Substrate/oriented apatite-type composite oxide film complex and method for producing same

Patent metadata

Field	Value
Publication number	US-10774012-B2
Application number	US-201615741637-A
Country	US
Kind code	B2
Filing date	Jul 7, 2016
Priority date	Jul 30, 2015
Publication date	Sep 15, 2020
Grant date	Sep 15, 2020

Abstract

Provided is a substrate/oriented apatite-type composite oxide film complex which is suitable as a solid electrolyte for a battery, a sensor, a separation membrane, or the like, and can be produced inexpensively. Proposed is a substrate/oriented apatite-type composite oxide film complex provided with an oriented apatite-type composite oxide film on a substrate, wherein a film thickness of the oriented apatite-type composite oxide film is 10.0 μm or less, a degree of orientation (Lotgering method) thereof is 0.6 or more, and a material of the substrate at a side on which at least the oriented apatite-type composite oxide film is formed is a metal, an alloy, a ceramic, or a composite material thereof.

First claim

The invention claimed is:

1. A substrate/oriented apatite-type composite oxide film complex comprising an oriented apatite-type composite oxide film on a substrate, wherein
the oriented apatite-type composite oxide film comprises a composite oxide represented by a general formula: A 9.33+x [T 6−y M y ]O 26.00+z (where A in the formula represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba; T in the formula represents an element including Si, Ge, or both of them; and M in the formula represents one or two or more elements selected from the group consisting of Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Y, Zr, Ta, Nb, B, Ge, Zn, Sn, W, and Mo.), in which
x in the formula is −1.33 to 1.5,
y in the formula is 0 to 3,
z in the formula is −5.0 to 5.2, and
a ratio (A/T) of a molar number of A to a molar number of T is 1.3 to 3.61,
wherein a degree of orientation (Lotgering method) of the oriented apatite-type composite oxide film is 0.6 or more, and
a material of the substrate at a side on which at least the oriented apatite-type composite oxide film is formed is a metal, an alloy, a ceramic, or a composite material thereof.

2. The substrate/oriented apatite-type composite oxide film complex according to claim 1 , wherein a conductivity of the substrate/oriented apatite-type composite oxide film complex under an air atmosphere at 500° C. is 6.6×10 −6 S/cm or more.

3. The substrate/oriented apatite-type composite oxide film complex according to claim 1 , wherein a residual stress of the oriented apatite-type composite oxide film is −3,500 MPa to 0 MPa.

4. A substrate/oriented apatite-type composite oxide film complex comprising an oriented apatite-type composite oxide film on a substrate, wherein
the oriented apatite-type composite oxide film comprises a composite oxide represented by a general formula: A 9.33+x [T 6−y M y ]O 26.00+z (where A in the formula represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba; T in the formula represents an element including Si, Ge, or both of them; and M in the formula represents one or two or more elements selected from the group consisting of Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Y, Zr, Ta, Nb, B, Ge, Zn, Sn, W, and Mo.), in which
x in the formula is −1.33 to 1.5,
y in the formula is 0 to 3,
z in the formula is −5.0 to 5.2, and
a ratio (A/T) of a molar number of A to a molar number of T is 1.3 to 3.61,
wherein a degree of orientation (Lotgering method) of the oriented apatite-type composite oxide film is 0.6 or more, and
a material of the substrate at a side on which at least the oriented apatite-type composite oxide film is formed is a metal, an alloy, a ceramic, or a composite material thereof, and
a conductivity of the substrate/oriented apatite-type composite oxide film complex under an air atmosphere at 500° C. is 6.6×10 −6 S/cm or more.

5. The substrate/oriented apatite-type composite oxide film complex according to claim 4 , wherein a residual stress of the oriented apatite-type composite oxide film is −3,500 MPa to 0 MPa.

6. A substrate/oriented apatite-type composite oxide film complex comprising an oriented apatite-type composite oxide film on a substrate, wherein
the oriented apatite-type composite oxide film comprises a composite oxide represented by a general formula: A 9.33+x [T 6−y M y ]O 26.00+z (where A in the formula represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, Sr, and Ba; T in the formula represents an element including Si, Ge, or both of them;
and M in the formula represents one or two or more elements selected from the group consisting of Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Y, Zr, Ta, Nb, B, Ge, Zn, Sn, W, and Mo.), in which
x in the formula is −1.33 to 1.5,
y in the formula is 0 to 3,
z in the formula is −5.0 to 5.2, and
a ratio (A/T) of a molar number of A to a molar number of T is 1.3 to 3.61,
wherein
a degree of orientation (Lotgering method) of the oriented apatite-type composite oxide film is 0.6 or more, and
a residual stress of the oriented apatite-type composite oxide film is −3,500 MPa to 0 MPa, and
a material of the substrate at a side on which at least the oriented apatite-type composite oxide film is formed is a metal, an alloy, a ceramic, or a composite material thereof.

7. The substrate/oriented apatite-type composite oxide film complex according to claim 1 , wherein a film thickness of the oriented apatite-type composite oxide film is 1 μm or more and 5 μm or less.

8. A method for producing the substrate/oriented apatite-type composite oxide film complex of claim 1 , the method comprising steps in which an amorphous composite oxide film is formed on a substrate by using a target having a relative density of 80% or more and comprising a composite oxide having the same constitutive element as the amorphous composite oxide film to be formed by a sputtering method, the amorphous composite oxide film is then heated and subjected to a heat treatment at 800° C. or more under an atmosphere in which an oxygen partial pressure is 1.0×10 4 atm or less, and thus the amorphous composite oxide film is crystallized as an apatite structure and oriented,
wherein the oriented apatite-type composite oxide comprises a composite oxide represented by a general formula: A 9.33+x [T 6−y M y ]O 26.00+z (where A in the formula represents one or two or more elements selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Be, Mg, [[Ca, ]]Sr, and Ba; T in the formula represents an element including Si, Ge, or both of them; and M in the formula represents one or two or more elements selected from the group consisting of Mg, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Ga, Y, Zr, Ta, Nb, B, Ge, Zn, Sn, W, and Mo.), in which
x in the formula is −1.33 to 1.5,
y in the formula is 0 to 3,
z in the formula is −5.0 to 5.2, and
a ratio (A/T) of a molar number of A to a molar number of T is 1.3 to 3.61.

9. The method for producing the substrate/oriented apatite-type composite oxide film complex according to claim 8 , wherein a material of the substrate on a side where at least the oriented apatite-type composite oxide film is formed is a non-oriented polycrystalline substance material or an amorphous material.

10. The method for producing the substrate/oriented apatite-type composite oxide film complex according to claim 8 , wherein the amorphous composite oxide film is formed on the substrate by a radio-frequency sputtering method.

11. The method for producing the substrate/oriented apatite-type composite oxide film complex according to claim 8 , wherein a conductivity of the substrate/oriented apatite-type composite oxide film complex under an air atmosphere at 500° C. is 6.6×10 −6 S/cm or more.

12. The method for producing the substrate/oriented apatite-type composite oxide film complex according to claim 8 , wherein a residual stress of the oriented apatite-type composite oxide film is −3,500 MPa to 0 MPa.

Assignees

• Mitsui Mining & Smelting Co

Inventors

• Ide Shingo
• Izutsu Yasuhisa

Classifications

• C23C14/08 Primary

  Oxides (C23C14/10 takes precedence) · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C23C14/5806

  Thermal treatment · CPC title

• C23C14/34

  Sputtering · CPC title

• H01B1/06

  mainly consisting of other non-metallic substances · CPC title