Waveguide intersections incorporating a waveguide crossing

US10816725B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10816725-B2
Application numberUS-201816134295-A
CountryUS
Kind codeB2
Filing dateSep 18, 2018
Priority dateSep 18, 2018
Publication dateOct 27, 2020
Grant dateOct 27, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion of the first waveguide. The overlapping portions of the first and third waveguides are configured to transfer optical signals between the first waveguide and the third waveguide.

First claim

Opening claim text (preview).

What is claimed is: 1. A structure comprising: a waveguide crossing including a first waveguide and a second waveguide oriented to intersect the first waveguide, the first waveguide extending lengthwise along a first longitudinal axis, the second waveguide extending lengthwise along a second longitudinal axis, and the second longitudinal axis oriented transverse to the first longitudinal axis such that the first waveguide and the second waveguide are oriented to orthogonally intersect with included right angles; and a third waveguide arranged in a vertical direction relative to the waveguide crossing, the third waveguide including a portion having an overlapping arrangement with a first portion of the first waveguide, wherein the first portion of the first waveguide includes a taper and a straight section, the third waveguide includes a taper and a straight section, the taper of the first waveguide is arranged to overlap with the straight section of the third waveguide, the taper of the third waveguide is arranged to overlap with the straight section of the first waveguide, the portion of the third waveguide and the first portion of the first waveguide are configured to transfer optical signals between the first waveguide and the third waveguide, the straight section of the first waveguide is arranged to terminate the first waveguide, the third waveguide is arranged in the vertical direction over the waveguide crossing, the waveguide crossing is comprised of a single-crystal semiconductor material, and the third waveguide is comprised of a dielectric material. 2. The structure of claim 1 wherein the single-crystal semiconductor material is single-crystal silicon, and the dielectric material is a nitride of silicon. 3. A structure comprising: a waveguide crossing including a first waveguide and a second waveguide oriented to intersect the first waveguide, the first waveguide extending lengthwise along a first longitudinal axis, the second waveguide extending lengthwise along a second longitudinal axis, and the second longitudinal axis oriented transverse to the first longitudinal axis such that the first waveguide and the second waveguide are oriented to orthogonally intersect with included right angles; and a third waveguide arranged in a vertical direction relative to the waveguide crossing, the third waveguide including a portion having an overlapping arrangement with a first portion of the first waveguide, wherein the first portion of the first waveguide includes a taper and a straight section, the third waveguide includes a taper and a straight section, the taper of the first waveguide is arranged to overlap with the straight section of the third waveguide, the taper of the third waveguide is arranged to overlap with the straight section of the first waveguide, the portion of the third waveguide and the first portion of the first waveguide are configured to transfer optical signals between the first waveguide and the third waveguide, the straight section of the first waveguide is arranged to terminate the first waveguide, the waveguide crossing is arranged in the vertical direction over the third waveguide, the waveguide crossing is comprised of a dielectric material, and the third waveguide is comprised of a single-crystal semiconductor material. 4. The structure of claim 3 wherein the dielectric material is nitride of silicon, and the single-crystal semiconductor material is single-crystal silicon.

Assignees

Inventors

Classifications

  • G02B6/1228Primary

    Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

  • Three-dimensional structures · CPC title

  • Bends, branchings or intersections · CPC title

  • Silicon · CPC title

  • Tapering · CPC title

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What does patent US10816725B2 cover?
Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion…
Who is the assignee on this patent?
Globalfoundries Inc
What technology area does this patent fall under?
Primary CPC classification G02B6/1228. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Oct 27 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).