Silicon carbide semiconductor device and manufacturing method therefor

Patent metadata

Field	Value
Publication number	US-10784335-B2
Application number	US-201716305164-A
Country	US
Kind code	B2
Filing date	Jun 29, 2017
Priority date	Jul 5, 2016
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

A top end of the p type connection layer is connected to the p type extension region. By forming such a p type extension region, it becomes possible to eliminate a region where an interval becomes large between the p type connection layer and the p type guard ring. Therefore, in the mesa portion, it is possible to prevent the equipotential line from excessively rising up, and it is possible to secure the withstand voltage.

First claim

The invention claimed is:

1. A silicon carbide semiconductor device having a cell portion and an outer peripheral portion that includes a guard ring portion surrounding an outer periphery of the cell portion and a connection portion positioned between the guard ring portion and the cell portion, the semiconductor device comprising:
a substrate having a first conductivity type or a second conductivity type; and
a drift layer having the first conductivity type, arranged on a surface of the substrate, and having an impurity concentration lower than the substrate, wherein:
the cell portion, or the cell portion and the connection portion includes a second conductivity type layer that is arranged in a plurality of line-shaped first trenches having a stripe shape and disposed in the drift layer, and is made of an epitaxial film having the second conductivity type;
the cell portion includes a vertical type semiconductor element that has: a first electrode electrically connected to the second conductivity type layer; and a second electrode arranged on a back side of the substrate, and flows a current between the first electrode and the second electrode;
the guard ring portion includes a second conductivity type ring that is arranged in a plurality of line-shaped second trenches having a stripe shape, disposed from a surface of the drift layer, and surrounding the cell portion, and is made of an epitaxial film having a second conductivity type; and
a top end of the second conductivity type layer includes an extension region made of an epitaxial film having the second conductivity type and arranged in an extension trench that is connected to a tip of each of the plurality of first trenches, protrudes only in a direction toward an adjacent second conductivity type layer among a plurality of second conductivity type layers, is arranged to be spaced apart from the adjacent second conductivity type layer, and has a line shape.

2. The silicon carbide semiconductor device according to claim 1 , wherein:
the second conductivity type ring has an arc shape portion; and
the extension region is arranged at the top end of the second conductivity type layer at a position corresponding to the arc shape portion of the second conductivity type ring.

3. The silicon carbide semiconductor device according to claim 2 , wherein:
the extension region has an arc shape that is the same as the arc shape of the second conductivity type ring.

4. The silicon carbide semiconductor device according to claim 1 , wherein:
a top end of the extension region in a longitudinal direction has an upper surface with a semicircular shape when viewed from an upside of the substrate.

5. The silicon carbide semiconductor device according to claim 1 , wherein:
a closest distance from a top end of the extension region in the longitudinal direction to the second conductivity type ring is equal to or smaller than twice an elongation amount of a depletion layer extending from the extension region to the drift layer when the semiconductor element turns off.

6. The silicon carbide semiconductor device according to claim 1 , wherein:
at least a part of the second conductivity type ring, which is disposed on an outer peripheral side of the cell portion, is defined as the guard ring portion;
in a thickness direction of the substrate, the cell portion and the connection portion protrude from the guard ring portion to provide a mesa portion having an island shape; and
in an entire region of the mesa portion, a closest distance between the second conductivity type layer and the extension region or the second conductivity type ring is equal to or less than an interval between a plurality of deep layers of the cell portion.

7. The silicon carbide semiconductor device according to claim 6 , further comprising:
an extraction electrode that is electrically connected to a first part of the second conductivity type layer and a second part of the second conductivity type layer located at the connection portion, and extracts a carrier at a time of breakdown.

8. The silicon carbide semiconductor device according to claim 7 , wherein:
an interval between the first and second parts of the second conductivity type layer is larger than the interval between the second conductivity type layers arranged in the cell portion, the first and second parts being electrically connected to the extraction electrode.

9. The silicon carbide semiconductor device according to claim 1 , wherein:
the vertical type semiconductor element of the cell portion has:
a base region having the second conductivity type and arranged on the drift layer;
a source region having the first conductivity type, arranged above the base region, and having an impurity concentration higher than the drift layer;
a trench gate structure with a gate insulation film that is arranged in a gate trench positioned from the surface of the source region to a depth deeper than the base region, and is located on an inner wall of the gate trench, and a gate electrode arranged on the gate insulation film;
a deep layer providing at least a part of the second conductivity type layer, and arranged in a deep trench that is included in at least a part of the first trenches and is located to a position deeper than the gate trench in the drift layer;
the first electrode is a source electrode electrically connected to the source region and the base region; and
the second electrode is a drain electrode and arranged on the back side of the substrate.

10. The silicon carbide semiconductor device according to claim 1 , wherein:
the substrate has the first conductivity type; and
the vertical type semiconductor element of the cell portion is a vertical type Schottky diode that has:
a deep layer disposed in a deep trench included in at least a part of the first trenches, and providing at least a part of the second conductivity type layer;
the first electrode is a Schottky electrode which contacts the drift layer and the deep layer; and
the second electrode is an ohmic electrode disposed on the back side of the substrate.

Assignees

• Denso Corp
• Toyota Motor Co Ltd

Inventors

• Takeuchi Yuichi
• Miyahara Shinichiro
• Akiba Atsuya
• Suzuki Katsumi
• Watanabe Yukihiko

Classifications

• H10P30/2042

  into crystalline silicon carbide · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D12/481

  having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs · CPC title

• H10D64/64

  Electrodes comprising a Schottky barrier to a semiconductor · CPC title

• H10D62/8325

  Silicon carbide · CPC title