Strain gauge with mechanically decoupled temperature sensor

Patent metadata

Field	Value
Publication number	US-10782196-B2
Application number	US-201815899204-A
Country	US
Kind code	B2
Filing date	Feb 19, 2018
Priority date	Feb 19, 2018
Publication date	Sep 22, 2020
Grant date	Sep 22, 2020

Abstract

A semiconductor device includes a strain gauge on a substrate, the strain gauge configured to measure a stress of the substrate; and a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate;
a strain gauge on the substrate, the strain gauge configured to measure a stress of the substrate; and
a temperature sensor disposed within the substrate, the temperature sensor being decoupled from the stress of the substrate.

2. The semiconductor device of claim 1 , wherein the temperature sensor is attached to the substrate by a silicon spring.

3. The semiconductor device of claim 2 , wherein the substrate has an opening, and wherein the temperature sensor is in the opening and attached to the substrate by the silicon spring.

4. The semiconductor device of claim 3 , wherein a thickness of the temperature sensor is smaller than a thickness of the substrate.

5. The semiconductor device of claim 3 , wherein the silicon spring comprises first conductive features that electrically couple the temperature sensor to second conductive features of the substrate.

6. The semiconductor device of claim 3 , wherein the silicon spring thermally couples the temperature sensor to the substrate.

7. The semiconductor device of claim 1 , wherein the strain gauge comprises a sensing bridge, wherein the sensing bridge comprises a first piezoresistor, a second piezoresistor, a third piezoresistor, and a fourth piezoresistor, wherein the first piezoresistor and the second piezoresistor have a positive correlation with the stress of the substrate, and wherein the third piezoresistor and the fourth piezoresistor have a negative correlation with the stress of the substrate.

8. The semiconductor device of claim 7 , wherein the first piezoresistor and the second piezoresistor are parallel to a direction of the stress of the substrate, and the third piezoresistor and the fourth piezoresistor are perpendicular to the direction of the stress of the substrate.

9. The semiconductor device of claim 7 , wherein the first piezoresistor, the second piezoresistor, the third piezoresistor, and the fourth piezoresistor are parallel to each other.

10. The semiconductor device of claim 7 , wherein the first piezoresistor, the second piezoresistor, the third piezoresistor, and the fourth piezoresistor comprise four monocrystalline piezoresistors, four polycrystalline piezoresistors, or two monocrystalline piezoresistors and two polycrystalline piezoresistors.

11. The semiconductor device of claim 7 , wherein the first piezoresistor, the second piezoresistor, the third piezoresistor, and the fourth piezoresistor comprise a piezoresistive material.

12. The semiconductor device of claim 1 , wherein the strain gauge comprises a capacitive element, wherein a capacitance of the capacitive element is configured to change in response to a change in the stress of the substrate.

13. The semiconductor device of claim 1 , wherein the strain gauge comprises a piezoelectric material.

14. The semiconductor device of claim 1 , wherein the temperature sensor comprises a thermal bridge, wherein the thermal bridge comprises a first resistor, a second resistor, a third resistor, and a fourth resistor, and wherein the first resistor, the second resistor, the third resistor, the fourth resistor are electrically connected in a Wheatstone bridge configuration.

15. The semiconductor device of claim 14 , wherein the first resistor, the second resistor, the third resistor, and the fourth resistor are orientated in a same direction.

16. The semiconductor device of claim 15 , wherein the first resistor and the second resistor have positive correlations with temperature, and the third resistor and the fourth resistor have negative correlations with temperature.

17. The semiconductor device of claim 15 , wherein the first resistor and the second resistor are polycrystalline semiconductor resistors, and the third resistor and the fourth resistor are monocrystalline semiconductor resistors.

18. The semiconductor device of claim 1 , wherein the strain gauge and the temperature sensor are integrated on a same semiconductor die.

19. A semiconductor device comprising:
a frame comprising a semiconductor material, the frame surrounding a cavity in the frame;
a temperature sensor disposed in the cavity; and
a spring comprising the semiconductor material, the temperature sensor being elastically attached to the frame by the spring.

20. The semiconductor device of claim 19 , wherein the temperature sensor is physically separated from the frame.

21. The semiconductor device of claim 19 , wherein the temperature sensor comprises a thermal bridge, and the thermal bridge comprises a first resistor, a second resistor, a third resistor and a fourth resistor connected in a Wheatstone bridge configuration.

22. The semiconductor device of claim 21 , wherein the first resistor, the second resistor, the third resistor, and the fourth resistor are parallel to each other.

23. The semiconductor device of claim 21 , wherein a resistance of each of the first resistor and the second resistor has a positive correlation with temperature, and a resistance of each of the third resistor and the fourth resistor has a negative correlation with temperature.

24. A semiconductor device comprising:
a substrate;
a strain gauge on the substrate and configure to measure a stress of the substrate;
a silicon spring in an opening of the substrate;
a temperature sensor suspended in the opening of the substrate by the silicon spring, wherein the temperature sensor is decoupled from the stress of the substrate, wherein the silicon spring electrically couples the temperature sensor to electrically conductive features of the substrate; and
a digital logic on the substrate, wherein the digital logic is electrically coupled to the strain gauge and the temperature sensor, wherein the digital logic is configured to:
receive an uncalibrated temperature measurement of the substrate from the temperature sensor;
receive an uncalibrated stress measurement of the substrate from the strain gauge;
convert the uncalibrated temperature measurement into a calibrated temperature value; and
convert the uncalibrated stress measurement into a calibrated stress value using the calibrated temperature value.

25. The semiconductor device of claim 24 , further comprising a memory module on the substrate, wherein the memory module is configured to store first calibration data for the temperature sensor, wherein the first calibration data comprises a temperature sensitivity and a temperature offset, wherein the uncalibrated temperature measurement is converted into the calibrated temperature value by the digital logic using the temperature sensitivity and the temperature offset.

26. The semiconductor device of claim 25 , wherein the memory module is further configured to store second calibration data for the strain gauge, the second calibration data comprising:
a first pressure sensitivity at a first temperature;
a first pressure offset at the first temperature;
a second pressure sensitivity at a second temperature; and
a second pressure offset at the second temperature,
wherein the uncalibrated stress measurement is converted into the calibrated stress value by the digital logic using the calibrated temperature value and the second calibration data.

27. The semiconductor device of claim 26 , wherein the digital logic is configured to:
perform a linear interpolation using the second calibration data and the calibrated temperature va

Assignees

• St Microelectronics Srl

Inventors

• Caltabiano Daniele

Classifications

• G01L9/045

  with electric temperature compensating means (non electric temperature compensating means G01L19/04) · CPC title

• G01L9/0042 Primary

  Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms (details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively) · CPC title

• G01L19/0092

  Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature (G01L9/025, G01L9/045, G01L9/065, G01L9/085, G01L9/105, G01L9/125, G01L19/02, G01L19/04 take precedence; measuring two or more variable G01D21/02; temperature sensors with pressure compensation G01K1/26) · CPC title

• G01L9/0054

  integral with a semiconducting diaphragm · CPC title

• G01L1/2293

  of the semi-conductor type · CPC title