Sensing film and method of making same and electronic device using sensing film
US-2020119256-A1 · Apr 16, 2020 · US
US10770604B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10770604-B2 |
| Application number | US-201815934656-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 23, 2018 |
| Priority date | Mar 24, 2017 |
| Publication date | Sep 8, 2020 |
| Grant date | Sep 8, 2020 |
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The present disclosure relates to a composition that includes a perovskite crystal having a ferroelectric domain aligned substantially parallel to a reference axis. In some embodiments of the present disclosure, the perovskite crystal may include ABX 3 , where A is a first cation, B is a second cation, and X is an anion. In some embodiments of the present disclosure, A may include an alkyl ammonium cation. In some embodiments of the present disclosure, B may include a metal element. In some embodiments of the present disclosure, the metal element may include lead. In some embodiments of the present disclosure, X may include a halogen. In some embodiments of the present disclosure, the perovskite crystal may include methylammonium lead iodide.
Opening claim text (preview).
What is claimed is: 1. A composition comprising: a methylammonium lead iodide perovskite crystal comprising a ferroelectric domain aligned substantially parallel to a reference axis, wherein: the ferroelectric domain has a crystal structure consisting essentially of at least one of a tetragonal phase or an orthorhombic phase, the ferroelectric domain has a width between 2 μm and 40 μm, the ferroelectric domain has a length between one angstrom and 10 mm, and the ferroelectric domain has a d 33 value between 50 pC/N and 60 pC/N. 2. The composition of claim 1 , wherein the ferroelectric domain is characterized by a Rayleigh response having a positive slope. 3. A device comprising a layer comprising a methylammonium lead iodide perovskite crystal comprising a ferroelectric domain aligned substantially parallel to a reference axis, wherein: the ferroelectric domain has a crystal structure consisting essentially of at least one of a tetragonal phase or an orthorhombic phase, the ferroelectric domain has a width between 2 μm and 40 μm, the ferroelectric domain has a length between one angstrom and 10 mm, and the ferroelectric domain has a d 33 value between 50 pC/N and 60 pC/N. 4. The device of claim 3 , wherein: the layer further comprises a first surface and a second surface, the second surface is substantially parallel to the first surface, the first surface and the second surface define a thickness of the layer, and the reference axis is substantially perpendicular to the first surface and the second surface. 5. The device of claim 4 , wherein the thickness is between 1 Å and 10 mm. 6. The device of claim 4 , further comprising: a first electrode comprising a first metal positioned against the first surface; and a second electrode comprising a second metal positioned against the second surface, wherein: the layer is positioned between the first electrode and the second electrode. 7. The device of claim 6 , wherein the first metal and the second metal are the same.
Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title
Photovoltaic [PV] devices · CPC title
Active materials · CPC title
Mono-, di- or tri-methylamine · CPC title
Photovoltaic cells having only PN homojunction potential barriers · CPC title
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