Light emitting diode fabrication method

Patent metadata

Field	Value
Publication number	US-10790418-B2
Application number	US-201414588395-A
Country	US
Kind code	B2
Filing date	Dec 31, 2014
Priority date	Nov 23, 2012
Publication date	Sep 29, 2020
Grant date	Sep 29, 2020

Abstract

A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

First claim

The invention claimed is:

1. A fabrication method for a light-emitting diode (LED), comprising:
Step 1) selecting a screen printing template and coating a protection layer over a surface of the screen printing template;
Step 2) mounting an LED chip on a substrate;
Step 3) mounting the screen printing template on the LED chip and covering a front surface and side surfaces of the LED chip with the protection layer;
Step 4) printing a phosphor over the protection layer of the LED chip via a screen printing process by pushing the phosphor with a squeegee blade, to thereby form a remote-phosphor configuration such that heat dissipation and phosphor efficiency are improved resulting from the surface of the LED chip not directly in contact with the phosphor, wherein the phosphor is located only on the front surface of protection layer; and
Step 5) baking the phosphor for curing and separating the LED chip from the screen printing template,
wherein the Step 4) comprises:
mixing the phosphor with a gel into a phosphor gel;
evenly coating the phosphor gel over the protection layer via the screen printing template; and
recycling excess phosphor;
wherein a material of the protection layer is same with a material of the gel such that accidentally-scraped down material of the protection layer mixed with the gel does not cause contamination to the excess phosphor being recycled and
wherein the Step 5) comprises baking the phosphor for curing, coating the cured phosphor over the protection layer that is over the surface of the chip, and separating the chip from the substrate.

2. The fabrication method of claim 1 , wherein a thickness of the protection layer is about 1 - 5000 μm.

3. The fabrication method of claim 1 , wherein the Step 5) further comprises removing the screen printing template.

4. A fabrication method for a light-emitting diode (LED), comprising:
Step 1) mounting a LED chip on a substrate;
Step 2) mounting a screen printing template on the LED chip;
Step 3) coating a protection layer over surface of the screen printing template and a surface of the LED chip;
Step 4) printing a phosphor over the protection layer the LED chip via a screen printing process by pushing the phosphor with a squeegee blade, and recycling excess phosphor, to thereby form a remote-phosphor configuration such that heat dissipation and phosphor efficiency are improved resulting from the surface of the LED chip not directly in contact with the phosphor, wherein the phosphor is located only on the front surface of protection layer; and
Step 5) baking the phosphor for curing and separating the LED chip from the screen printing template,
the method further comprising adjusting patterns on the screen printing template to thereby adjust white light composition and color temperature from the resulting LED chip;
wherein the protective layer is composed of a material selected such that the material accidentally scraped down and mixed with the phosphor does not substantially affect a luminous efficiency and a luminance of the LED to be fabricated.

5. The fabrication method of claim 4 , wherein the Step 4) comprises:
mixing the phosphor with a gel into a phosphor gel;
evenly coating the phosphor gel on the protection layer that is over a front surface and side surfaces of light-emitting layer of the LED chip via the screen printing template.

6. The fabrication method of claim 5 , wherein a thickness of the protection layer in Step 3) is about 1 - 5000 μm.

7. The fabrication method of claim 4 , wherein the Step 5) further comprises removing the screen printing template.

8. The fabrication method of claim 4 , wherein the screen printing template is a steel plate.

9. The fabrication method of claim 4 , wherein the screen printing template is a ceramic plate.

Assignees

• Xiamen Sanan Optoelectronics Technology Co Ltd

Inventors

• Huang Yi-Jui
• Lin Kechuang
• Lin Suhui
• Zhuo Jiali

Classifications

• H10H20/0362

  of encapsulations · CPC title

• H10H20/0361

  of wavelength conversion means · CPC title

• H10H20/853

  characterised by their shape · CPC title

• H10H20/851 Primary

  Wavelength conversion means · CPC title

• H10H20/8515 Primary

  not being in contact with the bodies · CPC title