Quantum-dot-based avalanche photodiodes on silicon

Patent metadata

Field	Value
Publication number	US-10811549-B2
Application number	US-201916260256-A
Country	US
Kind code	B2
Filing date	Jan 29, 2019
Priority date	Jan 29, 2019
Publication date	Oct 20, 2020
Grant date	Oct 20, 2020

Abstract

A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.

First claim

The invention claimed is:

1. A quantum-dot based avalanche photodiode (QD-APD), comprising:
a waveguide to receive light;
a quantum dot (QD) stack of layers formed on top of the waveguide and deployed in a middle of a semiconductor p-n junction to receive light from the waveguide and generate an electric current with greater than one hundred percent (100%) internal quantum efficiency when the semiconductor p-n junction is reverse-biased; and
a mode converter to couple the light received by the waveguide to the QD stack of layers.

2. The QD-APD of claim 1 , further comprising a P-cladding layer and an N-cladding layer enclosing the QD stack of layers on a top and a bottom of the QD stack of layers.

3. The QD-APD of claim 1 , wherein the waveguide comprises a passive silicon waveguide.

4. The QD-APD of claim 1 , wherein the QD stack of layers comprises at least one QD light absorption layer and at least one spacer layer.

5. The QD-APD of claim 4 , wherein the QD light absorption layer comprises at least one of InAs (Indium-Arsenide), GaAs (Gallium-Arsenide), and InP (Indium-Phosphorus).

6. The QD-APD of claim 1 , wherein the mode converter comprises a section of the QD-APD wherein a portion of the waveguide tapers to a narrower width in a first direction and a portion of the QD stack of layers tapers down to a narrower width in a second direction opposite the first direction.

7. The QD-APD of claim 1 , wherein the QD stack of layers receives light from the waveguide via an optical evanescent coupling.

8. A quantum-dot based avalanche photodiode (QD-APD), comprising:
a waveguide to receive light;
a quantum dot (QD) stack of layers formed on top of the waveguide and including:
a plurality of QD light absorption layers within a semiconductor p-n junction to absorb light, the plurality of QD light absorption layers separated by spacer layers, and
a charge multiplication layer (CML) to multiply electrical charges with greater than one hundred percent (100%) internal quantum efficiency in response to the light absorbed when the semiconductor p-n junction is reverse-biased.

9. The QD-APD of claim 8 , further comprising an N-cladding or a P-Cladding adjacent to the CML.

10. The QD-APD of claim 8 , wherein the light absorbed by the plurality of QD light absorption layers is directed from the waveguide to the plurality of QD light absorption layers by a mode converter.

11. The QD-APD of claim 10 , wherein the mode converter includes a tapered region of the waveguide and a sloped region of the QD stack of layers.

12. The QD-APD of claim 11 , wherein a width of the QD stack of layers is larger than a width of any portion of the waveguide.

13. The QD-APD of claim 8 , wherein the CML multiplies electrical charges with greater than one hundred percent (100%) quantum efficiency during operation in avalanche mode.

14. The QD-APD device of claim 8 , wherein the waveguide receives light via a demultiplexing ring waveguide tuned to a particular wavelength.

15. A quantum-dot based avalanche photodiode (QD-APD), comprising:
a waveguide to receive light;
a quantum dot (QD) stack of layers formed on top of the waveguide and including:
a plurality of QD and charge multiplication layers (QD-CML) within a semiconductor p-n junction, the plurality of QD-CML to absorb light and to multiply electrical charges with greater than one hundred percent (100%) quantum efficiency in response to the light absorbed when the p-n junction is reverse-biased, and
a plurality of spacer layers to separate the plurality of the combined QD-CML.

16. The QD-APD of claim 15 , further comprising an N-metal contact coupled with an N-cladding adjacent to a first end of the QD stack of layers and a P-metal contact coupled with a P-cladding adjacent to a second end of the QD stack of layers.

17. The QD-APD of claim 15 , wherein a mode converter, including portions of both the waveguide and the QD stack of layers, divides the QD-APD into three distinct sections including a waveguide section, a mode converter section, and a QD section.

18. The QD-APD of claim 17 , wherein a width of the waveguide tapers down to a narrower width creating a narrowed waveguide at the mode converter section, and the QD stack widens to a wider width creating a widened QD stack section at the mode converter section.

19. The QD-APD of claim 18 , wherein an optical mode profile changes in each of the three distinct sections when light flows from the waveguide section toward the QD section.

20. The QD-APD of claim 19 , wherein the optical mode profile of the QD section spatially moves from the narrowed waveguide and expands in the widened QD stack section.

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Kurczveil Geza
• Liang Di
• Tossoun Bassem
• Zhang Chong
• Zeng Xiaoge
• Huang Zhihong
• Beausoleil Raymond

Classifications

• H10F77/413

  directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42) · CPC title

• H10F77/124

  comprising only Group III-V materials, e.g. GaAs · CPC title

• H10F30/225

  the potential barrier working in avalanche mode, e.g. avalanche photodiodes · CPC title

• H10F30/2255

  in which the active layers form heterostructures, e.g. SAM structures · CPC title

• H10F77/1433 Primary

  Quantum dots · CPC title