Magnetically pumped voltage controlled oscillator

US10778145B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10778145-B2
Application numberUS-201916681771-A
CountryUS
Kind codeB2
Filing dateNov 12, 2019
Priority dateJan 2, 2019
Publication dateSep 15, 2020
Grant dateSep 15, 2020

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A voltage controlled oscillator includes a first inductor, a second inductor, a first metal oxide semiconductor (MOS) transistor, a second MOS transistor, and an inductor-capacitor (LC) tank circuit. A first end of the first inductor and a first end of the second inductor are coupled to a first power rail. A drain node of the first MOS transistor is coupled to a second end of the first inductor. A drain node of the second MOS transistor is coupled to a second end of the second inductor. Source nodes of the first MOS transistor and the second MOS transistor are coupled to a second power rail. The LC tank circuit is coupled to gate nodes of the first MOS transistor and the second MOS transistor, wherein energy is magnetically pumped into the LC tank circuit through the first inductor and the second inductor.

First claim

Opening claim text (preview).

What is claimed is: 1. A voltage controlled oscillator comprising: a first inductor, having a first end and a second end; a second inductor, having a first end and a second end, wherein the first end of the second inductor is coupled to the first end of the first inductor; a first P-channel metal oxide semiconductor (PMOS) transistor, having a gate node, a drain node, and a source node, wherein the drain node of the first PMOS transistor is coupled to the second end of the first inductor, and the source node of the first MOS transistor is coupled to a first power rail; a second PMOS transistor, having a gate node, a drain node, and a source node, wherein the drain node of the second PMOS transistor is coupled to the second end of the second inductor, and the source node of the second PMOS transistor is coupled to the first power rail; a first N-channel metal oxide semiconductor (NMOS) transistor, having a gate node, a drain node, and a source node, wherein the drain node of the first NMOS transistor is coupled to the second end of the first inductor, and the source node of the first MOS transistor is coupled to a second power rail; a second NMOS transistor, having a gate node, a drain node, and a source node, wherein the drain node of the second NMOS transistor is coupled to the second end of the second inductor, and the source node of the second NMOS transistor is coupled to the second power rail; and an inductor-capacitor (LC) tank circuit, coupled to the gate node of the first PMOS transistor, the gate node of the second PMOS transistor, the gate node of the first NMOS transistor, and the gate node of the second NMOS transistor, wherein energy is magnetically pumped into the LC tank circuit through the first inductor and the second inductor, such that there is no direct connection between the LC tank circuit and the drain node of each of the first PMOS transistor and the first NMOS transistor and there is no direct connection between the LC tank circuit and the drain node of each of the second PMOS transistor and the second NMOS transistor. 2. The voltage controlled oscillator of claim 1 , wherein the LC tank circuit comprises: a capacitor, wherein a first end of the capacitor is coupled to the gate node of the second PMOS transistor and the gate node of the second NMOS transistor, and a second end of the capacitor is coupled to the gate node of the first PMOS transistor and the gate node of the first NMOS transistor; a third inductor, magnetically coupled to the first inductor, wherein a first end of the third inductor is coupled to a first bias voltage, and a second end of the third inductor is coupled to the first end of the capacitor; and a fourth inductor, magnetically coupled to the second inductor, wherein a first end of the fourth inductor is coupled to the first bias voltage, and a second end of the fourth inductor is coupled to the second end of the capacitor. 3. The voltage controlled oscillator of claim 2 , wherein the first end of the first inductor and the first end of the second inductor are coupled to the first bias voltage. 4. The voltage controlled oscillator of claim 2 , wherein the first end of the first inductor and the first end of the second inductor are coupled to a second bias voltage, and a setting of the first bias voltage is independent of a setting of the second bias voltage. 5. A voltage controlled oscillator comprising: a first inductor, having a first end and a second end; a second inductor, having a first end and a second end, wherein the first end of the second inductor is coupled to the first end of the first inductor; a third inductor, having a first end and a second end; a fourth inductor, having a first end and a second end, wherein the first end of the fourth inductor is coupled to the first end of the third inductor; a first P-channel metal oxide semiconductor (PMOS) transistor, having a gate node, a drain node, and a source node, wherein the drain node of the first PMOS transistor is coupled to the second end of the first inductor, and the source node of the first MOS transistor is coupled to a first power rail; a second PMOS transistor, having a gate node, a drain node, and a source node, wherein the drain node of the second PMOS transistor is coupled to the second end of the second inductor, and the source node of the second PMOS transistor is coupled to the first power rail; a first N-channel metal oxide semiconductor (NMOS) transistor, having a gate node, a drain node, and a source node, wherein the drain node of the first NMOS transistor is coupled to the second end of the third inductor, and the source node of the first MOS transistor is coupled to a second power rail; a second NMOS transistor, having a gate node, a drain node, and a source node, wherein the drain node of the second NMOS transistor is coupled to the second end of the fourth inductor, and the source node of the second NMOS transistor is coupled to the second power rail; and an inductor-capacitor (LC) tank circuit, coupled to the gate node of the first PMOS transistor, the gate node of the second PMOS transistor, the gate node of the first NMOS transistor, and the gate node of the second NMOS transistor, wherein energy is magnetically pumped into the LC tank circuit through the first inductor, the second inductor, the third inductor, and the fourth inductor, such that there is no direct connection between the LC tank circuit and the drain node of each of the first PMOS transistor and the first NMOS transistor and there is no direct connection between the LC tank circuit and the drain node of each of the second PMOS transistor and the second NMOS transistor. 6. The voltage controlled oscillator of claim 5 , wherein the LC tank circuit comprises: a capacitor, wherein a first end of the capacitor is coupled to the gate node of the second PMOS transistor and the gate node of the second NMOS transistor, and a second end of the capacitor is coupled to the gate node of the first PMOS transistor and the gate node of the first NMOS transistor; a third inductor, magnetically coupled to both of the first inductor and the third inductor, wherein a first end of the third inductor is coupled to a bias voltage, and a second end of the third inductor is coupled to the first end of the capacitor; and a fourth inductor, magnetically coupled to both of the second inductor and the fourth inductor, wherein a first end of the fourth inductor is coupled to the bias voltage, and a second end of the fourth inductor is coupled to the second end of the capacitor. 7. The voltage controlled oscillator of claim 5 , wherein the first end of the first inductor and the first end of the second inductor are coupled to the second power rail. 8. The voltage controlled oscillator of claim 5 , wherein the first end of the third inductor and the first end of the fourth inductor are coupled to the first power rail.

Assignees

Inventors

Classifications

  • concerning mainly the controlled oscillator of the loop · CPC title

  • the amplifier comprising one or more bipolar transistors · CPC title

  • H03B5/1228Primary

    the amplifier comprising one or more field effect transistors · CPC title

  • H03B5/1212Primary

    the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair · CPC title

  • the feedback circuit comprising a transformer · CPC title

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What does patent US10778145B2 cover?
A voltage controlled oscillator includes a first inductor, a second inductor, a first metal oxide semiconductor (MOS) transistor, a second MOS transistor, and an inductor-capacitor (LC) tank circuit. A first end of the first inductor and a first end of the second inductor are coupled to a first power rail. A drain node of the first MOS transistor is coupled to a second end of the first inductor…
Who is the assignee on this patent?
Mediatek Inc
What technology area does this patent fall under?
Primary CPC classification H03B5/1228. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Sep 15 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 7 related publications on this page (citations in our corpus or others sharing the same primary CPC).