Magnetic detection device and semiconductor integrated circuit for amplifying magnetic detection signal
US-11860245-B2 · Jan 2, 2024 · US
US10816614B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10816614-B2 |
| Application number | US-201716077497-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2017 |
| Priority date | Feb 14, 2016 |
| Publication date | Oct 27, 2020 |
| Grant date | Oct 27, 2020 |
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A magnetic field sensor system comprises an electrically conducting film of ferromagnetic nanoparticles printed directly on a supporting structure, and electrically conducting contacts coupled to the film for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current in a direction that is generally perpendicular to the current direction in the plane of the film.
Opening claim text (preview).
What is claimed is: 1. A magnetic field sensor system, comprising: an electrically conducting film of ferromagnetic nanoparticles, and electrically conducting contacts coupled to said film for injecting an electric current into the film; wherein the electrically conducting contacts are coupled to said film so as to allow measuring a voltage through a subset of the electrically conducting contacts, the voltage being generated across said film responsive to said injected current, wherein the electrically conducting film comprises individual ferromagnetic nanoparticles coated with a polymeric or molecular surfactant layer, wherein each of the ferromagnetic nanoparticles is formed of a single crystal having a diameter of 3 to 30 nm; and the electrically conducting film is sensitive to the Extraordinary Hall Effect. 2. A method of sensing, comprising injecting an electrical current via the electrically conducting contacts of the system of claim 1 , and measuring a voltage generated across said film responsively to said injected current. 3. A switching system, comprising the magnetic field sensor system of claim 1 . 4. A motion sensing system, comprising the magnetic field sensor system of claim 1 . 5. A rotation sensing system, comprising the magnetic field sensor system of claim 1 . 6. A printed circuit board, comprising the magnetic field sensor system of claim 1 . 7. The system according to claim 1 , wherein said ferromagnetic nanoparticles are printed directly on a supporting structure to form an aggregate of said ferromagnetic nanoparticles on said supporting structure. 8. The system according to claim 1 , wherein said film has measurable magnetic field sensitivity when a magnetic field of about 0.1 mT is applied. 9. The system according to claim 1 , wherein said electrically conducting contacts are printed. 10. The system according to claim 1 , wherein the resistivity of said film is at least 2 times larger than a characteristic bulk resistivity of a ferromagnetic material forming said nanop articles. 11. The system according to claim 1 , wherein a roughness of said film is smaller or of the same order of magnitude as a thickness of said film. 12. The system according to claim 11 , wherein a thickness of said film is at least 10 nm. 13. The system according to claim 1 , wherein said ferromagnetic material comprises at least one substance selected from the group consisting of nickel, cobalt and iron. 14. The system according to claim 1 , wherein said film has magnetic field sensitivity of at least 2m′Ω/T when a magnetic field up to a saturation point is applied. 15. The system according to claim 1 , wherein an Extraordinary Hall Effect resistance of the film at a saturating magnetic field, measured using currents in the range of from about 1 mA to about 10 mA, is between about 1 to about 10 mΩ. 16. The system according to claim 1 , wherein an Extraordinary Hall Effect resistance of the film decreases by no more than approximately 10% when the film is cooled from 300 K to 77 K. 17. A method of fabricating a magnetic field sensor, comprising: forming individual ferromagnetic nanoparticles coated with a polymeric or molecular surfactant layer, wherein each of the ferromagnetic nanoparticles is formed of a single crystal having a diameter of 3 to 30 nm; printing a film of said individual ferromagnetic nanoparticles directly on a supporting structure, and coupling electrically conducting contacts to said film so as to allow for injecting an electric current into the film and measuring a voltage generated across said film responsive to said injected current due to the Extraordinary Hall Effect. 18. The method as defined in claim 17 , wherein: the forming step comprises forming a dispersion of the ferromagnetic nanoparticles in ethylene glycol; and the printing step comprises depositing the dispersion onto the supporting structure, and drying the deposited dispersion under vacuum and with application of heat of about 100C, to thereby produce a conducting film. 19. The method as defined in claim 17 , wherein the ferromagnetic particles are formed from ferromagnetic material comprising at least one substance selected from a group consisting of nickel, cobalt, and iron, and the forming step comprises reducing the ferromagnetic material from a cationic state to a neutral state.
using multilayer structures, e.g. giant magnetoresistance sensors (thin magnetic films H01F10/00) · CPC title
Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance · CPC title
Hall effect devices · CPC title
Electricity · mapped topic
Hall-effect devices (integrated devices or assemblies of multiple devices H10N59/00) · CPC title
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