Metal-insulator metal structure and method of forming the same
US-2020013852-A1 · Jan 9, 2020 · US
US10790434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10790434-B2 |
| Application number | US-201715831630-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 5, 2017 |
| Priority date | Dec 7, 2016 |
| Publication date | Sep 29, 2020 |
| Grant date | Sep 29, 2020 |
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A piezoelectric thin film-stacked body is provided. A piezoelectric thin film-stacked body has a first electrode layer, a first oxide layer stacked on the first electrode layer, a second oxide layer stacked on the first oxide layer, and a piezoelectric thin film stacked on the second oxide layer, the electrical resistivity of the first oxide layer is higher than the electrical resistivity of the second oxide layer, the first oxide layer includes K, Na, and Nb, and the piezoelectric thin film includes (K,Na)NbO 3 .
Opening claim text (preview).
What is claimed is: 1. A piezoelectric thin film-stacked body, comprising: a first electrode layer; a first oxide layer stacked on the first electrode layer; a second oxide layer stacked on the first oxide layer; and a piezoelectric thin film stacked on the second oxide layer, wherein an electrical resistivity of the first oxide layer is higher than an electrical resistivity of the second oxide layer, the first oxide layer includes K, Na and Nb, and the piezoelectric thin film includes (K,Na)NbO 3 . 2. The piezoelectric thin film-stacked body according to claim 1 , wherein an electrical resistivity of the piezoelectric thin film-stacked body is 1.0×10 11 to 1.0×10 14 Ωcm. 3. The piezoelectric thin film-stacked body according to claim 1 , wherein a ratio T 1 /T P of a thickness T 1 of the first oxide layer to a thickness T P of the piezoelectric thin film is 0.0010 to 0.0150. 4. A piezoelectric thin film substrate, including: the piezoelectric thin film-stacked body according to claims 1 ; and a substrate, wherein the first electrode layer is located between the substrate and the first oxide layer. 5. A piezoelectric thin film device, including: the piezoelectric thin film-stacked body according to claims 1 ; and a second electrode layer, wherein the first oxide layer, the second oxide layer, and the piezoelectric thin film are located between the first electrode layer and the second electrode layer. 6. A piezoelectric actuator, comprising: the piezoelectric thin film device according to claim 5 . 7. A piezoelectric sensor, comprising: the piezoelectric thin film device according to claim 5 . 8. A head assembly, comprising: the piezoelectric actuator according to claim 6 . 9. A head stack assembly, comprising: the head assembly according to claim 8 . 10. A hard disk drive, comprising: the head stack assembly according to claim 9 . 11. A printer head, comprising: the piezoelectric actuator according to claim 6 . 12. An ink-jet printer device, comprising: the printer head according to claim 11 .
Track finding or aligning by moving the head {; Provisions for maintaining alignment of the head relative to the track during transducing operation, i.e. track following (characterised by the track access method G11B21/08)} · CPC title
Specific materials used · CPC title
of film type, deformed by bending and disposed on a diaphragm · CPC title
Piezoelectric devices between head and arm, e.g. for fine adjustment · CPC title
Structure of print heads with piezoelectric elements · CPC title
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