Optical modulator

Patent metadata

Field	Value
Publication number	US-10775650-B2
Application number	US-201716327259-A
Country	US
Kind code	B2
Filing date	Aug 25, 2017
Priority date	Aug 29, 2016
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

An optical modulator includes a p-type first semiconductor layer ( 102 ) formed on a clad layer ( 101 ), an insulating layer ( 103 ) formed on the first semiconductor layer ( 102 ), and an n-type second semiconductor layer ( 104 ) formed on the insulating layer ( 103 ). The first semiconductor layer ( 102 ) is made of silicon or silicon-germanium, and the second semiconductor layer ( 104 ) is formed from a III-V compound semiconductor made of three or more materials.

First claim

The invention claimed is:

1. An optical modulator comprising:
a p-type first semiconductor layer made of one of silicon and silicon-germanium formed on a clad layer;
an n-type second semiconductor layer formed from a III-V compound semiconductor made of at least three materials formed on an insulating layer disposed between said first semiconductor layer and said second semiconductor layer;
a first electrode connected to the first semiconductor layer; and
a second electrode connected to the second semiconductor layer,
wherein part of the first semiconductor layer and part of the second semiconductor layer are arranged so as to overlap each other via the insulating layer in a planar view, and form an optical waveguide portion where light to be modulated is guided in a direction parallel to a plane of the clad layer, and
the light waveguide portion satisfies a single mode condition.

2. The optical modulator according to claim 1 , wherein the first electrode is formed on a region of the first semiconductor layer where the optical waveguide portion is not being formed.

3. The optical modulator according to claim 1 , wherein the second semiconductor layer is formed from a plurality of stacked compound semiconductor layers, and among the plurality of compound semiconductor layers, the compound semiconductor layer closer to the insulating layer has a smaller band gap energy.

4. The optical modulator according to claim 1 , wherein the first semiconductor layer is formed from a plurality of stacked semiconductor layers, and among the plurality of semiconductor layers, the semiconductor layer closer to the insulating layer has a smaller bandgap energy.

5. The optical modulator according to claim 2 , wherein the second semiconductor layer is formed from a plurality of stacked compound semiconductor layers, and among the plurality of compound semiconductor layers, the compound semiconductor layer closer to the insulating layer has a smaller band gap energy.

6. The optical modulator according to claim 2 , wherein the first semiconductor layer is formed from a plurality of stacked semiconductor layers, and among the plurality of semiconductor layers, the semiconductor layer closer to the insulating layer has a smaller bandgap energy.

7. The optical modulator according to claim 3 , wherein the first semiconductor layer is formed from a plurality of stacked semiconductor layers, and among the plurality of semiconductor layers, the semiconductor layer closer to the insulating layer has a smaller bandgap energy.

Assignees

• Nippon Telegraph & Telephone

Inventors

• Hiraki Tatsurou
• Matsuo Shinji

Classifications

• G02F1/0152

  using free carrier effects, e.g. plasma effect · CPC title

• G02F2202/105

  single crystal Si · CPC title

• G02F1/025 Primary

  in an optical waveguide structure (G02F1/017, {G02F1/2257} take precedence) · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F2202/102

  In×P and alloy · CPC title