Magnetoresistance effect device and magnetoresistance effect module

Patent metadata

Field	Value
Publication number	US-10818990-B2
Application number	US-201916262354-A
Country	US
Kind code	B2
Filing date	Jan 30, 2019
Priority date	Feb 1, 2018
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

First claim

What is claimed is:

1. A magnetoresistance effect device comprising:
a first port:
a second port;
a first circuit unit and a second circuit unit which are connected in series between the first port and the second port;
a shared reference electric potential terminal which is connected to both of the first circuit unit and the second circuit unit, or a first reference electric potential terminal and a second reference electric potential terminal, each of which is connected to the first circuit unit and the second circuit unit, respectively; and
a shared DC application terminal configured to be capable of connecting a power supply for applying a DC current or a DC voltage to both of a first magnetoresistance effect element of the first circuit unit and a second magnetoresistance effect element of the second circuit unit, or a first DC application terminal and a second DC application terminal, each of which is configured to be capable of connecting a power supply for applying a DC current or a DC voltage to the first magnetoresistance effect element of the first circuit unit and the second magnetoresistance effect element of the second circuit unit, respectively,
wherein the first magnetoresistance effect element includes a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween,
wherein a first conductor of the first circuit unit is connected to one end of the first magnetoresistance effect element,
wherein the first conductor has a configuration in which a first end portion of the first conductor is connected to a high-frequency current input side and a second end portion of the first conductor is connected to the shared reference electric potential terminal or the first reference electric potential terminal so that a high-frequency current flows to branch to the first magnetoresistance effect element and the shared reference electric potential terminal or the first reference electric potential terminal,
wherein the second magnetoresistance effect element includes a magnetization fixed layer, a magnetization free layer, and a spacer layer interposed therebetween,
wherein a second conductor of the second circuit unit is connected to one end of the second magnetoresistance effect element, and
wherein the second conductor has a configuration in which a first end portion of the second conductor is connected to a second high-frequency current input side and a second end portion of the second conductor is connected to the shared reference electric potential terminal or the second reference electric potential terminal so that a high-frequency current flows to branch to the second magnetoresistance effect element and the shared reference electric potential terminal or the second reference electric potential terminal.

2. The magnetoresistance effect device according to claim 1 ,
wherein the second conductor and a facing electrode connected to an end portion facing the first conductor of the first magnetoresistance effect element are formed as a metal layer integrally.

3. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 2 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal of the magnetoresistance effect device, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal of the magnetoresistance effect device, respectively.

4. The magnetoresistance effect device according to claim 1 ,
wherein the first magnetoresistance effect element and the second magnetoresistance effect element are in a series connection relationship with reference to the shared DC application terminal.

5. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 4 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal of the magnetoresistance effect device, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal of the magnetoresistance effect device, respectively.

6. The magnetoresistance effect device according to claim 1 ,
wherein the first magnetoresistance effect element and the second magnetoresistance effect element are in a parallel connection relationship with reference to the shared DC application terminal.

7. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 6 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal of the magnetoresistance effect device, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal of the magnetoresistance effect device, respectively.

8. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 1 ; and
a shared DC current source or a shared DC voltage source which is connected to the shared DC application terminal of the magnetoresistance effect device, or a first DC current source or a first DC voltage source and a second DC current source or a second DC voltage source, each of which is connected to the first DC application terminal and the second DC application terminal of the magnetoresistance effect device, respectively.

Assignees

• Tdk Corp

Inventors

• Suzuki Tsuyoshi
• Hara Shinji

Classifications

• H10N59/00

  Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) · CPC title

• H01P1/218 Primary

  the ferromagnetic material acting as a frequency selective coupling element, e.g. YIG-filters · CPC title

• H03H2001/0057

  comprising magnetic material · CPC title

• H03H1/0007

  of radio frequency interference filters · CPC title

• H03H2001/0085

  Multilayer, e.g. LTCC, HTCC, green sheets · CPC title