 5. The MEMS switch of claim 4 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 6. The MEMS switch of claim 4 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 7. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil is a multi-layer coil including conductive traces positioned at multiple levels of the substrate. 8. The MEMS switch of claim 7 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 9. The MEMS switch of claim 7 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 10. A method of controlling a MEMS switch, comprising: electrostatically attracting a microfabricated, cantilevered beam toward an underlying electrical contact using a gate electrode underlying the microfabricated, cantilevered beam; and magnetically repulsing the microfabricated, cantilevered beam from the underlying electrical contact by inducing a current in the beam by generating a first magnetic field with a coil positioned under the beam. 11. The method of claim 10 , further comprising alternately driving the coil and the gate electrode. 12. The method of claim 10 , further comprising conductively coupling a radio frequency signal to the microfabricated, cantilevered beam. 13. The method of claim 10 , wherein using the gate electrode and generating the first magnetic field with the coil comprise using a same coil-shaped structure electrically coupled in different configurations. 14. The method of claim 13 , wherein generating a first magnetic field with the coil comprises discharging a capacitor through the coil. 15. The method of claim 14 , further comprising charging the capacitor while using the gate electrode. 16. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil surrounds the gate electrode. 17. The MEMS switch of claim 15 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 18. The MEMS switch of claim 15 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 19. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil is next to the gate electrode on the substrate. 20. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil is a multi-layer coil including conductive traces positioned at multiple levels of the substrate.
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