Electrode and method for making an electrode
US-2015168336-A1 · Jun 18, 2015 · US
US10794851B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10794851-B2 |
| Application number | US-201715817969-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 20, 2017 |
| Priority date | Nov 30, 2016 |
| Publication date | Oct 6, 2020 |
| Grant date | Oct 6, 2020 |
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An electrode may include a substrate, a first layer and a second layer. The first layer may include an inorganic material. The first layer may further be disposed between the substrate and the second layer. The second layer may include ruthenium. The second layer may further have a hexagonal compact crystalline structure.
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What is claimed is: 1. An electrode comprising: a substrate; a first layer comprising an inorganic material; and a second layer comprising ruthenium, wherein the second layer has a hexagonal compact crystalline structure, wherein the first layer is disposed between the substrate and the second layer, and wherein the inorganic material of the first layer has a shorter lattice parameter a 1 and the ruthenium of the second layer has a shorter lattice parameter a 2 , where a 1 and a 2 satisfy the following formula: 5/6*(a 1 /a 2 )=x, where x represents a value of at least about 0.98 and not greater than about 1.02. 2. The electrode of claim 1 , wherein the second layer has a sheet resistance of at least about 2.0 Ohm/sq. 3. The electrode of claim 1 , wherein the inorganic material comprises a crystalline material or a polycrystalline material. 4. The electrode of claim 1 , wherein the inorganic material comprises an oxide, a metal oxide, a transparent oxide, a transparent metal oxide, a dielectric compound and any combination thereof. 5. The electrode of claim 1 , wherein the inorganic material comprises zinc oxide, indium oxide, tin oxide, cadmium oxide and any combination thereof. 6. The electrode of claim 1 , wherein the inorganic material comprises aluminum zinc oxide (AZO), indium tin oxide (ITO), antimony tin oxide (ATO), fluorine tin oxide (FTO) and any combination thereof. 7. The electrode of claim 1 , wherein the inorganic material comprises aluminum zinc oxide (AZO). 8. The electrode of claim 1 , wherein the first layer does not contain tin oxide. 9. The electrode of claim 1 , wherein the first layer does not contain carbon. 10. The electrode of claim 1 , wherein the first layer has a thickness of not greater than about 20 nm and at least about 1 nm. 11. The electrode of claim 1 , wherein the second layer comprises a crystalline material and a polycrystalline material. 12. The electrode of claim 1 , wherein the second layer has a thickness of at least about 10 nm and not greater than about 150 nm. 13. An electrode comprising: a substrate; and a first layer comprising an inorganic material having a shorter lattice parameter a 1 ; and a second layer comprising a ruthenium having a shorter lattice parameter a 2 , wherein a 1 and a 2 satisfy the following formula: 5/6*(a 1 /a 2 )=x, where x represents a value of at least about 0.98 and not greater than about 1.02. 14. The electrode of claim 13 , wherein the second layer has a sheet resistance of at least about 2.0 Ohm/sq. 15. The electrode of claim 13 , wherein the inorganic material comprises a crystalline material or a polycrystalline material. 16. The electrode of claim 13 , wherein the inorganic material comprises an oxide, a metal oxide, a transparent oxide, a transparent metal oxide, a dielectric compound and any combination thereof. 17. The electrode of claim 13 , wherein the inorganic material comprises zinc oxide, indium oxide, tin oxide, cadmium oxide and any combination thereof. 18. The electrode of claim 13 , wherein the inorganic material comprises aluminum zinc oxide (AZO), indium tin oxide (ITO), antimony tin oxide (ATO), fluorine tin oxide (FTO) and any combination thereof.
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