Semiconductor laser with waveguide flanked by conductive layers

Patent metadata

Field	Value
Publication number	US-10784648-B2
Application number	US-201716485425-A
Country	US
Kind code	B2
Filing date	May 29, 2017
Priority date	May 29, 2017
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

A semiconductor device according to the present invention includes a substrate, a semiconductor laser that is provided on an upper surface of the substrate and emits laser light, a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light and an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.

First claim

The invention claimed is:

1. A semiconductor device comprising:
a substrate;
a semiconductor laser that is provided on an upper surface of the substrate and emits laser light;
a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light; and
an embedment layer provided on the upper surface of the substrate and surrounding the semiconductor laser and the waveguide, wherein
on both sides of an end part, of the waveguide, which is connected to the semiconductor laser, an exposed part is provided in which the substrate is exposed from the embedment layer by the embedment layer separated in a waveguide direction of the waveguide, and
in the end part, a separation region is provided in which the first conductive layer is separated in the waveguide direction.

2. The semiconductor device according to claim 1 , wherein in the substrate, a groove greater in width in a direction perpendicular to the waveguide direction than the waveguide is provided right below the separation region.

3. The semiconductor device according to claim 1 , wherein
an etching stop layer is provided on the upper surface side of the substrate, and
the etching stop layer is exposed from the embedment layer in the exposed part.

4. The semiconductor device according to claim 1 , wherein the waveguide is surrounded by a protective insulating film in sectional view in the separation region.

5. The semiconductor device according to claim 1 , comprising polyimide for filling a gap between the waveguide layer and the substrate in the separation region.

6. A method for manufacturing a semiconductor device comprising:
a step of forming a semiconductor laser that emits laser light on an upper surface of a substrate;
a step of forming a waveguide having a first conductive layer provided on the upper surface of the substrate, and a waveguide layer that is provided on the first conductive layer and guides the laser light;
a step of forming an embedment layer surrounding the semiconductor laser and the waveguide on the upper surface of the substrate;
a step of removing a part of the embedment layer on both sides of an end part, of the waveguide, connected to the semiconductor laser such that the embedment layer is separated in a waveguide direction of the waveguide to form an exposed part in which the substrate is exposed from the embedment layer;
a step of covering the semiconductor laser, the waveguide, the embedment layer and the exposed part with an insulating film;
an opening forming step of providing a plurality of openings on both sides of the waveguide in the insulating film to expose the exposed part; and
an etching step of performing wet etching using etching liquid having a higher etching rate for the first conductive layer than the waveguide layer with the insulating film being as a mask to remove a part of the first conductive layer in the end part, and providing a separation region in which the first conductive layer is separated in the waveguide direction in the end part.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein
the etching liquid has a higher etching rate for the substrate than the waveguide layer, and
in the etching step, a groove greater in width in a direction perpendicular to the waveguide direction than the waveguide is provided in the substrate right below the separation region.

8. The method for manufacturing a semiconductor device according to claim 6 , wherein
an etching stop layer is provided on the upper surface side of the substrate,
in the opening forming step, the plurality of openings are provided so as to expose the etching stop layer and the first conductive layer, and
the etching liquid has a higher etching rate for the first conductive layer than the etching stop layer.

9. The method for manufacturing a semiconductor device according to claim 6 , comprising a step of forming a protective insulating film by a CVD film forming method such that the waveguide is surrounded by the protective insulating film in sectional view in the separation region.

10. The method for manufacturing a semiconductor device according to claim 6 , comprising a step of filling a gap between the waveguide layer and the substrate with polyimide in the separation region.

Assignees

• Mitsubishi Electric Corp

Inventors

• Kawasaki Kazushige

Classifications

• H01S5/323

  in AIIIBV compounds, e.g. AlGaAs-laser, {InP-based laser} · CPC title

• H01S5/026 Primary

  Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) · CPC title

• H10W20/071

  of dielectric parts thereof · CPC title

• H10W20/074

  of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers · CPC title

• H10P50/283

  by chemical means · CPC title