Model for estimating stochastic variation

Patent metadata

Field	Value
Publication number	US-10795267-B2
Application number	US-201716462569-A
Country	US
Kind code	B2
Filing date	Nov 17, 2017
Priority date	Dec 2, 2016
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

A method including: obtaining a resist process dose sensitivity value for a patterning process; applying the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of resist process dose sensitivity to obtain a value of the stochastic variable; and designing or modifying a parameter of the patterning process based on the stochastic variable value.

First claim

The invention claimed is:

1. A method comprising:
obtaining a resist process dose sensitivity value for a patterning process;
applying, by a hardware computer, the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of a resist process dose sensitivity independent variable to obtain a value of the stochastic variable; and
designing or modifying a parameter of the patterning process based on the stochastic variable value.

2. The method of claim 1 , wherein the function of resist process dose sensitivity comprises:
[ a ·(DS) b ]

where DS is resist process dose sensitivity and a and b are fitted coefficients.

3. The method of claim 1 , wherein the stochastic variable comprises feature edge or width roughness.

4. The method of claim 1 , wherein the stochastic model provides values of the stochastic variable as function of a resist quencher parameter.

5. The method of claim 4 , wherein the resist quencher parameter is resist quencher flux and the function of resist quencher flux comprises:
(1− c·Q flux)

wherein Qflux is resist quencher flux and c is a fitted coefficient.

6. The method of claim 1 , further comprising creating a stochastic process variability band, based on the stochastic variable value, with respect to a pattern edge position, or producing a stochastic pattern edge by multiplying the stochastic variable value with a unit noise vector.

7. The method of claim 6 , comprising creating the stochastic process variability band, based on the stochastic variable value, with respect to the pattern edge position, wherein the pattern edge position is an average edge position obtained from a lithographic model.

8. The method of claim 1 , wherein obtaining the resist process dose sensitivity value comprises using a lithographic model of the patterning process to compute the resist process dose sensitivity value based on a device pattern.

9. The method of claim 1 , further comprising:
obtaining predictions of resist process dose sensitivity from a lithographic model of the patterning process;
obtaining measured values of the stochastic variable; and
calibrating the stochastic model based on the predicted resist process dose sensitivities and the measured values of the stochastic variable.

10. The method of claim 9 , comprising obtaining resist quencher flux values and calibrating the stochastic model based on resist quencher flux values.

11. The method of claim 1 , wherein values of the stochastic variable are dependent on a geometric dimension of a space between features of a pattern used in the patterning process.

12. A method comprising:
obtaining resist quencher parameter values for a patterning process;
obtaining measured values of a stochastic variable of the patterning process; and
calibrating, by a hardware computer, a model predicting a value of the stochastic variable as a function of a resist quencher parameter variable, based on the resist quencher parameter values and the measured values of the stochastic variable.

13. The method of claim 12 , wherein the resist quencher parameter is resist quencher flux.

14. The method of claim 13 , wherein the model comprises a function of resist quencher flux, which function comprises:
(1 −c·Q flux)
wherein Qflux is resist quencher flux and c is a fitted coefficient.

15. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtain resist quencher parameter values for a patterning process;
obtain measured values of a stochastic variable of the patterning process; and
calibrate a model predicting a value of the stochastic variable as a function of a resist quencher parameter variable, based on the resist quencher parameter values and the measured values of the stochastic variable.

16. A computer program product comprising a non-transitory computer-readable medium having instructions therein, the instructions, upon execution by a computer system, configured to cause the computer system to at least:
obtain a resist process dose sensitivity value for a patterning process;
apply the resist process dose sensitivity value to a stochastic model providing values of a stochastic variable as a function of a resist process dose sensitivity independent variable to obtain a value of the stochastic variable; and
design or modify a parameter of the patterning process based on the stochastic variable value.

17. The computer program product of claim 16 , wherein the function of resist process dose sensitivity comprises:
[ a ·(DS) b ]

where DS is resist process dose sensitivity and a and b are fitted coefficients.

18. The computer program product of claim 16 , wherein the stochastic model provides values of the stochastic variable as function of a resist quencher parameter.

19. The computer program product of claim 16 , wherein the instructions are further configured to cause the computer system to create a stochastic process variability band, based on the stochastic variable value, with respect to a pattern edge position, or produce a stochastic pattern edge by multiplying the stochastic variable value with a unit noise vector.

20. The computer program product of claim 16 , wherein the instructions configured to obtaining the resist process dose sensitivity value are further configured to use a lithographic model of the patterning process to compute the resist process dose sensitivity value based on a device pattern.

Assignees

• Asml Netherlands Bv

Inventors

• Hansen Steven George

Classifications

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title

• G03F7/70608

  Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist · CPC title

• G03F7/70508

  Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus · CPC title

• G03F7/705 Primary

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F7/70558

  Dose control, i.e. achievement of a desired dose · CPC title