Vapor phase deposition of organic films

Patent metadata

Field	Value
Publication number	US-10814349-B2
Application number	US-201916429750-A
Country	US
Kind code	B2
Filing date	Jun 3, 2019
Priority date	Oct 9, 2015
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

Methods and apparatus for vapor deposition of an organic film are configured to vaporize an organic reactant at a first temperature, transport the vapor to a reaction chamber housing a substrate, and maintain the substrate at a lower temperature than the vaporization temperature. Alternating contact of the substrate with the organic reactant and a second reactant in a sequential deposition sequence can result in bottom-up filling of voids and trenches with organic film in a manner otherwise difficult to achieve. Deposition reactors conducive to depositing organic films are provided.

First claim

What is claimed is:

1. An apparatus for organic film deposition, comprising:
a vessel configured for vaporizing a first reactant to form a first reactant vapor;
a reaction space configured to accommodate a semiconductor substrate comprising a topography with a three-dimensional structure and in selective fluid communication with the vessel; and
a control system configured to:
vaporize the first reactant in the vessel;
transport the first reactant vapor from the vessel to the semiconductor substrate;
expose the semiconductor substrate to the first reactant vapor in the reaction space; and
control deposition conditions in the reaction space such that exposing the semiconductor substrate to the first reactant vapor deposits an organic film over the semiconductor substrate preferentially over lower features of the topography compared to higher features of the topography such that the organic film reduces an aspect ratio of the three-dimensional structure on the semiconductor substrate as the organic film deposits.

2. The apparatus of claim 1 , wherein the control system is further configured to vaporize the first reactant at a temperature A of the vessel and maintain the semiconductor substrate at a temperature B of the deposition conditions, such that a ratio of temperature A to temperature B in Kelvin is between about 1 and about 1.15.

3. The apparatus of claim 2 , wherein the temperature B is between about 5° C. and about 50° C. lower than the temperature A.

4. The apparatus of claim 1 , wherein the deposition conditions include exposing the semiconductor substrate to a second reactant vapor to react with species of the first reactant vapor on the semiconductor substrate.

5. The apparatus of claim 4 , wherein the control system is further configured to expose the semiconductor substrate to the first reactant vapor and expose the semiconductor substrate to the second reactant vapor by alternately and sequentially repeatedly exposing the semiconductor substrate to the first reactant vapor and the second reactant vapor.

6. The apparatus of claim 4 , wherein the second reactant vapor comprises a diamine.

7. The apparatus of claim 6 , wherein the diamine comprises 1,6-diaminohexane (DAH).

8. The apparatus of claim 1 , wherein the control system is further configured to control a vaporization temperature A of the vessel and a semiconductor substrate temperature B of the deposition conditions, such that B<A.

9. The apparatus of claim 8 , wherein the control system is further configured to in situ clean a gas line and/or reaction space with an oxygen-containing reactant.

10. The apparatus of claim 8 , wherein the deposition conditions deposit a polymer film.

11. The apparatus of claim 8 , wherein the deposition conditions deposit a polyamic acid film.

12. The apparatus of claim 11 , wherein the control system is further configured to convert the polyamic acid film to a polyimide film.

13. The apparatus of claim 11 , wherein the polyamic acid film mostly comprises polyamic acid.

14. The apparatus of claim 1 , wherein the first reactant is an organic reactant, and wherein the control system is further configured to feed the first reactant vapor though a heated gas line extending through a side of a reactor defining the reaction space, to a gas distribution block overlying the semiconductor substrate within the reaction space.

15. The apparatus of claim 14 , wherein the gas distribution block comprises an outlet to an exhaust and a valve for controlling exhaust from the gas distribution block for purging.

16. The apparatus of claim 14 , wherein the control system is further configured to control a vaporization temperature A of the vessel, a semiconductor substrate temperature B of the deposition conditions, a gas line temperature C and a gas distribution block temperature D, such that B<A<C<D.

17. The apparatus of claim 16 , wherein the gas distribution block maintains separate flow paths for the first reactant vapor and a second reactant vapor until reaching the reaction space.

18. The apparatus of claim 16 , wherein the gas distribution block comprises a common plenum through which the first reactant vapor and a second reactant vapor are fed.

19. The apparatus of claim 1 , wherein the first reactant comprises a dianhydride.

20. The apparatus of claim 19 , wherein the dianhydride comprises pyromellitic dianhydride (PMDA).

21. The apparatus of claim 1 , wherein the control system is further configured to expose the semiconductor substrate to the first reactant vapor while maintaining the semiconductor substrate at a temperature below 130° C.

22. The apparatus of claim 1 , wherein the control system is further configured to expose the semiconductor substrate to the first reactant vapor while maintaining the semiconductor substrate at a temperature between about 100° C. and about 150° C.

Assignees

• Asm Ip Holding Bv

Inventors

• Pore Viljami J
• Tuominen Marko
• Huotari Hannu

Classifications

• H10P72/00

  Handling or holding of wafers, substrates or devices during manufacture or treatment thereof · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6334

  using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329) · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title