Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

Patent metadata

Field	Value
Publication number	US-10784104-B2
Application number	US-201816004175-A
Country	US
Kind code	B2
Filing date	Jun 8, 2018
Priority date	Jun 9, 2017
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

Systems and methods of reversibly controlling the oxygen vacancy concentration and distribution in oxide heterostructures consisting of electronically conducting In2O3 films grown on ionically conducting Y2O3-stabilized ZrO2 substrates. Oxygen ion redistribution across the heterointerface is induced using an applied electric field oriented in the plane of the interface, resulting in controlled oxygen vacancy (and hence electron) doping of the film and possible orders-of-magnitude enhancement of the film's electrical conduction. The reversible modified behavior is dependent on interface properties and is attained without cation doping or changes in the gas environment in contact with the sample.

First claim

We claim:

1. A method of controlling oxygen vacancy distribution in a hetero structure, comprising:
applying an electric field to the heterostructure, the heterostructure having an oxygen ion conductor substrate and an oxide semiconductor layer with an interface there between, with a first electrode at a first end in contact with both the oxygen ion conductor substrate and the semiconductor layer and a second electrode at a second end in contact with both the oxygen ion conductor substrate and the semiconductor layer;
moving oxygen ions from the oxide semiconductor layer to the oxygen ion conductor substrate;
developing an applied current moving parallel to a longitudinal axis of the interface from the first electrode to the second electrode;
developing a voltage component orthogonal to the applied current;
wherein the conductance of the oxide semiconductor layer is increased by application of the electric field.

2. The method of claim 1 , wherein the oxide semiconductor layer is selected from the group consisting of In 2 O 3 , SrTiO 3 , VO 2 or WO 3 .

3. The method of claim 1 , wherein the oxygen ion conductor substrate is selected from the group consisting of Y 2 O 3 stabilized ZrO 2 , Gd-doped CeO 2 , Sr-doped LaGaO 3 and Mg-doped LaGaO 3 .

4. The method of claim 1 , wherein the oxide semiconductor layer is In 2 O 3 which is grown on (001) and (111) surfaces of the oxygen ion conductor substrate consisting of Y 2 O 3 stabilized ZrO 2 .

5. The method of claim 1 , further comprising developing a contact resistance between the first electrode and the semiconductor layer.

6. The method of claim 1 , further comprising developing a Schottky resistance adjacent an interface of the second electrode and the oxygen ion conductor substrate.

7. The method of claim 1 , further comprising removing the electric field, wherein oxygen ions move from the oxygen ion conductor substrate to the semiconductor and wherein the conductance of the oxide semiconductor layer decreases upon removal of the electric field.

8. A method of controlling oxygen vacancy distribution in a hetero structure, comprising:
applying an electric field to the heterostructure, the heterostructure having an Y 2 O 3 stabilized ZrO 2 substrate and an oxide semiconductor layer with an interface there between, with a first electrode at a first end in contact with both the substrate and the semiconductor layer and a second electrode at a second end in contact with both the substrate and the semiconductor layer;
moving oxygen ions from the oxide semiconductor layer to the substrate;
developing an applied current moving parallel to a longitudinal axis of the interface from the first electrode to the second electrode;
developing a voltage component orthogonal to the applied current; and
altering a property of the oxide semiconductor layer while the electric field is applied.

9. The method of claim 8 , wherein the altered property is selected from the group consisting of electrical conduction, chemical reactivity, magnetic properties, and optical properties.

10. The method of claim 8 , wherein the oxide semiconductor layer is selected from the group consisting of In 2 O 3 , SrTiO 3 , VO 2 or WO 3 .

11. The method of claim 8 , further comprising developing a contact resistance between the first electrode and the semiconductor layer.

12. The method of claim 8 , further comprising developing a Schottky resistance adjacent an interface of the second electrode and the substrate.

13. The method of claim 8 , further comprising removing the electric field, wherein oxygen ions move from the oxygen ion conductor substrate to the semiconductor and wherein the conductance of the oxide semiconductor layer decreases upon removal of the electric field.

Assignees

• Uchicago Argonne Llc

Inventors

• Eastman Jeffrey A
• Veal Boyd W
• Zapol Peter

Classifications

• H10P14/3824

  Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD · CPC title

• H10D64/01358

  the insulator being formed after the semiconductor body, the semiconductor being a Group III-V material · CPC title

• H10D64/0124

  to Group III-V semiconductors · CPC title

• H10P14/6312 Primary

  of Group III-V semiconductors · CPC title

• H01L21/02241 Primary

  Electricity · mapped topic