Aluminum apparatus with aluminum oxide layer and method for forming the same

Patent metadata

Field	Value
Publication number	US-10784087-B2
Application number	US-201916383548-A
Country	US
Kind code	B2
Filing date	Apr 12, 2019
Priority date	Jun 14, 2016
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

First claim

What is claimed is:

1. An aluminum apparatus comprising:
an aluminum body; and
an aluminum oxide layer formed on the aluminum body, wherein:
the aluminum oxide layer includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
widths of the columnar grains are substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

2. The aluminum apparatus of claim 1 , wherein the average width of the plural columnar grains is has a width from 25 nm to 35 nm.

3. The aluminum apparatus of claim 1 , wherein the aluminum oxide layer includes a Boehmite phase.

4. The aluminum apparatus of claim 1 , wherein the thickness T of the aluminum oxide layer is in a range from 20 μm to 200 μm.

5. The aluminum apparatus of claim 1 , wherein the aluminum oxide layer shows a peak relating to —SO 4 ligand and a peak relating to at least one of Boehmite phase and —OH ligand stronger than a peak relating to carbon in a Raman spectrum.

6. The aluminum apparatus of claim 1 , wherein the widths of the columnar grains are substantially constant from the outer surface of the aluminum oxide layer to a depth of at least ⅔ T.

7. A plasma chamber comprising:
an aluminum body; and
an aluminum oxide layer formed on the aluminum body, wherein:
the aluminum oxide layer is formed on an inner surface of the plasma chamber,
the aluminum oxide layer includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm, and
widths of the columnar grains are substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

8. The plasma chamber of claim 7 , wherein the thickness T of the aluminum oxide layer is in a range from 20 μm to 200 μm.

9. The plasma chamber of claim 7 , wherein the widths of the columnar grains are substantially constant from the outer surface of the aluminum oxide layer to a depth of at least ¾ T.

10. The plasma chamber of claim 7 , wherein the widths of the columnar grains are substantially constant from the outer surface of the aluminum oxide layer to an interface between the aluminum body and the aluminum oxide layer.

11. The plasma chamber of claim 7 , wherein the average width of the columnar grains is has a width from 20 nm to 50 nm.

12. The plasma chamber of claim 7 , wherein the aluminum oxide layer includes a Boehmite phase.

13. The plasma chamber of claim 7 , wherein the aluminum oxide layer shows a peak relating to —SO 4 ligand and a peak relating to at least one of Boehmite phase and —OH ligand stronger than a peak relating to carbon in a Raman spectrum.

14. The plasma chamber of claim 7 , wherein the aluminum oxide layer is also formed on an outer surface of the plasma chamber.

15. The plasma chamber of claim 7 , wherein a variation of the widths of the columnar grains is within ±20% of the average width.

16. A plasma chamber comprising:
an aluminum body; and
an aluminum oxide layer formed on the aluminum body, wherein:
the aluminum oxide layer includes a Boehmite phase, and the aluminum oxide layer shows a peak relating to —SO 4 ligand and a peak relating to at least one of Boehmite phase and —OH ligand stronger than a peak relating to carbon in a Raman spectrum.

17. The plasma chamber of claim 16 , wherein:
the aluminum oxide layer includes plural columnar grains, and
widths of the columnar grains are substantially constant from an outer surface of the aluminum oxide layer to a depth of at least ½ T, where T is a thickness of the aluminum oxide layer.

18. The plasma chamber of claim 17 , wherein a variation of the widths of the columnar grains is within ±20% of the average width.

19. The plasma chamber of claim 17 , wherein the thickness T of the aluminum oxide layer is in a range from 20 μm to 200 μm.

20. The plasma chamber of claim 17 , wherein the widths of the columnar grains are substantially constant from the outer surface of the aluminum oxide layer to a depth of at least ¾ T.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Ru-Chien
• Chen Bing-Hung
• Koai Keith Kuang-Kuo

Classifications

• C25D11/16

  Pretreatment {, e.g. desmutting} · CPC title

• C25D11/08

  containing inorganic acids · CPC title

• C25D11/04

  of aluminium or alloys based thereon · CPC title

• C25D11/246 Primary

  for sealing layers · CPC title

• H01J37/32495 Primary

  Means for protecting the vessel against plasma · CPC title