Copper/ceramic joined body, insulated circuit board, method for producing copper/ceramic joined body, and method for producing insulated circuit board

Patent metadata

Field	Value
Publication number	US-10818585-B2
Application number	US-201816486266-A
Country	US
Kind code	B2
Filing date	Feb 27, 2018
Priority date	Feb 28, 2017
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

There is provided a copper/ceramic bonded body of the present invention in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other, in which an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member, a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and the active metal is present in the Mg solid solution layer.

First claim

The invention claimed is:

1. A copper/ceramic bonded body in which a copper member made of copper or a copper alloy and a ceramic member made of aluminum nitride or silicon nitride are bonded to each other,
wherein an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic member side between the copper member and the ceramic member,
a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper member, and
the active metal is present in the Mg solid solution layer.

2. The copper/ceramic bonded body according to claim 1 ,
wherein an intermetallic compound phase containing Cu and the active metal is dispersed in the Mg solid solution layer.

3. The copper/ceramic bonded body according to claim 1 ,
wherein Cu particles are dispersed in the active metal nitride layer.

4. The copper/ceramic bonded body according to claim 1 ,
wherein the active metal is Ti.

5. The copper/ceramic bonded body according to claim 1 ,
wherein, in a region from a bonding surface of the ceramic member to 50 μm toward the copper member side between the ceramic member and the copper member, an area ratio of a Cu 2 Mg phase is 15% or less.

6. An insulating circuit substrate in which a copper plate made of copper or a copper alloy is bonded to a surface of a ceramic substrate made of aluminum nitride or silicon nitride,
wherein an active metal nitride layer containing a nitride of one or more active metals selected from Ti, Zr, Nb, and Hf is formed on the ceramic substrate side between the copper plate and the ceramic substrate,
a Mg solid solution layer in which Mg is dissolved in a Cu matrix phase is formed between the active metal nitride layer and the copper plate, and
the active metal is present in the Mg solid solution layer.

7. The insulating circuit substrate according to claim 6 ,
wherein an intermetallic compound phase containing Cu and the active metal is dispersed in the Mg solid solution layer.

8. The insulating circuit substrate according to claim 6 ,
wherein Cu particles are dispersed in the active metal nitride layer.

9. The insulating circuit substrate according to claim 6 ,
wherein the active metal is Ti.

10. The insulating circuit substrate according to claim 6 ,
wherein, in a region from a bonding surface of the ceramic substrate to 50 μm toward the copper plate side between the ceramic substrate and the copper plate, an area ratio of a Cu 2 Mg phase is 15% or less.

11. The copper/ceramic bonded body according to claim 2 ,
wherein Cu particles are dispersed in the active metal nitride layer.

12. The copper/ceramic bonded body according to claim 2 ,
wherein the active metal is Ti.

13. The copper/ceramic bonded body according to claim 2 ,
wherein, in a region from a bonding surface of the ceramic member to 50 μm toward the copper member side between the ceramic member and the copper member, an area ratio of a Cu 2 Mg phase is 15% or less.

14. The insulating circuit substrate according to claim 7 ,
wherein Cu particles are dispersed in the active metal nitride layer.

15. The insulating circuit substrate according to claim 7 ,
wherein the active metal is Ti.

16. The insulating circuit substrate according to claim 7 ,
wherein, in a region from a bonding surface of the ceramic substrate to 50 μm toward the copper plate side between the ceramic substrate and the copper plate, an area ratio of a Cu 2 Mg phase is 15% or less.

17. A method for producing a copper/ceramic bonded body, for producing the copper/ceramic bonded body according to claim 1 , the method comprising:
an active metal and Mg disposing step of disposing one or more active metals selected from Ti, Zr, Nb, and Hf and Mg between the copper member and the ceramic member;
a laminating step of laminating the copper member and the ceramic member with the active metal and the Mg interposed therebetween; and
a bonding step of performing a heating treatment on the copper member and the ceramic member laminated with the active metal and the Mg interposed therebetween in a state of being pressed in a laminating direction under a vacuum atmosphere so as to bond the copper member and the ceramic member to each other,
wherein, in the active metal and Mg disposing step, an active metal amount is 0.4 μtmol/cm 2 or more and 47.0 μtmol/cm 2 or less, and a Mg amount is 7.0 μtmol/cm 2 or more and 143.2 μtmol/cm 2 or less.

18. The method for producing a copper/ceramic bonded body according to claim 17 ,
wherein a pressing load in the bonding step is 0.049 MPa or more and 3.4 MPa or less, and
a heating temperature in the bonding step is 500° C. or higher and 850° C. or lower in a case where Cu of the copper member and Mg are laminated in a contact state and is 670° C. or higher and 850° C. or lower in a case where the Cu and the Mg are laminated in a non-contact state.

19. A method for producing an insulating circuit substrate, for producing the insulating circuit substrate according to claim 6 , in which the copper plate made of copper or copper alloy is bonded to the surface of the ceramic substrate made of aluminum nitride or silicon nitride, the method comprising:
an active metal and Mg disposing step of disposing one or more active metals selected from Ti, Zr, Nb, and Hf and Mg between the copper plate and the ceramic substrate;
a laminating step of laminating the copper plate and the ceramic substrate with the active metal and the Mg interposed therebetween; and
a bonding step of performing a heating treatment on the copper plate and the ceramic substrate laminated with the active metal and the Mg interposed therebetween in a state of being pressed in a laminating direction under a vacuum atmosphere so as to bond the copper plate and the ceramic substrate to each other,
wherein, in the active metal and Mg disposing step, an active metal amount is 0.4 μtmol/cm 2 or more and 47.0 μtmol/cm 2 or less, and a Mg amount is 7.0 μtmol/cm 2 or more and 143.2 μtmol/cm 2 or less.

20. The method for producing an insulating circuit substrate according to claim 19 ,
wherein a pressing load in the bonding step is 0.049 MPa or more and 3.4 MPa or less,
a heating temperature in the bonding step is 500° C. or higher and 850° C. or lower in a case where Cu of the copper plate and Mg are laminated in a contact state and is 670° C. or higher and 850° C. or lower in a case where the Cu and the Mg are laminated in a non-contact state.

Assignees

• Mitsubishi Materials Corp

Inventors

• Terasaki Nobuyuki

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W70/66

  Conductive materials thereof · CPC title

• H10W40/255

  having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title

• H10W70/692

  Ceramics or glasses · CPC title

• H10W70/02 Primary

  of conductive package substrates serving as an interconnection, e.g. of metal plates (manufacture or treatment of leadframes H10W70/04) · CPC title