Integrated Coupling Of Scintillation Crystal With Photomultiplier In A Detector Apparatus
US-2015014544-A1 · Jan 15, 2015 · US
US10790129B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10790129-B2 |
| Application number | US-201816634693-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 14, 2018 |
| Priority date | Aug 4, 2017 |
| Publication date | Sep 29, 2020 |
| Grant date | Sep 29, 2020 |
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A transmissive photocathode includes a light transmitting substrate that has a first surface on which light is incident and a second surface which emits light incident from a side of the first surface, a photoelectric conversion layer that is provided on the second surface side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons, a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene, and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity. A thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene.
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The invention claimed is: 1. A transmissive photocathode comprising: a light transmitting substrate that has a first surface on which light is incident and a second surface which emits the light incident from a side of the first surface; a photoelectric conversion layer that is provided on a light emission side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons; a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene; and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity, wherein a thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene. 2. The transmissive photocathode according to claim 1 , wherein the thermal expansion coefficient of the thermal stress alleviation layer is within a range of 0.0×10 −6 /K to 10.0×10 −6 /K. 3. The transmissive photocathode according to claim 1 , wherein the thermal stress alleviation layer is composed of oxide or fluoride. 4. The transmissive photocathode according to claim 1 , wherein the thermal stress alleviation layer is composed of aluminum oxide, hafnium oxide, chromium oxide, gallium oxide, silicon oxide, or magnesium fluoride. 5. The transmissive photocathode according to claim 1 , wherein the light transmitting substrate is formed of an UV ray transmitting material. 6. The transmissive photocathode according to claim 1 , wherein the photoelectric conversion layer is constituted by including antimony or tellurium and an alkali metal. 7. An electron tube comprising: the transmissive photocathode according to claim 1 .
Photo-emissive cathodes · CPC title
Photo-emissive cathodes (H01J1/35 takes precedence) · CPC title
having photo- emissive cathode, e.g. alkaline photoelectric cell (operating with secondary emission H01J43/00) · CPC title
Cathode arrangements (construction of photo cathodes H01J40/06, H01J40/16, H01J47/00, H01J49/08) · CPC title
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