Semiconductor device manufacturing method
US-2019051807-A1 · Feb 14, 2019 · US
US10821543B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10821543-B2 |
| Application number | US-201616075260-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 13, 2016 |
| Priority date | Mar 16, 2016 |
| Publication date | Nov 3, 2020 |
| Grant date | Nov 3, 2020 |
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Provided is a joint manufacturing method including: a step A of preparing a laminate in which two objects to be joined are temporarily adhered with a heat-joining sheet including a pre-sintering layer interposed between the two objects to be joined; a step B of increasing a temperature of the laminate from a temperature equal to or lower than a first temperature defined below to a second temperature; and a step C of holding the temperature of the laminate in a predetermined range after the step B, in which the laminate is pressurized during at least a part of the step B and at least a part of the step C. The first temperature is a temperature at which an organic component contained in the pre-sintering layer is decreased by 10% by weight when the pre-sintering layer is subjected to thermogravimetric measurement.
Opening claim text (preview).
The invention claimed is: 1. A joint manufacturing method comprising: a step A of preparing a laminate in which two objects to be joined are temporarily adhered with a heat-joining sheet including a pre-sintering layer interposed between the two objects to be joined; a step B of increasing a temperature of the laminate from a temperature equal to or lower than a first temperature defined below to a second temperature; and a step C of holding the temperature of the laminate in a predetermined range after the step B, wherein the laminate is pressurized during at least a part of the step B and during at least a part of the step C: the first temperature is a temperature at which an organic component contained in the pre-sintering layer is decreased by 10% by weight when the pre-sintering layer is subjected to thermogravimetric measurement; and when the step B and the step C are performed in air, the thermogravimetric measurement is performed in the air, and when the step B and the step C are performed in a nitrogen atmosphere, a reducing gas atmosphere or a vacuum atmosphere, the thermogravimetric measurement is performed in the nitrogen atmosphere. 2. The joint manufacturing method according to claim 1 , wherein the laminate is pressurized at 5 to 40 MPa. 3. The joint manufacturing method according to claim 1 , wherein the temperature held in the step C is in a range of 200° C. to 400° C. 4. The joint manufacturing method according to claim 1 , wherein the laminate is pressurized by a flip chip bonder or a parallel plate press.
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title
Compression bonding, e.g. thermocompression bonding · CPC title
Connecting techniques · CPC title
in solid form, e.g. by using a powder or by laminating a foil · CPC title
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