Memory system and operating method of the same

Patent metadata

Field	Value
Publication number	US-10777280-B2
Application number	US-201816114561-A
Country	US
Kind code	B2
Filing date	Aug 28, 2018
Priority date	Dec 19, 2017
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

A memory system includes: a memory device including a plurality of pages; and a controller suitable for generating a read descriptor in response to an entered command, reading and outputting read data stored in at least one page in response to the read descriptor, determining whether each per-page data of the read data includes an error, storing indicators for showing whether each per-page data includes the error, re-reading some of the read data on per-page basis, based on the indicators, without generating another read descriptor, and updating the indicators based on an error check result after the re-reading.

First claim

What is claimed is:

1. A memory system comprising:
a memory device; and
a controller including a processor suitable for performing first read operations to a plurality of pages included in the memory device, a memory suitable for storing an error report map and a mask map, and ECC unit suitable for performing ECC operations,
wherein the processor generates the error report map including original error report bits according to results of the first read operations, and generates the mask map including mask map bits from the error report map including the original error report bits,
wherein the ECC unit performs ECC operations to respective pages corresponding to the mask map bits according to bit values of the mask map bits,
wherein the processor performs second read operations to the respective pages, and updates the mask map bits according to results of the second read operations, and
wherein the mask map bits are error report bits, which it is possible to update.

2. The memory system of claim 1 , wherein the bit values of the mask map bits are inverted values of the original error report bits corresponding to the mask map bits.

3. The memory system of claim 1 , the ECC unit further performs ECC operations to respective pages corresponding to the mask map bits according to the bit values of the updated mask map bits and performing third read operations to the respective pages.

4. The memory system of claim 3 , wherein the third read operations are a single read operation.

5. The memory system of claim 1 ,
wherein the first read operations are a multi-read operation, and
wherein the second read operations are a single read operation.

6. The memory system of claim 1 , the processor further generates a read descriptor including read result information for read units, to which the first read operations are performed, and
wherein the error report map is generated in the read descriptor, and
wherein the mask map is generated in the read descriptor.

7. The memory system of claim 6 , wherein the bit values of the mask map bits are inverted values of the original error report bits corresponding to the mask map bits.

8. The memory system of claim 6 , the ECC unit further performs ECC operations to respective pages corresponding to the mask map bits according to the bit values of the updated mask map bits and performing third read operations to the respective pages.

9. The memory system of claim 8 , wherein the third read operations are a single read operation.

10. The memory system of claim 6 ,
wherein the first read operations are a multi-read operation, and
wherein the second read operations are a single read operation.

11. A memory system comprising:
a memory device; and
a controller including a processor suitable for performing first read operations to a plurality of pages included in the memory device, a memory suitable for storing an error report map and a mask map, and ECC unit suitable for performing ECC operations,
wherein the processor generates the error report map including original error report bits according to results of the first read operations, and generates the mask map including a first mask map bit and a second mask map bit from the error report map including the original error report bits,
wherein the ECC unit repeats ECC operations to respective pages corresponding to the first mask map bit according to a bit value of the first mask map bit and second read operations to the respective pages, and updating the mask map bits according to results of the second read operations,
wherein the ECC operations and the second read operations are terminated when the updated mask map includes only the second mask map bit, and
wherein the mask map bits are error report bits, which it is possible to update.

12. The memory system of claim 11 , wherein the bit values of the mask map bits are inverted values of the original error report bits corresponding to the mask map bits.

13. The memory system of claim 11 ,
wherein the first read operations are a multi-read operation, and
wherein the second read operations are a single read operation.

14. The memory system of claim 11 , the processor further generates a read descriptor including read result information for read units, to which the first read operations are performed, and
wherein the error report map generated in the read descriptor, and
wherein the mask map generated in the read descriptor.

15. The memory system of claim 14 , wherein the bit values of the mask map bits are inverted values of the original error report bits corresponding to the mask map bits.

16. The memory system of claim 14 ,
wherein the first read operations are a multi-read operation, and
wherein the second read operations are a single read operation.

17. A memory system comprising:
a memory device including a plurality of pages; and
a controller suitable for generating a read descriptor in response to an entered command, reading and outputting read data stored in at least one page in response to the read descriptor, determining whether each per-page data of the read data includes an error, storing indicators for showing whether each per-page data includes the error, re-reading some of the read data on per-page basis, based on the indicators, without generating another read descriptor, and updating the indicators based on an error check result after the re-reading.

Assignees

• Sk Hynix Inc

Inventors

• Chun Dong-Yeob

Classifications

• Y02D10/00

  Energy efficient computing, e.g. low power processors, power management or thermal management · CPC title

• G11C16/0483

  comprising cells having several storage transistors connected in series · CPC title

• G06F11/1008 Primary

  in individual solid state devices (G06F11/1004 takes precedence) · CPC title

• G06F11/1048

  using arrangements adapted for a specific error detection or correction feature · CPC title

• G11C16/26 Primary

  Sensing or reading circuits; Data output circuits · CPC title