Methods and Systems for Coherent Imaging and Feedback Control for Modification of Materials
US-2018297117-A1 · Oct 18, 2018 · US
US10798949B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10798949-B2 |
| Application number | US-201515319901-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 2, 2015 |
| Priority date | Jun 27, 2014 |
| Publication date | Oct 13, 2020 |
| Grant date | Oct 13, 2020 |
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The present invention provides a wafer product decorating apparatus comprising a laser, a collimator, at least one galvanometer driven mirror, and an aspheric scan lens, the apparatus being positionable relative to the wafer product to be decorated wherein the apparatus is configured to provide a laser beam having a spot size of from 100 to 750 μm in diameter on the surface of the product to be decorated and a substantially flat focal plane, characterised in that the focal plane has a depth of field of from 5 mm to 20 mm and that the focal plane of the laser beam is from 5 mm to 30 mm above or below the surface of the product to be decorated. The invention also provides a process for decorating a wafer product.
Opening claim text (preview).
The invention claimed is: 1. A wafer product decorating apparatus comprising a laser ( 6 ), a collimator ( 7 ), at least one galvanometer driven mirror ( 8 ), and an aspheric scan lens ( 9 ), the apparatus being positionable relative to the wafer product to be decorated wherein the apparatus is configured to provide a laser beam having a spot size of from 100 to 750 μm in diameter on the surface of the product to be decorated and a substantially flat focal plane, characterised in that the focal plane has a depth of field of from 5 mm to 20 mm and that the focal plane of the laser beam is from 5 mm to 30 mm above or below the surface of the product to be decorated, wherein the wafer product is a cone. 2. An apparatus according to claim 1 wherein the laser is a CO2 laser. 3. An apparatus according to claim 1 wherein the spot size is from 150 μm to 700 μm in diameter. 4. An apparatus according to any of claim 1 wherein the spot size is from 250 μm to 600 μm in diameter. 5. An apparatus according to claim 1 wherein the focal plane of the laser beam is from 7.5 mm to 27.5 mm above the surface of the wafer-based product that is to be decorated. 6. An apparatus according to claim 1 wherein the focal plane of the laser beam is from 7.5 mm to 27.5 mm below the surface of the wafer-based product that is to be decorated. 7. An apparatus according to claim 1 wherein the depth of field of the focal plane is from 5.5 mm to 17.5 mm.
Decorating sweetmeats or confectionery · CPC title
Apparatus for decorating sweetmeats or confectionery · CPC title
Wafers (filled wafers A21D13/36) · CPC title
Decorated or decorative products · CPC title
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