Silicon-based anode active material and preparation method therefor

Patent metadata

Field	Value
Publication number	US-10797303-B2
Application number	US-201615561171-A
Country	US
Kind code	B2
Filing date	Mar 25, 2016
Priority date	Mar 26, 2015
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

The present invention relates to a silicon-based anode active material and a method of fabricating the same. The silicon-based anode active material according to an embodiment of the present invention comprises: particles comprising silicon and oxygen combined with the silicon, wherein a carbon-based conductive layer is coated with on outermost surface of the particles; and phosphorus doped in the particles, wherein a content of the phosphorus with respect to a total weight of the particles and the phosphorus doped in the particles have a range of 0.01 wt % to 15 wt %, and a content of the oxygen has a range of 9.5 wt % to 25 wt %.

First claim

The invention claimed is:

1. A silicon based anode active material comprising:
primary particles comprising silicon and oxygen combined with the silicon, wherein the primary particles comprise a core of the silicon and a shell of silicon oxide on the core of the silicon, wherein phosphorous is doped in the primary particles, wherein at least a part of the shell of the silicon oxide comprises phosphorous silicate, and wherein the primary particles have sizes within a range of from about 10 nm to 300 nm; and
secondary particles formed of aggregates of the primary particles, wherein the primary particles are electrically connected by a carbon based conductive layer on the shell of silicon oxide;
wherein a content of the phosphorus with respect to a total weight of the secondary particles and the phosphorus doped in the primary particles has a range from 0.01 wt % to 15 wt %, and a content of the oxygen with respect to a total weight of the secondary particles has a range from 9.5 wt % to 25 wt %.

2. The silicon based anode active material of claim 1 , wherein the content of the phosphorus with respect to the total weight of the particles and the phosphorus doped in the primary particles have a range from 0.01 wt % to 5 wt %.

3. The silicon based anode active material of claim 1 , wherein a content of the carbon-based conductive layer with respect to the total weight of the secondary particles and the phosphorus doped in the primary particles have a range from 4.5 wt % to 32 wt %.

4. The silicon-based anode active material of claim 1 , wherein a thickness of the phosphorous silicate have a range from 3 nm to 15 nm.

5. The silicon based anode active material of claim 1 , wherein the phosphorus is doped in the core of the silicon.

6. The silicon based anode active material of claim 1 , wherein the cores of the silicon with the shells of silicon oxide are obtained by pulverizing a slurry of silicon particles in a liquid solvent containing oxygen to cause chemical oxidation of the silicon particles.

Assignees

• Nexeon Ltd

Inventors

• Cho Young Tai
• Choi Yong Gil
• Park Seung Chul
• Park Seon
• Seo Hee Young
• Park Jee Hye
• Lee Yong Eui
• Kim Chul Hwan

Classifications

• H01M4/5805

  Phosphides · CPC title

• H01M4/625

  Carbon or graphite · CPC title

• H01M4/386 Primary

  Silicon or alloys based on silicon · CPC title

• H01M4/134 Primary

  Electrodes based on metals, Si or alloys · CPC title

• H01M4/366 Primary

  as layered products · CPC title