CMOS Guanella balun

US10778176B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10778176-B2
Application numberUS-201816203763-A
CountryUS
Kind codeB2
Filing dateNov 29, 2018
Priority dateNov 29, 2018
Publication dateSep 15, 2020
Grant dateSep 15, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Guanella topology balun/unun impedance transformer contains cascaded, i.e., series-coupled, coils of different sizes implemented in RF CMOS technology. The cascading of differently-sized coils provides for a large resonance-free operating bandwidth. The shunt inductive loading maximizes low frequency performance.

First claim

Opening claim text (preview).

What is claimed is: 1. A Guanella balun, comprising: a substrate; a first pair of first and second generally planar coupled coils, interleaved with one another, and formed on the substrate by a CMOS process, each coil comprising multiple turns and having respective first and second ends, the interleaved coils including a first plurality of crossings between turns of the respective coils, wherein each of the crossings of the first plurality of crossings is structured to match an impedance on each side of the crossing; a first output node coupled to the second end of the first coil; a second output node coupled to the second end of the second coil; an inductive coil formed on the substrate by the CMOS process, the inductive coil having a first end and a second end, the first end of the inductive coil coupled to the first output node; a first switching circuit coupled to the first coil and configured to, in a first state, bypass a section of the first coil; and a second switching circuit coupled to the second coil and configured to, in a first state, bypass a section of the second coil. 2. The Guanella balun of claim 1 , wherein each of the switches further comprises one or more of: at least one FET device; a pin diode switch; or a bipolar transistor (BJT). 3. The Guanella balun of claim 1 , wherein a width of a coil at each crossing and a spacing between the coils in the first pair of interleaved coils are structured to provide the matched impedances. 4. The Guanella balun of claim 1 , wherein the first switching circuit comprises: a first switch configured to, in a first state, couple a first section of the first coil to a second section of the first coil and, in a second state, couple the first section of the first coil to a first node; a second switch configured to, in a first state, couple the second end of the first coil to a first output node and, in a second state, couple the first output node to the first node; a third switch configured to, in a first state, couple a first section of the second coil to a second section of the second coil and, in a second state, couple the first section of the second coil to second node different from the first node; and a fourth switch configured to, in a first state, couple the second end of the second coil to a second output node and, in a second state, couple the second output node to the second node. 5. A Guanella balun comprising: a substrate; a first pair of first and second generally planar coupled coils, interleaved with one another, and formed on the substrate by a CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a first plurality of crossings between turns of the respective coils, wherein each of the crossings of the first plurality of crossings is structured to match an impedance on each side of the crossing; a second pair of third and fourth generally planar coupled coils, interleaved with one another and formed on the substrate by the CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a second plurality of crossings between turns of the respective coils, wherein each of the crossings of the second plurality of crossings is structured to match an impedance on each side of the crossing; and an inductive coil formed on the substrate by the CMOS process, the inductive coil having first and second ends, wherein the first pair of coupled coils comprises: a first switching circuit coupled to the first coil and configured to, in a first state, electrically disconnect a section of the first coil; and a second switching circuit coupled to the second coil and configured to, in a first state, electrically disconnect a section of the second coil, wherein the output of the first coil is coupled to the input of the third coil and the first end of the inductive coil, and wherein a first diameter of the first pair of interleaved coils and a second diameter of the second pair of stacked coils are different from one another. 6. A Guanella balun, comprising: a substrate; a first pair of first and second generally planar coupled coils, interleaved with one another, and formed on the substrate by a CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a first plurality of crossings between turns of the respective coils, wherein each of the crossings of the first plurality of crossings is structured to match an impedance on each side of the crossing; a second pair of third and fourth generally planar coupled coils, interleaved with one another and formed on the substrate by the CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a second plurality of crossings between turns of the respective coils, wherein each of the crossings of the second plurality of crossings is structured to match an impedance on each side of the crossing; an inductive coil formed on the substrate by the CMOS process, the inductive coil having first and second ends; a first switching circuit coupled to the first coil and configured to, in a first state, bypass a section of the first coil; a second switching circuit coupled to the second coil and configured to, in a first state, bypass a section of the second coil; a third switching circuit coupled to the third coil and configured to, in a first state, bypass a section of the third coil; and a fourth switching circuit coupled to the fourth coil and configured to, in a first state, bypass a section of the fourth coil, wherein the output of the first coil is coupled to the input of the third coil and the first end of the inductive coil, and wherein a first diameter of the first pair of interleaved coils and a second diameter of the second pair of stacked coils are different from one another. 7. A Guanella balun, comprising: a substrate; a first pair of first and second generally planar coupled coils, interleaved with one another, and formed on the substrate by a CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a first plurality of crossings between turns of the respective coils, wherein each of the crossings of the first plurality of crossings is structured to match an impedance on each side of the crossing; a second pair of third and fourth generally planar coupled coils, interleaved with one another and formed on the substrate by the CMOS process, each coil comprising multiple turns and having a respective input and output, the interleaved coils including a second plurality of crossings between turns of the respective coils, wherein each of the crossings of the second plurality of crossings is structured to match an impedance on each side of the crossing; and an inductive coil formed on the substrate by the CMOS process, the inductive coil having first and second ends, wherein the output of the first coil is coupled to the input of the third coil and the first end of the inductive coil, wherein a first diameter of the first pair of interleaved coils and a second diameter of the second pair of stacked coils are different from one another, and wherein the first pair of coupled coils comprises: a first switching circuit coupled to the first coil; and a second switching circuit coupled to the second coil, wherein the first coil comprises respective first and second sub-sections of coils, wherein the second coil comprises respective first and second sub-sections of coils, wherein the first switching circuit is configured to, in a first state, electrically disconnect the second sub-section of the first coil from the fi

Assignees

Inventors

Classifications

  • Inductors · CPC title

  • on stacked layers · CPC title

  • Structural association with built-in electric component, e.g. fuse · CPC title

  • Printed circuit coils (apparatus or processes for manufacturing printed circuits in general H05K3/00) · CPC title

  • Inductances without magnetic core · CPC title

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Frequently asked questions

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What does patent US10778176B2 cover?
Guanella topology balun/unun impedance transformer contains cascaded, i.e., series-coupled, coils of different sizes implemented in RF CMOS technology. The cascading of differently-sized coils provides for a large resonance-free operating bandwidth. The shunt inductive loading maximizes low frequency performance.
Who is the assignee on this patent?
Raytheon Co
What technology area does this patent fall under?
Primary CPC classification H03H7/38. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).