Optical detection sensor

Patent metadata

Field	Value
Publication number	US-10794759-B2
Application number	US-201916418453-A
Country	US
Kind code	B2
Filing date	May 21, 2019
Priority date	Jul 5, 2018
Publication date	Oct 6, 2020
Grant date	Oct 6, 2020

Abstract

An optical detection sensor is disclosed. The optical detection sensor includes a converter configured to receive non-visible light, convert the non-visible light into visible light, and emit the visible light; and a visible light solid-state image sensor. The converter is located on a light incident side of the visible light solid-state image sensor, and the visible light solid-state image sensor is configured to receive the visible light to generate an electron flow, convert information of the electron flow into data information, and output the data information.

First claim

What is claimed is:

1. An optical detection sensor, comprising:
a converter configured to receive non-visible light, convert the non-visible light into visible light, and emit the visible light; and
a visible light solid-state image sensor,
wherein the converter is located on a light incident side of the visible light solid-state image sensor, and the visible light solid-state image sensor is configured to receive the visible light to generate an electron flow, convert information of the electron flow into data information, and output the data information,
the converter comprises an organic light emitting layer, an anode, and a cathode; the anode and the cathode are respectively located on both sides of the organic light emitting layer, the anode is configured to absorb photons of the non-visible light and generate photo-generated carriers injected into the organic light emitting layer, and
the anode comprises a heterojunction photo transistor including an emitter, a base and a collector which are sequentially stacked, the collector is located on a side of the base and the emitter close to the photodiode, and the collector is configured to inject the photo-generated carriers into the organic light emitting layer, so that the organic light emitting layer emits the visible light.

2. The optical detection sensor according to claim 1 , wherein the visible light solid-state image sensor comprises a photodiode, a thin film transistor, and a read out integrated circuit;
the converter is located on a light incident side of the photodiode, and the photodiode is configured to absorb the visible light emitted by the converter and generate the electron flow;
the thin film transistor is connected with the photodiode and configured to receive the electron flow in the photodiode; and
the read out integrated circuit is connected with the thin film transistor and configured to read the information of the electron flow from the thin film transistor, convert the information of the electron flow into the data information, and output the data information.

3. The optical detection sensor according to claim 2 , wherein the photodiode is a PIN photodiode.

4. The optical detection sensor according to claim 2 , wherein the visible light solid-state image sensor further comprises a control line and a data line, the control line is connected with a gate electrode of the thin film transistor to turn on/off the thin film transistor, the data line is connected with one of a source electrode and a drain electrode of the thin film transistor to receive the electron flow of the photodiode, and the other one of the source electrode and the drain electrode of the thin film transistor is connected with the photodiode.

5. The optical detection sensor according to claim 4 , wherein the read out integrated circuit comprises an analog-to-digital converter, and the read out integrated circuit is configured to read a charge change amount on the data line, convert the charge change amount into a low voltage differential signal by the analog-to-digital converter, and output the low voltage differential signal.

6. The optical detection sensor according to claim 2 , wherein the visible light solid-state image sensor further comprises a light shielding layer located on a side of the thin film transistor facing the converter to prevent the visible light from irradiating the thin film transistor.

7. The optical detection sensor according to claim 1 , wherein the anode further comprises a metal electrode layer on a side of the heterojunction photo transistor facing the organic light emitting layer.

8. The optical detection sensor according to claim 1 , wherein the emitter of the heterojunction photo transistor comprises p-type indium phosphide, the base of the heterojunction photo transistor comprises n-type indium gallium arsenide, and the collector of the heterojunction photo transistor comprises p-type indium gallium arsenide.

9. The optical detection sensor according to claim 1 , wherein the visible light solid-state image sensor comprises a charge coupled device or a complementary metal-oxide-semiconductor image sensor.

10. The optical detection sensor according to claim 1 , wherein the non-visible light received by the converter comprises infrared light.

11. The optical detection sensor according to claim 1 , wherein the visible light converted by the converter comprises green light.

Assignees

• Fuzhou Boe Optoelectronics Tech Co Ltd
• Boe Technology Group Co Ltd

Inventors

• Cheng Hao
• Chi Yanfei
• Chen Xi
• Yao Zhixiao
• Li Zongxiang
• Liao Jiamin
• Tao Wenchang
• Wu Zhendian
• Li Dahai
• Lin Linlin
• Hong Guichun
• Liu Yao
• Liu Zuwen
• Wang Jin
• Qiu Xinmao
• Shi Changhong
• Lv Yaochao
• Zhuang Zihua
• Zhou Min
• Huang Yawen

Classifications

• H04N25/79

  Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors · CPC title

• H04N25/20

  for transforming only infrared radiation into image signals · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F39/182

  Colour image sensors · CPC title

• H10F39/016 Primary

  of thin-film-based image sensors · CPC title