Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
US-2024234132-A1 · Jul 11, 2024 · US
US10784455B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10784455-B2 |
| Application number | US-201815871560-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 15, 2018 |
| Priority date | Aug 8, 2012 |
| Publication date | Sep 22, 2020 |
| Grant date | Sep 22, 2020 |
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A barrier film including a substrate, a base (co)polymer layer applied on a major surface of the substrate, an oxide layer applied on the base (co)polymer layer, and a protective (co)polymer layer applied on the oxide layer. The protective (co)polymer layer is formed as the reaction product of a first (meth)acryloyl compound and a (meth)acryl-silane compound derived from a Michael reaction between a second (meth)acryloyl compound and an aminosilane. The first and second (meth)acryloyl compounds may be the same. In some embodiments, a multiplicity of alternating layers of the oxide layer and the protective (co)polymer layer may be used. An oxide layer can be applied over the top protective (co)polymer layer. The barrier films provide, in some embodiments, enhanced resistance to moisture and improved peel strength adhesion of the protective (co)polymer layer(s) to the underlying layers. A process of making, and methods of using the barrier film are also described.
Opening claim text (preview).
The invention claimed is: 1. A barrier film, comprising: a substrate; a base (co)polymer layer on a major surface of the substrate; an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, wherein the protective (co)polymer layer comprises a (co)polymer consisting of a reaction product of only: tricyclodecanedimethanol di(meth)acrylate with a (meth)acryl-silane compound having the formula: wherein the (meth)acryl-silane compound is derived from a Michael reaction between 3-(acryloxy)-2-hydroxyl-propyl(meth)acrylate and N-methyl-aminopropyl trimethoxysilane. 2. The barrier film of claim 1 , further comprising a plurality of alternating layers of the oxide layer and the protective (co)polymer layer on the base (co)polymer layer. 3. The barrier film of claim 1 , wherein the substrate comprises a flexible transparent polymeric film, optionally wherein the substrate comprises polyethylene terephthalate (PET), polyethylene napthalate (PEN), heat stabilized PET, heat stabilized PEN, polyoxymethylene, polyvinylnaphthalene, polyetheretherketone, a fluoropolymer, polycarbonate, polymethyl(meth)acrylate, poly α-methyl styrene, polysulfone, polyphenylene oxide, polyetherimide, polyethersulfone, polyamideimide, polyimide, polyphthalamide, or combinations thereof. 4. The barrier film of claim 1 , wherein the base (co)polymer layer comprises a (meth)acrylate smoothing layer. 5. The barrier film of claim 1 , wherein the oxide layer comprises oxides, nitrides, carbides or borides of atomic elements from Groups IIA, IIIA, IVA, VA, VIA, VIIA, IB, or IIB, metals of Groups IIIB, IVB, or VB, rare-earth metals, or combinations thereof. 6. The barrier film of claim 1 , further comprising an oxide layer applied to the protective (co)polymer layer, optionally wherein the oxide layer comprises silicon aluminum oxide. 7. An article incorporating a barrier film according to claim 1 , wherein the article is selected from a photovoltaic device, a display device, a solid state lighting device, and combinations thereof. 8. A process for making a barrier film, comprising: (a) applying a base (co)polymer layer to a major surface of a substrate; (b) applying an oxide layer on the base (co)polymer layer; and (c) depositing on the oxide layer a protective (co)polymer layer comprising a (co)polymer consisting of a reaction product of only tricyclodecanedimethanol di(meth)acrylate with a (meth)acryl-silane compound having the formula: wherein the (meth)acryl-silane compound is derived from a Michael reaction between 3-(acryloxy)-2-hydroxyl-propyl(meth)acrylate and N-methyl-aminopropyl trimethoxysilane. 9. The process of claim 8 , wherein step (a) comprises: (i) evaporating a base (co)polymer precursor; (ii) condensing the evaporated base (co)polymer precursor onto the substrate; and (iii) curing the evaporated base (co)polymer precursor to form the base (co)polymer layer. 10. The process of claim 8 , wherein step (b) comprises depositing an oxide onto the base (co)polymer layer to form the oxide layer, wherein depositing is achieved using sputter deposition, reactive sputtering, chemical vapor deposition, or a combination thereof. 11. The process of claim 8 , wherein step (b) comprises applying a layer of an inorganic silicon aluminum oxide to the base (co)polymer layer. 12. The process of claim 8 , further comprising sequentially repeating steps (b) and (c) to form a plurality of alternating layers of the protective (co)polymer layer and the oxide layer on the base (co)polymer layer. 13. The process of claim 8 , wherein step (c) further comprises at least one of co-evaporating the tricyclodecanedimethanol di(meth)acrylate with the (meth)acryl-silane compound from a liquid mixture, or sequentially evaporating the tricyclodecanedimethanol di(meth)acrylate and the (meth)acryl-silane compound from separate liquid sources, optionally wherein the liquid mixture comprises no more than about 10 wt. % of the (meth)acryl-silane compound. 14. The process of claim 8 , wherein step (c) further comprises at least one of co-condensing the tricyclodecanedimethanol di(meth)acrylate and the (meth)acryl-silane compound onto the oxide layer, or sequentially condensing the tricyclodecanedimethanol di(meth)acrylate and the (meth)acryl-silane compound on the oxide layer. 15. The process of claim 8 , wherein reacting the tricyclodecanedimethanol di(meth)acrylate with the (meth)acryl-silane compound to form the protective (co)polymer layer on the oxide layer occurs at least in part on the oxide layer. 16. The process of claim 8 , further comprising applying an oxide layer to the top protective (co)polymer layer, optionally wherein the oxide layer comprises at least one of silicon aluminum oxide or indium tin oxide.
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