Multi-stack graphene structure and device including the same

Patent metadata

Field	Value
Publication number	US-10816828-B2
Application number	US-201715802086-A
Country	US
Kind code	B2
Filing date	Nov 2, 2017
Priority date	Nov 2, 2016
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

A multi-stack graphene structure includes a graphene stack that includes graphene layers including amorphous graphene and thin film dielectric layers. The graphene layers include amorphous graphene. The graphene layers and the thin dielectric layers are alternately stacked on one another. The multi-stack graphene structure also includes an electric field former configured to apply an electric field to the graphene layers.

First claim

What is claimed is:

1. A multi-stack graphene structure comprising:
a plurality of graphene layers spaced apart from each other, each of the plurality of graphene layers comprising amorphous graphene;
a plurality of thin film dielectric layers respectively provided between each graphene layer of the plurality graphene layers; and
an electric field former configured to apply an electric field to each of the plurality of graphene layers.

2. The multi-stack graphene structure of claim 1 , wherein the amorphous graphene is an amorphous single carbon atomic layer.

3. The multi-stack graphene structure of claim 1 , wherein the plurality of thin film dielectric layers comprise at least one material selected from the group consisting of Al 2 O 3 , HfO 2 , SiO 2 , Si 3 N 4 , ZrO 2 , and Ta 2 O 5 .

4. The multi-stack graphene structure of claim 1 , wherein the amorphous graphene is present in a form of a pattern.

5. The multi-stack graphene structure of claim 4 , wherein the pattern is one of a one-dimensional (1D) pattern and a two-dimensional (2D) pattern.

6. The multi-stack graphene structure of claim 1 , wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm.

7. The multi-stack graphene structure of claim 1 , wherein the plurality of thin film dielectric layers are formed by using atomic layer deposition.

8. A device comprising the multi-stack graphene structure of claim 1 .

9. The device of claim 8 , further comprising:
a substrate; and
a gate oxide on the substrate,
wherein the multi-stack graphene structure is provided on the gate oxide.

10. The device of claim 9 , further comprising a reflecting layer provided between the substrate and the gate oxide.

11. The device of claim 9 , wherein the gate oxide and the plurality of thin film dielectric layers comprise a same material.

12. The device of claim 9 , wherein the gate oxide and the plurality of thin film dielectric layers comprise different materials.

13. The device of claim 8 , further comprising:
a substrate; and
a waveguide on the substrate,
wherein the multi-stack graphene structure is provided on an upper portion or a lower portion of the waveguide.

14. The device of claim 13 , further comprising a light source configured to emit light to one surface of the waveguide.

15. The device of claim 13 , further comprising a dielectric layer between the waveguide and the multi-stack graphene structure.

16. The device of claim 13 , further comprising a grating provided in at least one surface of the waveguide and configured to couple light to an inside of the waveguide or emit the light to an outside of the waveguide.

17. The multi-stack graphene structure of claim 1 , the plurality of graphene layers is 3 to 10 graphene layers.

18. The multi-stack graphene structure of claim 1 , the plurality of graphene layers is 7 to 10 graphene layers.

19. The multi-stack graphene structure of claim 17 , wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm.

20. The multi-stack graphene structure of claim 18 , wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm.

21. The multi-stack graphene structure of claim 18 , wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm, and each of the plurality of graphene layers has a thickness less than 1 nm.

22. The multi-stack graphene structure of claim 1 , wherein each of the plurality of thin film dielectric layers has a thickness less than 20 nm, and each of the plurality of graphene layers has a thickness less than 1 nm.

Assignees

• Samsung Electronics Co Ltd
• The Board Of Trustees Of The Leland Stanford Jr Univ

Inventors

• Joo Wonjae
• Kang Juhyung
• Kim Soojin
• Brongersma Mark L
• Fan Shanhui

Classifications

• G02F1/0155

  modulating the optical absorption · CPC title

• G02F1/17

  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 · CPC title

• G02F1/011

  in optical waveguides, not otherwise provided for in this subclass · CPC title

• G02F2202/10

  semiconductor · CPC title

• G02F1/19

  based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169 · CPC title