Passivation mixture and systems and methods for selectively passivating substrate materials including germanium or type III-IV materials using the passivation mixture

US10815573B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10815573-B2
Application numberUS-201715608416-A
CountryUS
Kind codeB2
Filing dateMay 30, 2017
Priority dateMay 30, 2017
Publication dateOct 27, 2020
Grant dateOct 27, 2020

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.

First claim

Opening claim text (preview).

What is claimed is: 1. A liquid passivation mixture for passivating an outer layer of a substrate, the liquid passivation mixture consisting of: a base, wherein the base is an amine selected from a group consisting of ethylenediamine, alkanolamine, diethylenetriamine, N-methylpyrrolidone, acetamide, tertiary amine, secondary amine, and primary amine; and a first material dissolved into the base, wherein the first material is selected from a group consisting of sulfur and selenium. 2. The liquid passivation mixture of claim 1 , further comprising water to dilute the liquid passivation mixture from 10 to 1000 times. 3. The liquid passivation mixture of claim 1 , wherein a concentration of sulfide ions is in a range between 0.0001 to 10 molar (M). 4. The liquid passivation mixture of claim 1 , wherein a concentration of sulfide ions is in a range between 1 and 10 M. 5. The liquid passivation mixture of claim 1 , wherein the liquid passivation mixture has a pH greater than 6. 6. The liquid passivation mixture of claim 1 , further comprising water to dilute the liquid passivation mixture from 10 to 1000 times. 7. The liquid passivation mixture of claim 1 , wherein a concentration of sulfide ions is in a range between 0.0001 to 10 molar (M). 8. The liquid passivation mixture of claim 1 , wherein a concentration of sulfide ions is in a range between 1 and 10 M. 9. The liquid passivation mixture of claim 1 , wherein the liquid passivation mixture has a pH greater than 6. 10. A liquid passivation mixture for passivating an outer layer of a substrate, the liquid passivation mixture consisting of: a base, wherein the base is a quaternary ammonium compound that includes tetra-alkyl ammonium hydroxide; and a first material dissolved into the base, wherein the first material is selected from a group consisting of sulfur and selenium. 11. A liquid passivation mixture for passivating an outer layer of a substrate, the liquid passivation mixture consisting of: a base, wherein the base is an amine selected from a group consisting of tetra-alkyl ammonium hydroxide, ethylenediamine, alkanolamine, diethylenetriamine, N-methylpyrrolidone, acetamide, tertiary amine, secondary amine, and primary amine; and a first material dissolved into the base, wherein the first material is selected from a group consisting of sulfur and selenium.

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Classifications

  • C23C22/73Primary

    characterised by the process · CPC title

  • using alkaline aqueous solutions with pH greater than 8 · CPC title

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What does patent US10815573B2 cover?
A liquid passivation mixture for passivating an outer layer of a substrate comprises a first material selected from group consisting of sulfur or selenium and a base selected from a group consisting of quaternary ammonium compound, sodium hydroxide (NaOH), potassium hydroxide (KOH), and amine.
Who is the assignee on this patent?
Lam Res Ag
What technology area does this patent fall under?
Primary CPC classification C23C22/73. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Oct 27 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).