Piezoelectric PTZT film, and process for producing liquid composition for forming said piezoelectric film

Patent metadata

Field	Value
Publication number	US-10797219-B2
Application number	US-201615549797-A
Country	US
Kind code	B2
Filing date	Feb 15, 2016
Priority date	Feb 16, 2015
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A piezoelectric PTZT film is formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti, in which the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass. In a process for producing a liquid composition for forming a piezoelectric film, a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol are refluxed, a Ti alkoxide is added into a first synthesis solution obtained by the refluxing, and then refluxing is performed again, a Pb compound is added into a second synthesis solution obtained by performing the additional refluxing, and then refluxing is performed again, a solvent is removed from a third synthesis solution obtained by performing the additional refluxing, and then, dilution with alcohol is performed, to produce the liquid composition for forming a piezoelectric PTZT film.

First claim

The invention claimed is:

1. A piezoelectric PTZT film, formed of a metal oxide having a perovskite structure including Pb, Ta, Zr, and Ti,
wherein the metal oxide further includes carbon, and a content of the carbon is 80 to 800 ppm by mass,
a fraction of Ta atoms with respect to total metal atoms of Zr atoms and Ti atoms is in a range of 0<Ta≤0.04.

2. A process for producing a liquid composition for forming a piezoelectric PTZT film, the method comprising:
a step of preparing a first synthesis solution by refluxing a Ta alkoxide, a Zr alkoxide, β-diketones, and a diol to allow the Ta alkoxide and the Zr alkoxide to react with the diol;
a step of preparing a second synthesis solution by adding a Ti alkoxide to the first synthesis solution to allow the refluxing and the reaction again;
a step of preparing a third synthesis solution by adding a Pb compound to the second synthesis solution to further allow the refluxing and the reaction; and
a step of producing a liquid composition for forming a piezoelectric PTZT film which is a fourth synthesis solution by removing a solvent from the third synthesis solution and diluting the solution with alcohol,
wherein, when the total amount of the Ta alkoxide, the Zr alkoxide, and the Ti alkoxide is set as 1 mole, the liquid composition for forming a piezoelectric PTZT film includes the diol and the β-diketones with fractions so that the content of diol is 7 to 11 moles and the content of β-diketones is 1.5 to 3.0 moles.

3. The process for forming a piezoelectric PTZT film comprising:
a step of forming a PTZT precursor film by applying the liquid composition for forming a piezoelectric PTZT film produced by the process according to claim 2 on an orientation-controlled film of a substrate and drying the liquid composition;
a step of calcinating the PTZT precursor film; and
a step of sintering the PTZT precursor film which is calcinated.

4. An electronic component comprising the piezoelectric PTZT film according to claim 1 .

Assignees

• Mitsubishi Materials Corp

Inventors

• Doi Toshihiro
• Soyama Nobuyuki

Classifications

• H10N30/8554 Primary

  Lead-zirconium titanate [PZT] based · CPC title

• H10N30/097

  by sintering · CPC title

• H10N30/079

  using intermediate layers, e.g. for growth control · CPC title

• H10N30/078

  by sol-gel deposition · CPC title

• C04B35/499

  containing also titanates · CPC title