Pvt-method and device for producing single crystals in a safe manner with regard to the process
US-2024376633-A1 · Nov 14, 2024 · US
US10774416B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10774416-B2 |
| Application number | US-201615768765-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 14, 2016 |
| Priority date | Oct 16, 2015 |
| Publication date | Sep 15, 2020 |
| Grant date | Sep 15, 2020 |
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The present disclosure relates to a coated substrate with a coating deposited on at least a part of the substrate surface, said coating comprising at least one metal boron carbide layer, characterized in that the metal boron carbide layer is a ternary compound exhibiting a polycrystalline structure formed of a single phase of hafnium, boron and carbon. Further a method for deposition of such a coating is provided.
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The invention claimed is: 1. Coated substrate with a coating deposited on a surface of the substrate, said coating comprising at least one metal boron carbide layer, wherein the metal boron carbide layer is a ternary compound exhibiting a polycrystalline structure formed of a single phase of hafnium, boron and carbon. 2. Coated substrate of claim 1 , wherein the ternary compound has a chemical composition in atomic percentage that can be expressed by the formula Hf u B v C w , wherein u+v+w=100, 0<v<35 at.-%, 0<w<35 at.-% and u<60 at.-%. 3. Coated substrate of claim 1 , wherein the single phase exhibits a cubic solid solution structure or an orthorhombic structure. 4. Coated substrate of claim 2 , wherein the single phase exhibits a cubic solid solution structure or an orthorhombic structure. 5. Method for producing a coated substrate of claim 1 , wherein the method comprises following steps: providing at least one substrate to be coated in a coating chamber, depositing a layer of a ternary compound on at least a portion of the surface of the substrate, wherein said ternary compound layer is produced by using PVD techniques, wherein at least one target comprising a combination of the binary phases HfB 2 and HfC is used as material source for the layer deposition. 6. Method for producing a coated substrate of claim 2 , wherein the method comprises following steps: providing at least one substrate to be coated in a coating chamber, depositing a layer of a ternary compound on at least a portion of the surface of the substrate, wherein said ternary compound layer is produced by using PVD techniques, wherein at least one target comprising a combination of the binary phases HfB 2 and HfC is used as material source for the layer deposition. 7. Method of claim 5 , wherein the at least one target exhibits binary phase regions with particle sizes of less than 1.5 mm. 8. Method of claim 6 , wherein the at least one target exhibits binary phase regions with particle sizes of less than 1.5 mm. 9. Method of claim 5 , wherein the substrate temperature during deposition of the ternary compound layer is not higher than 500° C. 10. Method of claim 6 , wherein the substrate temperature during deposition of the ternary compound layer is not higher than 500° C. 11. Method of claim 7 , wherein a bias voltage is applied at the substrate during deposition of the ternary compound layer, wherein the bias voltage value is between −30 V and −100 V. 12. Method of claim 9 , wherein a bias voltage is applied at the substrate during deposition of the ternary compound layer, wherein the bias voltage value is between −30 V and −100 V. 13. Method of claim 5 , wherein the pressure in the coating chamber during deposition of the ternary compound layer is between 0.3 and 0.4 Pa. 14. Method of claim 7 , wherein the pressure in the coating chamber during deposition of the ternary compound layer is between 0.3 and 0.4 Pa. 15. Method of claim 9 , wherein the pressure in the coating chamber during deposition of the ternary compound layer is between 0.3 and 0.4 Pa. 16. Coated substrate of claim 1 , wherein the substrate is a sliding component. 17. Coated substrate of claim 2 , wherein the substrate is a sliding component. 18. Coated substrate of claim 1 , wherein the substrate is a tool for machining operations or a tool for forming operations. 19. Coated substrate of claim 2 , wherein the substrate is a tool for machining operations or a tool for forming operations.
Borides · CPC title
using substrate bias · CPC title
Carbides · CPC title
Carbides · CPC title
Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title
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