Method for producing a bolometric detector

Patent metadata

Field	Value
Publication number	US-10797103-B2
Application number	US-201815968863-A
Country	US
Kind code	B2
Filing date	May 2, 2018
Priority date	May 9, 2017
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A method for producing a bolometric detector comprising producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; and elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

First claim

The invention claimed is:

1. A method for producing a bolometric detector comprising at least:
producing a stack of layers on an electrical interconnect level of an electronic read-out circuit of the detector, the stack comprising at least one sacrificial layer positioned between a carrier layer and a first etch stop layer, the first etch stop layer being positioned between the sacrificial layer and said electrical interconnect level, and the sacrificial layer comprising at least one mineral material capable of being selectively etched relative to the carrier layer and the first etch stop layer;
forming an opening in the stack of layers including etching through the carrier layer to expose an electrically conducting portion of the electrical interconnect level of said electrical interconnect level connected to the electronic read-out circuit;
producing at least one electrically conducting via in the opening passing through at least the stack of layers such that at least one electrically conducting material of the via is in contact with at least one electrically conducting portion of said electrical interconnect level connected to the electronic read-out circuit;
depositing at least one electrically conducting layer onto the carrier layer and the via;
etching the electrically conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by at least one remaining portion of the electrically conducting layer that covers at least one upper part of the via; and
eliminating the sacrificial layer by chemical etching to which the first etch stop layer and the carrier layer are resistant, and such that the membrane is suspended by means of the via.

2. The method according to claim 1 , wherein the stack of layers further comprises a second etch stop layer such that the carrier layer is positioned between the second etch stop layer and the sacrificial layer, the method further comprising, between the production of the via and the deposition of the electrically conducting layer, the implementation of the following steps of:
removing a layer of electrically conducting material formed on the second etch stop layer during production of the via, then
eliminating the second etch stop layer,
and wherein the electrically conducting layer is deposited such that the remaining portion of the electrically conducting layer also covers the sides of the upper part of the via uncovered by the elimination of the second etch stop layer.

3. The method according to claim 1 , wherein the carrier layer comprises at least one dielectric material or a material wherefor at least one electric parameter varies according to the temperature thereof.

4. The method according to claim 1 , further comprising, before the elimination of the sacrificial layer, the production of at least one element for absorbing the infrared radiation intended to be detected by the detector, on the membrane.

5. The method according to claim 4 , wherein the absorbing element comprises at least one MIM structure.

6. The method according to claim 1 , wherein the electrically conducting layer is etched such that a plurality of remaining portions of said electrically conducting layer form bolometer electrodes and resistive portions capable of absorbing infrared radiation intended to be detected by the detector.

7. The method according to claim 1 , further comprising, between the etching of the electrically conducting layer and the etching of the carrier layer, the deposition of a first thermoelectric signal transduction layer on the remaining portions of the electrically conducting layer and on the carrier layer.

8. The method according to claim 7 , wherein the first thermoelectric signal transduction layer comprises at least one material that is resistant to the chemical etching process implemented to eliminate the sacrificial layer.

9. The method according to claim 7 , further comprising, after the deposition of the first thermoelectric signal transduction layer, the deposition of a second thermoelectric signal transduction layer on the first thermoelectric signal transduction layer, the thickness of which is greater than that of the first thermoelectric signal transduction layer.

10. The method according to claim 1 , wherein:
the carrier layer comprises amorphous silicon, and/or
if a first thermoelectric signal transduction layer is deposited, the first thermoelectric signal transduction layer comprises amorphous silicon, and/or
if a second thermoelectric signal transduction layer is deposited, the second thermoelectric signal transduction layer comprises amorphous silicon.

11. The method according to claim 1 , comprising forming the bolometer membrane directly connected to the via.

12. The method according to claim 1 , wherein producing the at least one electrically conductive via comprises depositing at least one electrically conductive material into the opening passing through at least the stack of layers to reach the at least one electrically conducting portion to form at least one electrically conducting via electrically connected to the electrical interconnect level.

Assignees

• Commissariat Energie Atomique

Inventors

• Leduc Patrick
• Cortial Sebastien
• Pocas Stephane
• Yon Jean-Jacques

Classifications

• G01J5/024 Primary

  Special manufacturing steps or sacrificial layers or layer structures · CPC title

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• G01J5/12 Primary

  using thermoelectric elements, e.g. thermocouples · CPC title

• H01L37/025

  Electricity · mapped topic

• H01L27/16 Primary

  Electricity · mapped topic