Electromagnetically actuated microelectromechanical switch

US10825628B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10825628-B2
Application numberUS-201715652181-A
CountryUS
Kind codeB2
Filing dateJul 17, 2017
Priority dateJul 17, 2017
Publication dateNov 3, 2020
Grant dateNov 3, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

An microelectromechanical switch uses electrostatic attraction to draw a beam toward a contact and electromagnetic repulsion to disengage and repel the beam from the contact. The electrostatic attraction is generated by a gate electrode. The electromagnetic repulsion is generated between the beam and a magnetic coil positioned on the same side of the beam as the contact. The magnetic coil produces a magnetic field, which induces a current in the beam that repels the magnetic coil. The gate electrode and the magnetic coil may be co-planar or in different planes. A circuit may also operate a coil-shaped structure act as the gate electrode and the magnetic coil, depending on the configuration.

First claim

Opening claim text (preview).

What is claimed is: 1. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil surrounds the gate electrode. 2. The MEMS switch of claim 1 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 3. The MEMS switch of claim 1 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 4. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil is next to the gate electrode on the substrate. 5. The MEMS switch of claim 4 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 6. The MEMS switch of claim 4 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 7. A microelectromechanical systems (MEMS) switch, comprising: a cantilevered beam connected to an anchor and spaced from an underlying substrate, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil underlying the beam and having a center being offset, along the first direction, relative to the anchor, wherein the coil is a multi-layer coil including conductive traces positioned at multiple levels of the substrate. 8. The MEMS switch of claim 7 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 9. The MEMS switch of claim 7 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 10. A method of controlling a MEMS switch, comprising: electrostatically attracting a microfabricated, cantilevered beam toward an underlying electrical contact using a gate electrode underlying the microfabricated, cantilevered beam; and magnetically repulsing the microfabricated, cantilevered beam from the underlying electrical contact by inducing a current in the beam by generating a first magnetic field with a coil positioned under the beam. 11. The method of claim 10 , further comprising alternately driving the coil and the gate electrode. 12. The method of claim 10 , further comprising conductively coupling a radio frequency signal to the microfabricated, cantilevered beam. 13. The method of claim 10 , wherein using the gate electrode and generating the first magnetic field with the coil comprise using a same coil-shaped structure electrically coupled in different configurations. 14. The method of claim 13 , wherein generating a first magnetic field with the coil comprises discharging a capacitor through the coil. 15. The method of claim 14 , further comprising charging the capacitor while using the gate electrode. 16. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil surrounds the gate electrode. 17. The MEMS switch of claim 15 , further comprising a first source configured to drive the coil to produce a magnetic field and a second source configured to drive the gate electrode. 18. The MEMS switch of claim 15 , wherein the coil is formed of a conducting material with conductivity greater than 10,000 S/m. 19. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil is next to the gate electrode on the substrate. 20. A microelectromechanical systems (MEMS) switch, comprising: a substrate; a beam mounted to the substrate by an anchor, the beam extending away from the anchor at least in a first direction; a gate electrode disposed on the substrate and underlying the beam; and a coil disposed on the substrate and underlying the beam, the coil having a center being offset, along the first direction, relative to the anchor, wherein the coil is a multi-layer coil including conductive traces positioned at multiple levels of the substrate.

Assignees

Inventors

Classifications

  • making use of micromechanics · CPC title

  • Switches making use of microelectromechanical systems [MEMS] (for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009) · CPC title

  • H01H50/005Primary

    using micromechanics · CPC title

  • For holding or placing an element in a given position · CPC title

  • Special contact materials used for MEMS · CPC title

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What does patent US10825628B2 cover?
An microelectromechanical switch uses electrostatic attraction to draw a beam toward a contact and electromagnetic repulsion to disengage and repel the beam from the contact. The electrostatic attraction is generated by a gate electrode. The electromagnetic repulsion is generated between the beam and a magnetic coil positioned on the same side of the beam as the contact. The magnetic coil produ…
Who is the assignee on this patent?
Analog Devices Global Unlimited Co
What technology area does this patent fall under?
Primary CPC classification H01H59/0009. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).