MEMS resonator with a high quality factor

Patent metadata

Field	Value
Publication number	US-10778184-B2
Application number	US-201715807778-A
Country	US
Kind code	B2
Filing date	Nov 9, 2017
Priority date	May 27, 2015
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

A symmetrical MEMS resonator is disclosed with a high quality factor. The MEMS resonator includes a silicon layer with a top surface and bottom surface opposite the top surface. A pair of first metal layers is provided above the top surface of the silicon layer and a corresponding pair of second metal layers is symmetrically provided below the second surface of the silicon layer relative to the pair of first metal layers. Furthermore, a first piezoelectric layer is disposed between the pair of first metal layers and a second piezoelectric layer is disposed between the pair of second metal layers.

First claim

The invention claimed is:

1. A MEMS resonator etched to vibrate in a lateral direction, the MEMS resonator comprising:
a silicon layer having a first surface and a second surface opposite the first surface;
at least one metal layer disposed above the first surface of the silicon layer and at least one corresponding metal layer disposed below the second surface of the silicon layer; and
a piezoelectric layer disposed above the first surface of the silicon layer and a corresponding piezoelectric layer disposed below the second surface of the silicon layer,
wherein the respective metal layers and the respective piezoelectric layers are symmetrically disposed about the silicon layer such that the MEMS resonator structurally vibrates in the lateral direction that extends parallel to the first and second surfaces of the silicon layer.

2. The MEMS resonator according to claim 1 , wherein vertical sides surfaces of the silicon layer are etched to be unobstructed, such that the MEMS resonator is structurally configured to vibrate primarily in the lateral direction.

3. The MEMS resonator according to claim 1 ,
wherein the at least one metal layer comprises a pair of first metal layers with the piezoelectric layer disposed therebetween, and
wherein the at least one corresponding metal layer comprises a pair of second metal layers with the corresponding piezoelectric layer disposed therebetween.

4. The MEMS resonator according to claim 3 , wherein the silicon layer has a thickness greater than a combined thickness of the pairs of first and second metal layers and the piezoelectric layers.

5. The MEMS resonator according to claim 4 , wherein the pair of first metal layers and the piezoelectric layer are symmetrically disposed about the silicon layer with respect to the pair of second metal layers and the corresponding piezoelectric layer.

6. The MEMS resonator according to claim 4 , wherein the pair of first metal layers is electrically coupled to a voltage source to actuate the MEMS resonator.

7. The MEMS resonator according to claim 6 , wherein the pair of second metal layers is electrically coupled to the voltage source.

8. The MEMS resonator according to claim 6 , wherein the pair of second metal layers is electrically insulated from the voltage source.

9. The MEMS resonator according to claim 4 , wherein the piezoelectric layer comprises a thickness substantially equal to a thickness of the corresponding piezoelectric layer.

10. The MEMS resonator according to claim 9 , wherein the pair of first metal layers each comprises a thickness substantially equal to respective thicknesses of the pair of second metal layers.

11. The MEMS resonator according to claim 1 ,
wherein the piezoelectric layer comprises a thickness substantially equal to a thickness of the corresponding piezoelectric layer, and
wherein the at least one metal layer comprises a thickness substantially equal to a thickness of the at least one corresponding metal layer.

12. The MEMS resonator according to claim 1 , wherein the silicon layer comprises a thickness between 5 and 30 micrometers.

13. A MEMS resonator etched to vibrate in a lateral direction, the MEMS resonator comprising:
a silicon layer having a first and second opposing surfaces and etched vertical sides surfaces that are unobstructed, such that the MEMS resonator structurally vibrates primarily in the lateral direction;
a pair of first metal layers disposed above the first surface of the silicon layer;
a first piezoelectric layer disposed between the pair of first metal layers;
a pair of second metal layers symmetrically disposed below the second surface of the silicon layer relative to the pair of first metal layers; and
a second piezoelectric layer disposed between the pair of second metal layers.

14. The MEMS resonator according to claim 13 , wherein the respective pairs of metal layers and the respective first and second piezoelectric layers are symmetrically disposed about the silicon layer such that the MEMS resonator is completely symmetrical in a thickness direction and is structurally configured to vibrate primarily in the lateral direction that extends parallel to the first and second opposing surfaces of the silicon layer.

15. The MEMS resonator according to claim 13 , wherein the pair of first metal layers is electrically coupled to a voltage source to actuate the MEMS resonator.

16. The MEMS resonator according to claim 15 , wherein the pair of second metal layers is electrically insulated from the voltage source.

17. The MEMS resonator according to claim 13 , wherein the silicon layer comprises a thickness between 5 and 30 micrometers and that is greater than a combined thickness of the pairs of first and second metal layers and the piezoelectric layers.

18. A MEMS resonator etched to vibrate in a lateral direction, the MEMS resonator comprising:
a silicon layer having a first surface, a second surface opposite the first surface, and vertical sides surfaces that are unobstructed, such that the MEMS resonator structurally vibrates primarily in the lateral direction;
a pair of first metal layers disposed above the first surface of the silicon layer;
a first piezoelectric layer having a first thickness disposed between the pair of first metal layers; and
a second piezoelectric layer disposed below the second surface of the silicon layer,
wherein the second piezoelectric layer comprises a second thickness greater than the first thickness of the first piezoelectric layer to inhibit vibration in a thickness direction of the MEMS resonator when the pair of first metal layers are excited by a voltage source.

19. The MEMS resonator according to claim 18 , wherein the pair of first metal layers and the first piezoelectric layer have a combined mechanical stiffness that is substantially equal to a mechanical stiffness of the second piezoelectric layer.

20. The MEMS resonator according to claim 19 , wherein the combined mechanical stiffness of the pair of first metal layers and the first piezoelectric layer is within 10% MPa*m of the mechanical stiffness of the second piezoelectric layer.

21. The MEMS resonator according to claim 1 , wherein the silicon layer is directly coupled by at least one connecting arm to a frame that surrounds the silicon layer in the lateral direction.

Assignees

• Murata Manufacturing Co

Inventors

• Kaajakari Ville

Classifications

• H03H9/02228 Primary

  Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer · CPC title

• H03H2009/241

  Bulk-mode MEMS resonators · CPC title

• H03H9/02433

  Means for compensation or elimination of undesired effects · CPC title

• H03H9/171 Primary

  implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type · CPC title

• H03H2009/02496

  Horizontal, i.e. parallel to the substrate plane · CPC title