Shorting tolerant tunnel valve head and circuit

Patent metadata

Field	Value
Publication number	US-10818315-B2
Application number	US-201916243981-A
Country	US
Kind code	B2
Filing date	Jan 9, 2019
Priority date	Jan 24, 2017
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

An apparatus according to one embodiment includes a magnetic head having at least two tunneling magnetoresistance sensors, where a resistance of a tunnel barrier of each of the tunneling magnetoresistance sensors of the magnetic head is about 25 ohms or less, a drive mechanism for passing a magnetic medium over the magnetic head, and a controller electrically coupled to the magnetic head. In addition, the controller includes a biasing circuit, where the biasing circuit restricts a maximum voltage drop across the tunnel barrier.

First claim

What is claimed is:

1. An apparatus, comprising:
a magnetic head having at least two tunneling magnetoresistance sensors,
wherein a resistance of a tunnel barrier of each of the tunneling magnetoresistance sensors of the magnetic head is about 25 ohms or less;

a drive mechanism for passing a magnetic medium over the magnetic head; and
a controller electrically coupled to the magnetic head,
wherein the controller includes a biasing circuit, wherein the biasing circuit restricts a maximum voltage drop across the tunnel barrier.

2. An apparatus as recited in claim 1 , wherein the tunneling magnetoresistance sensors are present in the magnetic head in an array.

3. An apparatus as recited in claim 2 , wherein the array is linear.

4. An apparatus as recited in claim 2 , wherein each sensor is configured to read a unique data track, wherein the sensors are configured to concurrently read the data tracks.

5. An apparatus as recited in claim 1 , wherein a lower shield of each sensor is formed above a wafer substrate, wherein an insulating layer is positioned between the lower shield and the wafer substrate, wherein an average distance between the lower shield and the wafer substrate is less than about 100 nm.

6. An apparatus as recited in claim 5 , comprising an electrically conductive spacer between the tunnel barrier and at least one of the shields.

7. An apparatus as recited in claim 6 , wherein the electrically conductive spacer comprises iridium.

8. An apparatus as recited in claim 1 , comprising an upper layer above an upper shield of each sensor, wherein an insulating layer is positioned between the upper shield and the upper layer, wherein an average distance between the upper shield and the upper layer is less than about 100 nm.

9. An apparatus as recited in claim 8 , wherein the upper layer has a higher thermal conductivity than the upper shield.

10. An apparatus as recited in claim 9 , wherein the upper layer has a higher hardness than the upper shield.

11. An apparatus as recited in claim 1 , comprising a protective coating on a media facing side of each sensor, wherein at least some layers of each sensor are recessed from a plane of a media bearing surface, wherein an extent of the recession plus a thickness of the protective coating is greater than about 10 nm.

12. An apparatus as recited in claim 1 , wherein a stripe height of the tunnel barrier is at least ⅔ of a track width of the tunnel barrier or greater.

13. An apparatus as recited in claim 1 , wherein the magnetic head is a tape head.

14. An apparatus, comprising:
a magnetic head having at least two tunneling magnetoresistance sensors;
a drive mechanism for passing a magnetic medium over the magnetic head; and
a controller electrically coupled to the magnetic head,
wherein the controller includes a biasing circuit, wherein the biasing circuit sets a predetermined voltage value drop for each of the tunneling magnetoresistance sensors according to the following equation:

V
bias

=

2
⁢

R
bias

+

2
⁢

R
lead

+

R
sensor

R
sensor

×

V

sensor
,
target

,

wherein V bias is a voltage set by the biasing circuit, R bias is a resistance of the bias circuit, R lead is a resistance of a lead, R sensor is a resistance of the sensor, and V sensor,target is a target value of the predetermined voltage value drop of the respective sensor.

15. An apparatus as recited in claim 14 , wherein the tunneling magnetoresistance sensors are present in the magnetic head in an array.

16. An apparatus as recited in claim 15 , wherein the array is linear.

17. An apparatus as recited in claim 15 , wherein each sensor is configured to read a unique data track, wherein the sensors are configured to concurrently read the data tracks.

18. An apparatus as recited in claim 14 , wherein a stripe height of a tunnel barrier of each of the tunneling magnetoresistance sensors is at least ⅔ of a track width of the tunnel barrier or greater.

19. An apparatus as recited in claim 14 , wherein the magnetic head is a tape head.

20. An apparatus, comprising:
a magnetic head having at least two tunneling magnetoresistance sensors,
wherein a plurality of tunneling magnetoresistance sensors are present in the magnetic head in an array,
wherein a target resistance of each tunnel barrier of the tunneling magnetoresistance sensors is about 25 ohms or less,
wherein a stripe height of each tunnel barrier is at least ⅔ of a track width of each tunnel barrier or greater,
wherein each sensor is configured to read a unique data track,
wherein the sensors are configured to concurrently read the data tracks.

21. An apparatus as recited in claim 20 , wherein the array is linear.

22. An apparatus as recited in claim 20 , wherein the magnetic head is a tape head.

23. An apparatus as recited in claim 20 , further comprising:
a drive mechanism for passing a magnetic medium over the magnetic head; and
a controller electrically coupled to the magnetic head.

24. An apparatus as recited in claim 23 , where the controller includes a biasing circuit, wherein the biasing circuit sets a predetermined voltage value drop for each tunnel barrier.

25. An apparatus as recited in claim 23 , where the controller includes a biasing circuit, wherein the biasing circuit restricts a maximum voltage drop across each tunnel barrier.

Assignees

• IBM

Inventors

• Biskeborn Robert G
• Czarnecki W Stanley
• Liang Jason
• Lo Calvin S

Classifications

• G11B5/3912 Primary

  Arrangements in which the active read-out elements are transducing in association with active magnetic shields, e.g. magnetically coupled shields (G11B5/3916 takes precedence) · CPC title

• G11B5/397

  with a plurality of independent magnetoresistive active read-out elements for respectively transducing from selected components · CPC title

• G11B5/3909

  Arrangements using a magnetic tunnel junction · CPC title

• G11B5/3951

  the active elements being arranged on several parallel planes · CPC title

• G11B5/3932

  Magnetic biasing films · CPC title