Single-crystal diamond material, single-crystal diamond chip, and perforated tool

Patent metadata

Field	Value
Publication number	US-10774442-B2
Application number	US-201916359638-A
Country	US
Kind code	B2
Filing date	Mar 20, 2019
Priority date	Jul 22, 2015
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

First claim

The invention claimed is:

1. A perforated tool comprising a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.

2. The perforated tool according to claim 1 , wherein
in an X-ray topography image for a crystal growth main surface of the single-crystal diamond die, groups of crystal defect points are gathered, the crystal defect points being a tip point of a crystal defect line reaching the crystal growth main surface, the crystal defect line representing a line in which a crystal defect exists, and
a density of the crystal defect points is more than 2 mm −2 .

3. The perforated tool according to claim 2 , wherein a density of combined dislocation points of the crystal defect points is more than 2 mm −2 , each of the combined dislocation points being a tip point of a combined dislocation reaching the crystal growth main surface, the combined dislocation resulting from a combination of at least either of a plurality of edge dislocations and a plurality of screw dislocations.

4. The perforated tool according to claim 2 , wherein
the single-crystal diamond die includes a plurality of single-crystal diamond layers, and
the crystal defect line is newly generated or branched at an interface between the single-crystal diamond layers, and a density of the crystal defect points of the crystal growth main surface is higher than a density of the crystal defect points of a main surface opposite to the crystal growth main surface.

5. The perforated tool according to claim 2 , wherein in the single-crystal diamond die, a plurality of crystal defect linear gathered regions exist in parallel, and in each of the plurality of crystal defect linear gathered regions, groups of the crystal defect points are gathered to extend in a form of lines.

6. The perforated tool according to claim 1 , wherein in the single-crystal diamond die, the concentration of the non-substitutional nitrogen atoms is not less than 1 ppm.

7. The perforated tool according to claim 1 , wherein in the single-crystal diamond die, a transmittance for light having a wavelength of 400 nm is not more than 60% when the single-crystal diamond die has a thickness of 500 μm.

Assignees

• Sumitomo Electric Industries
• Sumitomo Electric Hardmetal Corp

Inventors

• Nishibayashi Yoshiki
• Tatsumi Natsuo
• Sumiya Hitoshi
• Ueda Akihiko
• Kobayashi Yutaka

Classifications

• B23B2226/31

  Diamond · CPC title

• C30B25/20

  the substrate being of the same materials as the epitaxial layer · CPC title

• C30B29/04 Primary

  Diamond · CPC title

• C30B25/105

  by irradiation or electric discharge · CPC title

• C30B25/186

  being specially pre-treated by, e.g. chemical or physical means · CPC title