High-frequency integrated circuit

Patent metadata

Field	Value
Publication number	US-10778221-B2
Application number	US-201916433134-A
Country	US
Kind code	B2
Filing date	Jun 6, 2019
Priority date	Jan 10, 2019
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

According to one embodiment, a first switch controls conduction between first and second nodes according to a potential on a first control node. A second switch controls conduction between the first control node and a first potential node according to a potential on a second control node. A first circuit includes first and second output nodes respectively coupled to the first and second control nodes, and outputs at the second output node a potential that brings the second switch out of conduction while outputting a first potential at the first output node. The first circuit has a high impedance at the first output node while outputting at the second output node a potential that brings the second switch into conduction.

First claim

What is claimed is:

1. A high-frequency integrated circuit comprising:
a first switch circuit which controls conduction between a first node and a second node according to a potential applied to a first control node;
a second switch circuit which controls conduction between the first control node and a first potential node according to a potential applied to a second control node; and
a first circuit including a first output node coupled to the first control node and a second output node coupled to the second control node, the first circuit outputting, at the second output node, a first potential that brings the second switch circuit out of conduction during a period of outputting a second potential at the first output node, the first circuit having a first impedance at the first output node during the period of outputting the second potential at the first output node, the first circuit having a second impedance at the first output node during a period of outputting, at the second output node, a third potential that brings the second switch circuit into conduction, the second impedance being higher than the first impedance, wherein
the first circuit comprises
a first potential circuit which outputs the second potential at a third node;
a third switch circuit between the third node and the first output node, the third switch circuit being brought into conduction exclusively with the second switch circuit; and
a second circuit including the second output node.

2. The high-frequency integrated circuit according to claim 1 , wherein:
the third switch circuit is brought into or out of conduction according to a potential of the second control node,
the first circuit outputs, at the second output node, the first potential during a period of outputting the second potential at the first output node, and during a period of outputting a fourth potential at the first output node,
a potential of the first potential node is lower than the second potential and higher than the fourth potential.

3. The high-frequency integrated circuit according to claim 2 , wherein:
the second potential is a positive potential, and the fourth potential is a negative potential.

4. The high-frequency integrated circuit according to claim 3 , wherein:
the potential of the first potential node is a ground potential.

5. The high-frequency integrated circuit according to claim 4 , wherein:
the first switch circuit is a field effect transistor.

6. The high-frequency integrated circuit according to claim 1 , wherein
the first potential circuit outputs the second potential or the fourth potential at the third node, based on a level of a first signal, and
the second circuit generates, at the second output node, a potential of a first level over a first period since a change in the level of the first signal.

7. The high-frequency integrated circuit according to claim 6 , wherein:
the second potential is a positive potential, and the fourth potential is a negative potential.

8. The high-frequency integrated circuit according to claim 7 , wherein:
the potential of the first potential node is a ground potential.

9. A high-frequency integrated circuit comprising:
a first switch circuit which controls conduction between a first node and a second node according to a potential applied to a first control node;
a second switch circuit which controls conduction between the first control node and a first potential node according to a potential applied to a second control node; and
a first circuit including a first output node, a second output node, a third node, a third switch circuit, and a first potential circuit, wherein
the first potential circuit outputs a first potential at the third node,
the first output node is coupled to the first control node,
the second output node is coupled to the second control node, and
the third switch circuit is provided between the third node and the first output node, is configured to vary an impedance between the third node and the first output node, and is brought into conduction exclusively with the second switch circuit.

10. The high-frequency integrated circuit according to claim 9 , wherein:
the third switch circuit has a first impedance while the first circuit is outputting a potential that brings the second switch circuit into conduction at the second output node,
the third switch circuit has a second impedance while the first circuit is outputting the first potential, and
the first impedance is higher than the second impedance.

11. The high-frequency integrated circuit according to claim 9 , wherein:
the first circuit further includes a second circuit that includes the second output node.

12. A high-frequency integrated circuit comprising:
a first switch circuit which controls conduction between a first node and a second node according to a potential applied to a first control node;
a second switch circuit which controls conduction between the first control node and a first potential node according to a potential applied to a second control node; and
a first circuit including a first output node, a second output node, a third node, and a variable impedance circuit, wherein
the first output node is coupled to the first control node,
the second output node is coupled to the second control node,
the variable impedance circuit is provided between the third node and the first output node, and is configured to vary an impedance between the third node and the first output node, and
the impedance between the third node and the first output node becomes low exclusively with an impedance of the second switch circuit.

13. The high-frequency integrated circuit according to claim 12 , wherein:
the first circuit further includes a first potential circuit that outputs a first potential to the third node,
the first circuit outputs a potential that brings the second switch circuit out of conduction to the second output node while outputting the first potential to the first output node.

14. The high-frequency integrated circuit according to claim 12 , wherein:
the first circuit further includes a fourth node coupled to the variable impedance circuit,
the variable impedance circuit is configured to vary an impedance between the first output node and the fourth node, and
the impedance between the first output node and the fourth node becomes low exclusively with the impedance between the third node and the first output node and the impedance of the second switch circuit.

15. The high-frequency integrated circuit according to claim 14 , wherein:
the first circuit further includes a first potential circuit that outputs a first potential to the third node and a second potential circuit that outputs a second potential to the fourth node.

Assignees

• Toshiba Kk
• Toshiba Electronic Devices & Storage Corp
• Toshiba Electronics Devices & Storage Corp

Inventors

• Ohno Shinji
• Ishimori Toshifumi
• Sugawara Mitsuru

Classifications

• H03K17/693 Primary

  Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors (logic circuits H03K19/00; code converters H03M5/00, H03M7/00) · CPC title

• H03H11/346

  particularly adapted as input circuit for receivers · CPC title

• H03K17/08122

  in field-effect transistor switches · CPC title